INTERFERENCE-TYPE TUNABLE OPTICAL FILTER

    公开(公告)号:JPH06160654A

    公开(公告)日:1994-06-07

    申请号:JP20150393

    申请日:1993-08-13

    Abstract: PURPOSE: To provide an interference-type turnable optical filter selecting the prescribed optical signal of one or plural wavelengths from a wavelength division/multiplex signal. CONSTITUTION: An input signal in the input waveguide 10 of the optical filter is divided into plural waveguide branchings. In the respective branchings, the amplitude of the signal is controlled by an amplitude control element 12 and the phase of the signal by a phase control element 14. Then, the respective signals in the waveguide branchings are connected again. The interference of the divided signals, which is obtained as a result, gives a transmission spectrum which can be controlled in a desired way and which depends on the wavelength.

    96.
    发明专利
    失效

    公开(公告)号:JPH05259581A

    公开(公告)日:1993-10-08

    申请号:JP5850092

    申请日:1992-03-16

    Abstract: PURPOSE:To quickly convert a light pulse train of one wavelength into a light pulse train of the other wavelength, by introducing an oscillation light of a variable wavelength laser part and an external input light into an optically nonlinear amplifier having a structure wherein optical amplifiers and saturable absorbers are alternately arranged in a semiconductor optical waveguide. CONSTITUTION:A waveguide constituted of an amplifier 1G and a saturable absorber 1A is formed on a semiconductor substrate 101. A current flows in the forward direction through the amplifier 1Gk, which almost lineally amplifies an optical signal. The absortion coefficient of the saturable absorber 1Ak is small for large light intensity, and nonlinear I/O characteristics are exhibited. Since sufficient nonlineality can not be obtained by the general amplifier 1Gk and saturable absorber 1Ak, these are arranged in the multistage. By making the final stage amplifier 1G(n+1) long, amplification saturation is caused, so that excellent threshold characteristics can be obtained. The waveform of an inputted signal pulse is regenerated in vertue of high speed response of the elements, and the wavelength is converted to be outputted. That is, the wavelength conversion of a light pulse train is enabled.

    MANUFACTURE OF OPTICAL INTEGRATED CIRCUIT

    公开(公告)号:JPH04268765A

    公开(公告)日:1992-09-24

    申请号:JP2899491

    申请日:1991-02-25

    Applicant: NEC CORP

    Abstract: PURPOSE:To enable an optical integrated circuit where various waveguide type devices are integrated and easily connected together low in loss or custom IC type optical integrated circuits similar in constitution but different in connection to be efficiently manufactured. CONSTITUTION:An optical integrated circuit is composed of ridge type active optical devices formed of a variable wavelength laser 1 and an optical modulator 2 and the ridge type passive optical waveguide of a Y-type optical branching devices 4 which connect the ridge type active optical devices together or the ridge type active optical device and an outgoing light waveguide, where the ridge type active optical device and the ridge of the ridge type passive optical waveguide are formed through a selective crystal growth method.

    OPTICAL AMPLIFIER
    99.
    发明专利

    公开(公告)号:JPH04233783A

    公开(公告)日:1992-08-21

    申请号:JP21322791

    申请日:1991-07-31

    Applicant: PHILIPS NV

    Abstract: PURPOSE: To obtain an optical amplifier insensitive to polarization of incident radiation in which a high amplification factor can be attained with small current by a structure wherein a quantum well QW layer forming a second part, i.e., an active layer part, and other part of a barrier layer are subjected to a compression stress. CONSTITUTION: An active layer 4 sandwiched between isolation cladding layers 2, 5 has twelve quantum wells, for example, wherein the first part of its QW layer is subjected to tensile stress. The active layer 4 also includes six QW layers 4A of semiconductor material each having direct band transition and isolated through a barrier layer 4C of semiconductor material. A second part of QW and barrier layer forming the part of all QW layers 413, i.e., the active layers, are subjected to a compression stress.

    SEMICONDUCTOR LASER AND DRIVING METHOD THEREOF

    公开(公告)号:JPH04188687A

    公开(公告)日:1992-07-07

    申请号:JP31343790

    申请日:1990-11-19

    Applicant: CANON KK

    Inventor: HARA TOSHITAMI

    Abstract: PURPOSE:To enable a semiconductor laser to output laser rays stabilized in wavelength and output level by a method wherein currents injected into current infection regions are modulated synchronous with each other, and the overall length of an optical path is prevented from deviating from a set value by lambda or above. CONSTITUTION:Two or more current injection regions are provided including an active region section A, and provided that a current injection region is composed of a phase adjusting section P and an active section A, as an injection current to the active section A is made to change corresponding to modulating signals, an injection current to the phase adjusting section P is shifted in an opposite direction to synchronize with the injection current to the active section A. By these processes, the overall length of a light path is so set as not to deviate from a set value where an excellent output power can be obtained by lambda or above at modulation. A circuit, which is used for the high speed modulation of an LD to allocate the same current to several sections, is used as a circuit which enables currents injected into the sections A and B to be modulated synchronizing with each other. By this setup, a semiconductor laser can output laser rays stabilized in wavelength and output level even if the laser is directly modulated.

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