MOS2 THIN FILM AND METHOD FOR MANUFACTURING SAME
    8.
    发明公开
    MOS2 THIN FILM AND METHOD FOR MANUFACTURING SAME 有权
    维多利亚州的圣彼得堡(VERFAHREN ZUR HERSTELLUNG DAVON)的MOS2-DÜNNSCHICHT

    公开(公告)号:EP3037569A4

    公开(公告)日:2017-01-11

    申请号:EP13890707

    申请日:2013-08-13

    发明人: MIN YO-SEP

    摘要: The present disclosure relates to a MoS 2 thin film and a method for manufacturing the same. The present disclosure provides a MoS 2 thin film and a method for manufacturing the same using an atomic layer deposition method. In particular, the MoS 2 thin film is manufactured by an atomic layer deposition method without using a toxic gas such as H 2 S as a sulfur precursor. Thus, the present disclosure is eco-friendly. Furthermore, it is possible to prevent the damage and contamination of manufacturing equipment during the manufacturing process. In addition, it is possible to manufacture the MoS 2 thin film by precisely controlling the thickness of the MoS 2 thin film to the level of an atomic layer.

    摘要翻译: 本发明涉及一种MoS 2薄膜及其制造方法。 本公开提供了一种MoS 2薄膜及其使用原子层沉积方法制造该薄膜的方法。 特别地,MoS 2薄膜是通过原子层沉积方法制造的,而不使用有毒气体如H 2 S作为硫前体。 因此,本公开是环保的。 此外,可以防止在制造过程中制造设备的损坏和污染。 此外,通过将MoS 2薄膜的厚度精确地控制到原子层的水平,可以制造MoS 2薄膜。