公开(公告)号：EP3120427A4

公开(公告)日：2017-11-01

申请号：EP15765616

申请日：2015-03-19

Applicant: KLA-TENCOR CORP

Inventor： DENG YUJUN ,  CHUANG YUNG-HO ALEX ,  FIELDEN JOHN

IPC: H01S3/10 ,  G01N21/39

CPC classification number: G01N21/9501 ,  G01N21/8806 ,  G02F1/3534 ,  G02F1/39 ,  H01S3/0078 ,  H01S3/0092 ,  H01S3/094015

Abstract: A DUV laser includes an optical bandwidth filtering device, such as etalon, which is disposed outside of the laser oscillator cavity of the fundamental laser, and which directs one range of wavelengths into one portion of a frequency conversion chain and another range of wavelengths into another portion of the frequency conversion train, thereby reducing the bandwidth of the DUV laser output while maintaining high conversion efficiency in the frequency conversion chain.

公开(公告)号：EP3085077A4

公开(公告)日：2017-10-04

申请号：EP14872293

申请日：2014-12-18

Applicant: KLA-TENCOR CORP

Inventor： BROWN DAVID L ,  CHUANG YUNG-HO ,  FIELDEN JOHN

IPC: H04N5/335 ,  G01M11/00 ,  H04N5/357 ,  H04N5/376

CPC classification number: G01N21/8851 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  H01L27/14636 ,  H01L31/02 ,  H04N5/3577 ,  H04N5/3765

Abstract: A method of inspecting a sample at high speed includes directing and focusing radiation onto a sample, and receiving radiation from the sample and directing received radiation to an image sensor. Notably, the method includes driving the image sensor with predetermined signals. The predetermined signals minimize a settling time of an output signal of the image sensor. The predetermined signals are controlled by a phase accumulator, which is used to select look-up values. The driving can further include loading an initial phase value, selecting most significant bits of the phase accumulator, and converting the look-up values to an analog signal. In one embodiment, for each cycle of a phase clock, a phase increment can be added to the phase accumulator. The driving can be performed by a custom waveform generator.

Abstract translation: 高速检查样本的方法包括将辐射引导和聚焦到样本上，并接收来自样本的辐射并将接收到的辐射引导到图像传感器。 值得注意的是，该方法包括用预定信号驱动图像传感器。 预定信号最小化图像传感器的输出信号的建立时间。 预定信号由相位累加器控制，该相位累加器用于选择查找值。 驱动还可以包括加载初始相位值，选择相位累加器的最高有效位，并将查找值转换为模拟信号。 在一个实施例中，对于相位时钟的每个周期，可以将相位增量添加到相位累加器。 驾驶可以由自定义波形发生器执行。

公开(公告)号：EP2973713A4

公开(公告)日：2016-10-05

申请号：EP14779717

申请日：2014-04-01

Applicant: KLA TENCOR CORP

Inventor： CHUANG YUNG-HO ALEX ,  BROWN DAVID L ,  FIELDEN JOHN

IPC: H01L27/146 ,  H01J40/06 ,  H01J43/08 ,  H01L31/103

CPC classification number: H01J40/06 ,  H01J43/08 ,  H01L31/02161 ,  H01L31/103

Abstract: A photomultiplier tube includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. A gap between the semiconductor photocathode and the photodiode may be less than about 1 mm or less than about 500 μm. The semiconductor photocathode may include gallium nitride, e.g. one or more p-doped gallium nitride layers. In other embodiments, the semiconductor photocathode may include silicon. This semiconductor photocathode can further include a pure boron coating on at least one surface.

Abstract translation: 光电倍增管包括半导体光电阴极和光电二极管。 值得注意的是，光电二极管包括p掺杂半导体层，形成在p掺杂半导体层的第一表面上以形成二极管的n掺杂半导体层，以及在p掺杂的第二表面上形成的纯硼层 半导体层。 半导体光电阴极和光电二极管之间的间隙可以小于约1mm或小于约500μm。 半导体光电阴极可以包括例如氮化镓。 一个或多个p掺杂氮化镓层。 在其它实施例中，半导体光电阴极可以包括硅。 该半导体光电阴极还可以在至少一个表面上包括纯硼涂层。

公开(公告)号：EP2742570A4

公开(公告)日：2015-06-03

申请号：EP12816820

申请日：2012-06-28

Applicant: KLA TENCOR CORP

Inventor： DRIBINSKI VLADIMIR ,  CHUANG YUNG-HO ALEX ,  ARMSTRONG JOSEPH J ,  FIELDEN JOHN

IPC: H01S3/098 ,  G01N21/88 ,  G02F1/37 ,  H01S3/109

CPC classification number: H01S5/0092 ,  C03B33/02 ,  C30B1/02 ,  C30B29/10 ,  C30B29/14 ,  C30B29/22 ,  C30B29/30 ,  C30B33/02 ,  G01N21/88 ,  G01N21/8806 ,  G01N21/94 ,  G01N21/9501 ,  G01N2201/06113 ,  G01N2201/0637 ,  G01N2201/068 ,  G02F1/353 ,  G02F1/3551 ,  G02F1/3553 ,  G02F1/37 ,  G02F2001/3505 ,  G02F2001/3507 ,  G02F2001/354 ,  G02F2202/20 ,  H01S3/0092 ,  H01S3/10 ,  H01S3/10038 ,  H01S3/10046 ,  H01S3/11

Abstract: A mode-locked laser system operable at low temperature can include an annealed, frequency-conversion crystal and a housing to maintain an annealed condition of the crystal during standard operation at the low temperature. In one embodiment, the crystal can have an increased length. First beam shaping optics can be configured to focus a beam from a light source to an elliptical cross section at a beam waist located in or proximate to the crystal. A harmonic separation block can divide an output from the crystal into beams of different frequencies separated in space. In one embodiment, the mode-locked laser system can further include second beam shaping optics configured to convert an elliptical cross section of the desired frequency beam into a beam with a desired aspect ratio, such as a circular cross section.

Abstract translation: 可操作以在低温下的锁模激光器系统可包括退火，频率变换晶体和外壳以维持在标准操作在低温下的结晶的退火状态。 在一个中，实施例的晶体可以具有上增加的长度。 第一光束成形光学器件可以被配置为在椭圆形的横截面从一个光源聚焦光束以在位于或接近晶体束腰。 谐波分离块可以划分到从晶体输出到在空间上分离不同频率的光束。 在一个中，实施例的锁模激光系统可包括被配置为转换为所需的频率光束的椭圆形横截面成光束具有所需的纵横比，颜色此外第二光束成形光学器件：例如圆形的横截面。

公开(公告)号：EP3008779A4

公开(公告)日：2017-01-18

申请号：EP14811528

申请日：2014-06-11

Applicant: KLA-TENCOR CORP

Inventor： CHUANG YUNG-HO ,  LU XIAOXU ,  FIELDEN JOHN

IPC: G02F1/35 ,  G02F1/355 ,  H01S3/109

CPC classification number: H01S3/109 ,  G02F1/353 ,  G02F1/3534 ,  G02F1/3558 ,  G02F2001/3507 ,  G02F2001/354 ,  G02F2201/17 ,  G02F2203/15 ,  H01S3/0092

Abstract: A deep ultra-violet (DUV) continuous wave (CW) laser includes a fundamental CW laser configured to generate a fundamental frequency with a corresponding wavelength between about 1 μm and 1.1 μm, a third harmonic generator module including one or more periodically poled non-linear optical (NLO) crystals that generate a third harmonic and an optional second harmonic, and one of a fourth harmonic generator module and a fifth harmonic generator. The fourth harmonic generator module includes a cavity resonant at the fundamental frequency configured to combine the fundamental frequency with the third harmonic to generate a fourth harmonic. The fourth harmonic generator module includes either a cavity resonant at the fundamental frequency for combining the fundamental frequency with the third harmonic to generate a fifth harmonic, or a cavity resonant at the second harmonic frequency for combining the second harmonic and the third harmonic to generate the fifth harmonic.

Abstract translation: 深紫外（DUV）连续波（CW）激光器包括基本CW激光器，其被配置为产生具有在约1μm和1.1μm之间的对应波长的基频;三次谐波发生器模块，包括一个或多个非线性光学 （NLO）晶体，其产生三次谐波和可选的二次谐波，以及五次谐波发生器。 第五谐波发生器模块包括在基频处谐振的腔，并且在第一NLO晶体中组合基频和三次谐波以产生第四谐波，然后在第二NLO晶体中组合四次谐波与未消耗的基频，以产生 五次谐波。 使用一个或多个透镜来分别在第一和第二NLO晶体中聚焦第三和第四谐波。

公开(公告)号：EP2949015A4

公开(公告)日：2016-09-07

申请号：EP14742754

申请日：2014-01-24

Applicant: KLA TENCOR CORP

Inventor： CHUANG YUNG-HO ALEX ,  ARMSTRONG J JOSEPH ,  DRIBINSKI VLADIMIR ,  DENG YUJUN ,  FIELDEN JOHN

IPC: H01S3/00 ,  G01N21/95 ,  G01N21/956 ,  G02F1/35 ,  G02F1/39

CPC classification number: H01S3/1083 ,  G01N21/84 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  G02F1/3534 ,  G02F1/3536 ,  G02F1/39 ,  G02F2001/3507 ,  G02F2201/16 ,  H01S3/0078 ,  H01S3/0092 ,  H01S3/0602 ,  H01S3/067

Abstract: A laser for generating an output wavelength of approximately 193.4 nm includes a fundamental laser, an optical parametric generator, a fourth harmonic generator, and a frequency mixing module. The optical parametric generator, which is coupled to the fundamental laser, can generate a down-converted signal. The fourth harmonic generator, which may be coupled to the optical parametric generator or the fundamental laser, can generate a fourth harmonic. The frequency mixing module, which is coupled to the optical parametric generator and the fourth harmonic generator, can generate a laser output at a frequency equal to a sum of the fourth harmonic and twice a frequency of the down-converted signal.

公开(公告)号：EP2311079A4

公开(公告)日：2013-02-20

申请号：EP09800821

申请日：2009-07-16

Applicant: KLA TENCOR CORP

Inventor： ADEL MICHAEL E ,  POSLAVSKY LEONID ,  FIELDEN JOHN ,  MADSEN JONATHAN MICHAEL ,  PETERS ROBERT

IPC: H01L21/66

CPC classification number: H01L22/12 ,  H01L22/20 ,  H01L22/30 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP2880693A4

公开(公告)日：2016-06-01

申请号：EP13825872

申请日：2013-07-29

Applicant: KLA TENCOR CORP

Inventor： CHUANG YUNG-HO ALEX ,  FIELDEN JOHN

IPC: H01L31/10 ,  G01N21/95 ,  H01J1/34 ,  H01J31/26 ,  H01J31/50 ,  H01L27/148

CPC classification number: H01J29/385 ,  G01N21/9501 ,  G02B21/125 ,  H01J1/34 ,  H01J31/26 ,  H01J31/50 ,  H01L27/14643 ,  H01L27/148 ,  H01L27/14806 ,  H01L27/14893

Abstract: A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.

Abstract translation: 在具有相对的照明​​（顶部）和输出（底部）表面的单晶硅衬底上形成光电阴极。 为了防止硅的氧化，使用最小化氧化和缺陷的工艺将薄（例如1-5nm）的硼层直接设置在输出表面上。 在照明（顶部）表面上形成可选的第二硼层，并且在第二硼层上形成可选的抗反射材料层以增强光子进入硅衬底。 在相对的照明​​（顶部）和输出（底部）表面之间产生可选的外部电位。 光电阴极形成新型电子轰击电荷耦合器件（EBCCD）传感器和检测系统的一部分。

公开(公告)号：EP2837031A4

公开(公告)日：2015-11-18

申请号：EP13775490

申请日：2013-04-08

Applicant: KLA TENCOR CORP

Inventor： CHERN JEHN-HUAR ,  EHSANI ALI R ,  DELGADO GILDARDO ,  BROWN DAVID L ,  CHUANG YUNG-HO ALEX ,  FIELDEN JOHN

IPC: H01L27/146 ,  G01N21/95

CPC classification number: H01L31/0216 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14806

Abstract: An image sensor for short-wavelength light and charged particles includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

公开(公告)号：EP3117495A4

公开(公告)日：2017-11-29

申请号：EP15809376

申请日：2015-06-18

Applicant: KLA-TENCOR CORP

Inventor： CHUANG YUNG-HO ALEX ,  LOIU JUSTIN DIANHUAN ,  LU XIAOXU ,  ARMSTRONG J JOSEPH ,  DENG YUJUN ,  FIELDEN JOHN

IPC: H01S3/00 ,  G03F7/20

CPC classification number: H01S3/10046 ,  G03F7/70025 ,  H01S3/005 ,  H01S3/0071 ,  H01S3/08004 ,  H01S3/08054 ,  H01S3/08059 ,  H01S3/083 ,  H01S3/10 ,  H01S3/10061 ,  H01S2301/20 ,  H01S2301/203 ,  H01S2301/206

Abstract: A repetition rate (pulse) multiplier includes one or more beam splitters and prisms forming one or more ring cavities with different optical path lengths that delay parts of the energy of each pulse. A series of input laser pulses circulate in the ring cavities and part of the energy of each pulse leaves the system after traversing the shorter cavity path, while another part of the energy leaves the system after traversing the longer cavity path, and/or a combination of both cavity paths. By proper choice of the ring cavity optical path length, the repetition rate of an output series of laser pulses can be made to be a multiple of the input repetition rate. The relative energies of the output pulses can be controlled by choosing the transmission and reflection coefficients of the beam splitters. Some embodiments generate a time-averaged output beam profile that is substantially flat in one dimension.