Abstract:
PROBLEM TO BE SOLVED: To provide a method of producing a CZTS compound semiconductor sintered compact, capable of producing a dense CZTS compound semiconductor sintered compact at a firing temperature lower than that in a conventional method.SOLUTION: The method of producing a CZTS compound semiconductor sintered compact includes a step of firing a compact to be sintered containing Cu, Zn, Sn, and S under an environment where a sintering additive is present. The sintering additive contains a germanium compound.
Abstract:
PROBLEM TO BE SOLVED: To provide a manufacturing method of CuSnSparticles that can manufacture CuSnSparticles of uniform composition.SOLUTION: A manufacturing method of CuSnSparticles includes a mixed solution preparing step of preparing a mixed solution by mixing at least a copper ion source, a stannum ion source, a ligand that suppresses an ion-binding reaction, and water, a precursor solution preparing step of preparing a precursor solution of a pH of 2 or higher and 8 or lower by mixing at least the prepared mixed solution and a sulfur ion source, and a sealing step of putting the prepared precursor solution in a container and sealing the container with the precursor solution put therein, and a hydrothermal synthesis reaction step of carrying out a hydrothermal synthesis reaction in the sealed container.
Abstract:
PROBLEM TO BE SOLVED: To provide an electroconductive material having a reduced electrical resistivity and a method for producing the same.SOLUTION: The electroconductive material comprises: carbon nano-tubes each having at least one open end; and iodine added to the carbon nano-tubes. The percentage of the mass of the iodine occupying in the total mass of the carbon nano-tubes and the iodine is 17% or more. The method for producing the electroconductive material comprises: a step of bringing the carbon nano-tubes each having at least one open end into contact with an electrolytic solution containing an iodine source; and a step of using the carbon nano-tubes brought into contact with the electrolytic solution for an action electrode and performing electrolytic oxidation.
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor film capable of manufacturing a ZnMgO film in which an additive amount of Mg to Zn is more than 20 mol% using a liquid phase film formation method.SOLUTION: A method for manufacturing a semiconductor film comprises: a first step of preparing a mixture containing zinc hydroxide and magnesium hydroxide; a second step of attaching the mixture to a film-formed member; and a third step of heating the film-formed member attached with the mixture from 300°C to 400°C in 100/30 minutes.
Abstract:
PROBLEM TO BE SOLVED: To provide a solder joint method for avoiding a stress concentration by a simple method and forming a solder layer with high durability against a cooling cycle. SOLUTION: The soldering method for soldering a second member (a semiconductor element 1) to a first member (a circuit substrate 2) includes: a first process for arranging a solder alloy 4' on the first member, arranging a molding die 20 having a side surface 21 projected toward the solder alloy 4' at the circumference of the solder alloy 4', and arranging the second member on the molding die 20; and a second process for fusing the solder alloy 4' by heating so as to perform soldering. COPYRIGHT: (C)2011,JPO&INPIT