公开(公告)号：JP2009032443A

公开(公告)日：2009-02-12

申请号：JP2007193165

申请日：2007-07-25

Applicant: Canon Inc ,  キヤノン株式会社

Inventor： NOMURA KAZUJI ,  FUJIWARA RYOJI ,  NISHIMURA MICHIYO ,  TERAMOTO YOJI ,  MURAKAMI SHUNSUKE

IPC: H01J1/304 ,  H01J31/12

CPC classification number: H01J31/127 ,  H01J1/304 ,  H01J2329/0442 ,  H01J2329/0457

Abstract: PROBLEM TO BE SOLVED: To provide an electron emission film capable of obtaining high emission current density at a low electric field. SOLUTION: In an electron emission element having the electron emission film including metal and carbon, the density of the electron emission film excluding the metal is set up to be 1.2 g/cm 3 or more to 1.8 g/cm 3 , and a content of hydrogen in the electron emission film is set up to be 15 to 40 atom% against the whole atoms organizing the electron emission film. Further, a metal density in a range from the surface of the electron emission film to the depth of 10 nanometers is set up to be 0.1 to 40 atom% against the carbon atomic number included in the electron emission film. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 解决的问题：提供能够在低电场下获得高发射电流密度的电子发射膜。 解决方案：在具有包括金属和碳的电子发射膜的电子发射元件中，除了金属之外的电子发射膜的密度设定为1.2g / cm 3以上，以上至 相对于组织电子发射膜的整个原子，电子发射膜中的氢含量设定为15〜40原子％，为1.8g / cm 3。 此外，从电子发射膜的表面到10纳米的深度的范围内的金属密度相对于包含在电子发射膜中的碳原子数为0.1至40原子％。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008282607A

公开(公告)日：2008-11-20

申请号：JP2007124315

申请日：2007-05-09

Applicant: Canon Inc ,  キヤノン株式会社

Inventor： MURAKAMI SHUNSUKE ,  FUJIWARA RYOJI ,  OGURI NOBUAKI ,  SHIMIZU KOJI

IPC: H01J1/304 ,  H01J9/02 ,  H01J31/12

CPC classification number: H01J1/3048 ,  H01J9/025 ,  H01J31/127

Abstract: PROBLEM TO BE SOLVED: To provide an electron emitting element equipped with an electron emitting film hardly causing a change in characteristics by heat and capable of stable electron emission, an electron source, an image display device, and manufacturing methods thereof. SOLUTION: The electron emitting film of this electron emitting element is a film having a first layer made of a first material, and a plurality of particles made of a second material having electrical resistivity smaller than that of the first material and provided in the first layer. The first material contains oxygen and nitrogen. In details, the first material is oxynitride, oxide doped with nitrogen, or nitride doped with oxygen. The particle diameter of the particle is 1-10 nm. The surface of the electron emitting film is terminated by hydrogen. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种装有电子发射膜的电子发射元件，电子源，图像显示装置及其制造方法几乎不引起热量特性的变化并且能够稳定地发射电子。 解决方案：该电子发射元件的电子发射膜是具有由第一材料制成的第一层和多个由第二材料制成的颗粒的薄膜，该第二材料的电阻率小于第一材料的电阻率，并且设置在 第一层。 第一种材料含有氧和氮。 详细地，第一种材料是氧氮化物，掺杂有氮的氧化物或掺杂氧的氮化物。 颗粒的粒径为1-10nm。 电子发射膜的表面被氢终止。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008218195A

公开(公告)日：2008-09-18

申请号：JP2007053962

申请日：2007-03-05

Applicant: Canon Inc ,  キヤノン株式会社

Inventor： NOMURA KAZUJI ,  FUJIWARA RYOJI ,  NISHIMURA MICHIYO ,  TERAMOTO YOJI ,  MURAKAMI SHUNSUKE

IPC: H01J1/304 ,  H01J31/12

CPC classification number: H01J29/04 ,  H01J1/304 ,  H01J31/127

Abstract: PROBLEM TO BE SOLVED: To provide a technology of making the expansion of an electronic beam discharged from an electron discharging element in the vicinity of first wiring small, suppressing the electronic beam from being radiated to a spacer arranged on the first wiring, and obtaining a high-definition field electron emission type display. SOLUTION: This electron source has an insulating substrate 14, the first wiring 11 arranged on the insulating substrate 14, second wiring 12 that is arranged on the insulating substrate 14 and crosses the first wiring 11, a cathode electrode equipped with an electron discharging member, and a gate electrode installed on the cathode electrode, and equipped with the electron discharging element 15 arranged on the insulating substrate 14 away from a crossing part of the first wiring 11 and the second wiring 12. The first wiring 11 is arranged on the second wiring 12 via the insulating layer 13, and the gate electrode has a plurality of slit-like openings formed in parallel at intervals, and formed so that an extended line of the orthogonal direction of the openings crosses the first wiring 11. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了提供使从第一布线附近的电子放电元件放出的电子束的扩展小的技术，抑制电子束辐射到布置在第一布线上的间隔物， 并获得高清晰度场致电子发射型显示器。 解决方案：该电子源具有绝缘基板14，布置在绝缘基板14上的第一布线11，布置在绝缘基板14上并穿过第一布线11的第二布线12，配备有电子的阴极 放电构件和安装在阴极电极上的栅电极，并且配置有布置在绝缘基板14上的电子放电元件15，远离第一布线11和第二布线12的交叉部分。第一布线11布置在 通过绝缘层13的第二布线12和栅电极具有多个间隔开地形成的狭缝状开口，并且形成为使得开口正交方向的延伸线与第一布线11相交。

版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2006164896A

公开(公告)日：2006-06-22

申请号：JP2004358362

申请日：2004-12-10

Applicant: Canon Inc ,  キヤノン株式会社

Inventor： NISHIMURA MICHIYO ,  TERAMOTO YOJI ,  FUJIWARA RYOJI

IPC: H01J9/02 ,  H01J1/304 ,  H01J29/04 ,  H01J31/12

CPC classification number: H01J9/027 ,  H01J1/316 ,  H01J31/127 ,  H01J2201/3165

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing field emission-type electron-emitting elements capable of highly effectively emitting electrons at a low voltage as well as showing a sufficient on/off property. SOLUTION: A manufacturing method of electron-emitting elements comprises the processes of: preparing a plurality of conductive particles each of which is coated at least on a part of the surface with an insulation layer having a thickness of not more than 10 nm; and forming a dipole layer on the surface of the insulation layer that covers each of the plurality of conductive particles. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种能够以低电压高效地发射电子的场发射型电子发射元件的制造方法以及显示足够的开/关性。 解决方案：电子发射元件的制造方法包括以下工艺：制备多个导电颗粒，每个导电颗粒至少在表面的一部分上涂覆有厚度不大于10nm的绝缘层 ; 以及在所述绝缘层的覆盖所述多个导电颗粒中的每一个的表面上形成偶极子层。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004071536A

公开(公告)日：2004-03-04

申请号：JP2003125030

申请日：2003-04-30

Applicant: Canon Inc ,  キヤノン株式会社

Inventor： SASAKURI DAISUKE ,  FUJIWARA RYOJI ,  ICHIKAWA TAKESHI

IPC: H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12

CPC classification number: H01J9/025 ,  H01J1/3048

Abstract: PROBLEM TO BE SOLVED: To provide an electron-emitting element of a field emission type, achieving a small electron beam diameter, a large electron emission area, highly efficient electron emission at a low voltage, and an easy manufacturing process. SOLUTION: The electron-emitting element comprises a layer 2 electrically connected to a cathode electrode 5, and a plurality of particles 3 mainly made of a material having a resistivity lower than that of a material constituting the layer 2, wherein the density of the particles 3 in the layer 2 is not less than 1×10 14 /cm 3 and not more than 5×10 18 /cm 3 . COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003078147A

公开(公告)日：2003-03-14

申请号：JP2001265073

申请日：2001-08-31

Applicant: Canon Inc ,  キヤノン株式会社

Inventor： FUJIWARA RYOJI ,  WADA TAKATSUGI ,  TERAMOTO YOJI

IPC: H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  H01L29/82 ,  H01L43/08

Abstract: PROBLEM TO BE SOLVED: To obtain a charge injection spin transistor which induces a charge alignment phase transition by other braking except a magnetic field and which uses the transition for a memory device.
SOLUTION: The charge injection spin transistor comprises a perovskite Mn oxide layer 12 having a source electrode 13, a drain electrode 14, and further a structure having a gate electrode 16 on the layer 12 via an insulating layer 15 to induce the charge alignment phase transition. In this transistor, a voltage is applied to the gate electrode 16 to control a carrier (hole) density in the layer 12. Thus, the transition is induced by other braking except the magnetic field, and this can be used for the memory device.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：获得电荷注入自旋晶体管，其通过除了磁场之外的其他制动引起电荷取向相变，并且使用用于存储器件的转变。 解决方案：电荷注入自旋晶体管包括具有源电极13，漏电极14的钙钛矿Mn氧化物层12，并且还具有经由绝缘层15在层12上具有栅电极16的结构，以引起电荷取向相变 。 在该晶体管中，向栅电极16施加电压以控制层12中的载流子（空穴）密度。因此，除了磁场之外，通过其他制动引起转变，这可以用于存储器件。

公开(公告)号：JP2961477B2

公开(公告)日：1999-10-12

申请号：JP35979592

申请日：1992-12-29

Applicant: キヤノン株式会社

Inventor： IWAI HISAMI ,  FUJIWARA RYOJI ,  SAKANO YOSHIKAZU ,  KAWATE SHINICHI ,  MITSUMICHI KAZUHIRO ,  NOMURA ICHIRO

IPC: H01J1/316 ,  H01J1/30 ,  H01J9/02 ,  H01J21/06 ,  H01J29/04 ,  H01J31/12

公开(公告)号：JP2012089258A

公开(公告)日：2012-05-10

申请号：JP2010232626

申请日：2010-10-15

Applicant: Canon Inc ,  キヤノン株式会社

Inventor： OZAKI EIJI ,  MOTOI YASUKO ,  FUJIWARA RYOJI ,  KITAO AKIKO

IPC: H01J1/304 ,  H01J1/316

CPC classification number: H01J29/467 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/4608

Abstract: PROBLEM TO BE SOLVED: To provide an electron emission element having an excellent electron emission characteristic.SOLUTION: An electron emission element includes a cathode and a gate irradiated with electrons emitted via an electric field from the cathode, and the gate includes at least a layer including molybdenum and oxygen at a portion irradiated with the electrons emitted via the electric field from the cathode, and the layer has respective peaks in ranges of 397 eV to 401 eV, 414 eV to 418 eV, 534 eV to 538 eV, and 540 eV to 547 eV, which are observed in the spectrum measurement by an electron energy loss spectroscopic process using a transmission electron microscope.

Abstract translation: 解决的问题：提供具有优异的电子发射特性的电子发射元件。 解决方案：电子发射元件包括阴极和经由来自阴极的电场发射的电子的栅极，并且栅极包括至少一层包括钼和氧的层，所述层在经由电子发射的电子被照射的部分 并且该层具有在397eV至401eV，414eV至418eV，534eV至538eV和540eV至547eV的范围内的各自的峰值，其在通过电子能量的光谱测量中观察到 使用透射电子显微镜的损耗光谱法。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011129484A

公开(公告)日：2011-06-30

申请号：JP2009289728

申请日：2009-12-21

Applicant: Canon Inc ,  キヤノン株式会社

Inventor： MOTOI YASUKO ,  OZAKI EIJI ,  FUJIWARA RYOJI ,  KITAO AKIKO

IPC: H01J1/304 ,  H01J1/316 ,  H01J29/04 ,  H01J31/12

CPC classification number: H01J31/127 ,  H01J1/304 ,  H01J1/316 ,  H01J29/04 ,  H01J2329/0442

Abstract: PROBLEM TO BE SOLVED: To provide an electron-emitting device with superior electron emission characteristics, and to provide an image display apparatus. SOLUTION: The electron-emitting device includes an electron-emitting film containing molybdenum. A spectrum obtained by measuring the surface of the electron-emitting film by X-ray photoelectron spectroscopy has a first peak in the range of 229±0.5 eV and a sub peak in the range of 228.1±0.3 eV. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供具有优异的电子发射特性的电子发射器件，并提供一种图像显示装置。 解决方案：电子发射器件包括含钼的电子发射膜。 通过X射线光电子能谱测定电子发射膜的表面而获得的光谱具有在229±0.5eV范围内的第一峰值和在228.1±0.3eV范围内的次峰值。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2009117203A

公开(公告)日：2009-05-28

申请号：JP2007289651

申请日：2007-11-07

Applicant: Canon Inc ,  キヤノン株式会社

Inventor： FUJIWARA RYOJI ,  NISHIMURA MICHIYO ,  TERAMOTO YOJI ,  NOMURA KAZUJI ,  MURAKAMI SHUNSUKE

IPC: H01J9/02 ,  H01J31/12

CPC classification number: H01J9/02 ,  H01J31/127

Abstract: PROBLEM TO BE SOLVED: To provide: methods for manufacturing an electron emission device having sufficient electron-emission characteristics and simple procedure; an electron source; and an image display apparatus. SOLUTION: The method for manufacturing the electron-emission device includes: a step of preparing a substrate with a carbon film; and a step of locally radiating an energy onto part of the carbon film under an atmosphere of carbon hydride or a hydrogen, or both the carbon hydride and the hydrogen. An electron source has a plurality of electron-emission devices, and each of them is manufactured by the method for the electron-emission device. The image display apparatus has the electron source, and a light-emitting member emitting light by electron irradiation thereto. The electron source is manufactured by the method. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 解决的问题：提供：制造具有足够的电子发射特性和简单程序的电子发射装置的方法; 电子源 和图像显示装置。 解决方案：用于制造电子发射器件的方法包括：制备具有碳膜的衬底的步骤; 以及在碳氢化物或氢气或碳氢化合物和氢气二者的气氛下在部分碳膜上局部辐射能量的步骤。 电子源具有多个电子发射器件，并且通过电子发射器件的方法制造它们。 图像显示装置具有电子源和通过电子照射发光的发光部件。 电子源通过该方法制造。 版权所有（C）2009，JPO＆INPIT