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    IMAGE INTENSIFIER SENSOR AS WELL AS AN IMAGING DEVICE COMPRISING SUCH AN IMAGE INTENSIFIER SENSOR
    7.
    发明公开
    IMAGE INTENSIFIER SENSOR AS WELL AS AN IMAGING DEVICE COMPRISING SUCH AN IMAGE INTENSIFIER SENSOR 审中-公开
    图像增强器传感器以及包括这种图像增强器传感器的成像装置

    公开(公告)号：EP3186817A1

    公开(公告)日：2017-07-05

    申请号：EP15771728.1

    申请日：2015-08-13

    申请人： Photonis Netherlands B.V.

    发明人： PLUIS, Björn

    IPC分类号： H01J31/50 ,  H01J31/26 ,  H01J31/49 ,  G02B23/12

    摘要： An image intensifier sensor for acquiring, amplifying and displaying images and including a vacuum envelope, the image intensifier sensor including a photocathode arranged for releasing photoelectrons into the vacuum envelope upon electromagnetic radiation acquired from the images which impinges the photocathode, an anode, spaced apart from and in facing relationship with the photocathode, arranged for receiving the photoelectrons and converting the photoelectrons for displaying the images on the basis thereof, and a power supply unit for providing power to the image intensifier sensor, wherein the image intensifier sensor further includes potting material, wherein the potting material comprises a foam compound.

    摘要翻译： 一种改进的图像增强器传感器以及包括这种改进的图像增强器传感器的成像装置。根据本发明，提供了一种用于采集，放大和显示图像并包括真空包络的图像增强器传感器，所述图像增强器传感器包括： 光电阴极，其被布置用于在从撞击光阴极的图像获得的电磁辐射下将光电子释放到真空外壳中;阳极，其与光阴极隔开并且与光阴极面对关系，被布置为接收光电子并且转换光电子以用于显示图像 基础; 以及用于向图像增强器传感器提供功率的电源单元; 其中所述图像增强器传感器还包括灌封材料，其中所述灌封材料包括泡沫化合物。

    PHOTOCATHODE INCLUDING SILICON SUBSTRATE WITH BORON LAYER
    8.
    发明公开
    PHOTOCATHODE INCLUDING SILICON SUBSTRATE WITH BORON LAYER 有权
    美国麻省理工学院麻省理工学院麻省理工学院

    公开(公告)号：EP2880693A4

    公开(公告)日：2016-06-01

    申请号：EP13825872

    申请日：2013-07-29

    申请人： KLA TENCOR CORP

    发明人： CHUANG YUNG-HO ALEX ,  FIELDEN JOHN

    IPC分类号： H01L31/10 ,  G01N21/95 ,  H01J1/34 ,  H01J31/26 ,  H01J31/50 ,  H01L27/148

    CPC分类号： H01J29/385 ,  G01N21/9501 ,  G02B21/125 ,  H01J1/34 ,  H01J31/26 ,  H01J31/50 ,  H01L27/14643 ,  H01L27/148 ,  H01L27/14806 ,  H01L27/14893

    摘要： A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.

    摘要翻译： 在具有相对的照明​​（顶部）和输出（底部）表面的单晶硅衬底上形成光电阴极。 为了防止硅的氧化，使用最小化氧化和缺陷的工艺将薄（例如1-5nm）的硼层直接设置在输出表面上。 在照明（顶部）表面上形成可选的第二硼层，并且在第二硼层上形成可选的抗反射材料层以增强光子进入硅衬底。 在相对的照明​​（顶部）和输出（底部）表面之间产生可选的外部电位。 光电阴极形成新型电子轰击电荷耦合器件（EBCCD）传感器和检测系统的一部分。