Abstract:
PROBLEM TO BE SOLVED: To provide a negative electrode material, for example, having high Li insertion capacity and improving charge/discharge efficiency of a metal secondary battery.SOLUTION: According to the present invention, a negative electrode material used for a metal secondary battery is provided to solve the problem. The negative electrode material contains TiHand a metal catalyst which is brought into contact with the TiHand capable of accelerating a conversion reaction.
Abstract:
PROBLEM TO BE SOLVED: To provide an anode active material for a metal ion battery, which is capable of reducing overvoltage.SOLUTION: The anode active material for a metal ion battery comprises a powder mixture containing MgHand a carbon material. A ratio (O/Mg atomic ratio) of O to Mg on the surface of the powder mixture is 1.05 or less.
Abstract:
PROBLEM TO BE SOLVED: To provide a dense ZnO based film and a method for producing the dense ZnO based film.SOLUTION: A method for producing a ZnO based film includes: a CBD step of forming a precursor film containing at least Zn, Mg and OH by a CBD method; and a firing step of firing the precursor film having been formed, at a temperature of 280°C or above and 330°C or below. A ZnO based film having an OH group is produced by the production method.
Abstract:
PROBLEM TO BE SOLVED: To provide a production method of a ZnMgO film in which addition of Mg for Zn can be 30 mol% or more.SOLUTION: A production method of a ZnMgO film includes: an adjusting step for adjusting the pH of aqueous ammonia solution in a region between a line α and a line β and adjusting the zinc ion concentration and the magnesium ion concentration in the aqueous ammonia solution, by dissolving a Zn material and an Mg material into an aqueous ammonia solution where the line α defining the precipitation region of Zn(OH)and the region ZnOmay be present is located closer to the low pH side than the line β defining the region magnesium ion may be present and the precipitation region of Mg(OH), in an aqueous solution state diagram where the ordinate represents zinc ion concentration and magnesium ion concentration and the abscissa represents pH; a heating step for raising the temperature of the aqueous ammonia solution to the precipitation temperature of Zn(OH)and Mg(OH)after the adjusting step; and a calcination step for calcining the precipitates after the heating step.
Abstract:
PROBLEM TO BE SOLVED: To provide a negative electrode material offering a high capacity for metal ion insertion.SOLUTION: The negative electrode material contains a hydride containing Li and A, where A represents at least one kind of group 13 element in the periodic table.
Abstract:
PROBLEM TO BE SOLVED: To provide a negative electrode material capable of undergoing a conversion reaction, and offering a high capacity for metal ion insertion.SOLUTION: The negative electrode material contains AlH, and the average grain size of the AlHis in the range where a conversion reaction can occur.
Abstract:
PROBLEM TO BE SOLVED: To provide a metal secondary battery offering high charge-discharge efficiency.SOLUTION: The metal secondary battery comprises a positive electrode active material layer, a negative electrode active material layer, and an electrolyte layer formed between the positive electrode active material layer and the negative electrode active material layer. The negative electrode active material layer contains MgH, and the electrolyte layer is composed of an electrolytic solution containing a metal salt and a solvent which contains a carbonate having a carbon number of 4 or greater.
Abstract:
PROBLEM TO BE SOLVED: To provide a method of producing a CZTS compound semiconductor sintered compact, capable of producing a dense CZTS compound semiconductor sintered compact at a firing temperature lower than that in a conventional method.SOLUTION: The method of producing a CZTS compound semiconductor sintered compact includes a step of firing a compact to be sintered containing Cu, Zn, Sn, and S under an environment where a sintering additive is present. The sintering additive contains zinc chloride.
Abstract:
PROBLEM TO BE SOLVED: To provide a method for producing a CZTS (Copper Zinc Tin Sulfide) compound semiconductor capable of producing a dense CZTS compound semiconductor at a lower firing temperature than hitherto.SOLUTION: A method for producing a CZTS compound semiconductor in which SnS or SnSis included in a sintering aid, has a step for firing a sintered body containing Cu, Zn, Sn and S under an environment in which a sintering aid exists.