INDUCTOR FOR SEMICONDUCTOR DEVICE

    公开(公告)号:JP2001185420A

    公开(公告)日:2001-07-06

    申请号:JP2000311493

    申请日:2000-10-12

    Abstract: PROBLEM TO BE SOLVED: To provide a method to form a high-Q lateral inductor of which required area within a semiconductor device is reduced. SOLUTION: This inductor has a plurality of loops connected in series in which are formed along a lateral axis of a semiconductor device. Further, each loop has a pair of side legs, an upper leg and a lower leg. The upper leg is in parallel with a first plane and the lower by is in parallel with a second plane with the second plane being in parallel with and apart from the first plane. Furthermore, the first plane and the second plane are in parallel with the lateral axis with the side legs being orthogonal to the first and second planes.

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING INDUCTOR

    公开(公告)号:JP2001176746A

    公开(公告)日:2001-06-29

    申请号:JP2000311494

    申请日:2000-10-12

    Abstract: PROBLEM TO BE SOLVED: To provide a method by which a lateral high-Q inductor can be formed in a semiconductor device. SOLUTION: This method of manufacturing the semiconductor device, having the inductor which is formed of a plurality of adjacent loops connected in series along the lateral axis of the semiconductor device, with each loop having a pair of bottom and top legs, comprises a step of forming the lower legs on a first surface, a step of depositing a second substrate layer over the first substrate, and a step of forming the pair of side legs for each loop through the second substrate layer. The method also comprises a step of forming upper legs connecting pairs of side legs which extend from adjacent bottom legs.

Patent Agency Ranking