METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING INDUCTOR

    公开(公告)号:JP2001176746A

    公开(公告)日:2001-06-29

    申请号:JP2000311494

    申请日:2000-10-12

    Abstract: PROBLEM TO BE SOLVED: To provide a method by which a lateral high-Q inductor can be formed in a semiconductor device. SOLUTION: This method of manufacturing the semiconductor device, having the inductor which is formed of a plurality of adjacent loops connected in series along the lateral axis of the semiconductor device, with each loop having a pair of bottom and top legs, comprises a step of forming the lower legs on a first surface, a step of depositing a second substrate layer over the first substrate, and a step of forming the pair of side legs for each loop through the second substrate layer. The method also comprises a step of forming upper legs connecting pairs of side legs which extend from adjacent bottom legs.

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