摘要:
The present disclosure relates to a MoS 2 thin film and a method for manufacturing the same. The present disclosure provides a MoS 2 thin film and a method for manufacturing the same using an atomic layer deposition method. In particular, the MoS 2 thin film is manufactured by an atomic layer deposition method without using a toxic gas such as H 2 S as a sulfur precursor. Thus, the present disclosure is eco-friendly. Furthermore, it is possible to prevent the damage and contamination of manufacturing equipment during the manufacturing process. In addition, it is possible to manufacture the MoS 2 thin film by precisely controlling the thickness of the MoS 2 thin film to the level of an atomic layer.
摘要:
The invention provides a process for exfoliating a 3-dimenisonal layered material to produce a 2-dimensional material, said process comprising the steps of mixing the layered material in a water-surfactant solution to provide a mixture wherein the material and atomic structural properties of the layered material in the mixture are not altered; applying energy, for example ultrasound, to said mixture; and applying a force, for example centrifugal force, to said mixture. The invention provides a fast, simple and high yielding process for separating 3-dimensional layered materials into individual 2-dimensional layers or flakes, which do not re-aggregate, without utilising hazardous solvents.