公开(公告)号：JP2013082614A

公开(公告)日：2013-05-09

申请号：JP2012224112

申请日：2012-10-09

Applicant: Wacker Chemie Ag ,  ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG

Inventor： SOFIN MIKHAIL

IPC: C01B33/035

CPC classification number: C23C16/24 ,  C01B33/035

Abstract: PROBLEM TO BE SOLVED: To economically produce a polycrystalline rod of silicon of high purity with a low ratio of coarse face.SOLUTION: This device for depositing polycrystalline silicon includes a reactor chamber having a reactor wall, at least 20 of filament rods, and a gas intake port for a reaction gas in the reactor chamber, and further three of another adjacent filament rods, with 150-450 mm of interval, excepting the filament rods in the vicinity of the reactor wall, and 1 to 3 of adjacent intake ports, exist therein in each filament rod. The problem is solved by the device for depositing the polycrystalline silicon.

Abstract translation: 要解决的问题：为了经济地生产具有低比例的粗糙面的高纯度的多晶硅棒。 解决方案：用于沉积多晶硅的装置包括具有反应器壁的反应器室，至少20个长丝棒和用于反应器室中的反应气体的进气口，以及另外三个相邻的长丝杆， 除了反应器壁附近的细丝杆和相邻的进气口的1至3个之外，每个丝杆存在150-450mm间隔。 该问题通过用于沉积多晶硅的装置来解决。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2013014764A

公开(公告)日：2013-01-24

申请号：JP2012146376

申请日：2012-06-29

Applicant: Wacker Chemie Ag ,  ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG

Inventor： STAIGER GERHARD

IPC: C08G77/06

CPC classification number: C08G77/06

Abstract: PROBLEM TO BE SOLVED: To provide a method for producing an organopolysiloxane, which does not have drawbacks described in Background Art in Description.SOLUTION: The method includes: a first step of reacting a mixture composed of tetrachlorosilane, 1.0 to 7.0 mol of a monohydric alcohol and 0 to 2 mol of water; a second step of mixing the reaction mixture obtained in the first step, an organic solvent insoluble in water and having a density of

Abstract translation: 解决的问题：提供一种不具有描述背景技术中描述的缺点的有机聚硅氧烷的制造方法。 解决方案：该方法包括：使由四氯硅烷组成的混合物，1.0至7.0mol的一元醇和0至2mol的水反应的第一步骤; 混合在第一步骤中获得的反应混合物，不溶于水并且密度为<0.95kg / l的有机溶剂和式R的硅烷的第二步骤， SiX，其中在搅拌下向混合物中加入每摩尔Si组分0.2至100摩尔的水，并视情况而定; 和第三步，其中式R“的硅烷或式R”的硅氧烷或硅烷，其中R“为SiOSiR”SB POS =“ POST“> 3 可能再次添加。 在第二步中添加的单官能硅烷的添加量相对于1摩尔四氯硅烷为0.43摩尔〜2摩尔。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2013006175A

公开(公告)日：2013-01-10

申请号：JP2012141406

申请日：2012-06-22

Applicant: Wacker Chemie Ag ,  ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG

Inventor： NORBERT ELLINGER ,  RING ROBERT ,  WIESBAUER JOSEF

IPC: B01J19/24 ,  C01B33/035 ,  H05B3/00 ,  H05B3/03 ,  H05B3/14

CPC classification number: C01B33/035 ,  B01J19/002 ,  B01J19/0073 ,  B01J19/087 ,  B01J2219/00135 ,  B01J2219/00207 ,  B01J2219/00213 ,  B01J2219/00225 ,  B01J2219/00247 ,  B01J2219/00268 ,  B01J2219/0801 ,  B01J2219/0809 ,  B01J2219/0815 ,  B01J2219/0841 ,  B01J2219/0875 ,  H01B17/26 ,  Y02P20/149

Abstract: PROBLEM TO BE SOLVED: To intercept the feed of electric power to a reactor at an early stage by detecting the current leakage or the arc destroying a sealing part, and to maintain the operating time of the reactor until the following decomposition and washing as long as possible even if there are electroconductive contaminants.SOLUTION: The interception of feed of the electric energy is triggered by monitoring the insulation failure of an electric energy network and falling bellow a predetermined insulation resistance, and the switching threshold value intercepting the feed of the electric energy is evaluated in consideration of at least one parameter of the group comprising the geometric shape and materials of the sealing part, a feeding voltage, and the greatest electric energy which is triggered by a greatest possible creep current flowing in the sealing part and which can be input to the sealing part just before the interception.

Abstract translation: 要解决的问题：通过检测电流泄漏或消除密封部件的电弧来拦截早期对电抗器的电力供应，并保持反应器的运行时间，直到下列分解和清洗 即使有导电污染物也尽可能长。

解决方案：通过监测电力网络的绝缘故障和下降预定的绝缘电阻来触发电能馈电的截断，并考虑到截止电能馈电的开关阈值 包括密封部件的几何形状和材料的组中的至少一个参数，馈送电压以及由在密封部分中流动的最大可能的蠕变电流触发并且可以输入到密封部分的最大电能 在拦截之前。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012158515A

公开(公告)日：2012-08-23

申请号：JP2012017182

申请日：2012-01-30

Applicant: Wacker Chemie Ag ,  ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG

Inventor： PAETZOLD UWE ,  HAECKL WALTER ,  JAN PROCHASKA

IPC: C01B33/107

CPC classification number: B01D3/143 ,  C01B33/037 ,  C01B33/046 ,  C01B33/10778

Abstract: PROBLEM TO BE SOLVED: To refine contaminated chlorosilane extremely inexpensively, and to concentrate impurities existing in that case into a maximally small carrying-out amount and to carry it out.SOLUTION: In the refining method by distillation of chlorosilane having processes for preparing a boron-containing mixture comprising chlorosilane containing TCS, DCS and STC, and for refining the mixture comprising chlorosilane by distillation in a plurality of distillation columns, a boron compound having a low boiling point is split from a distillation column by a column top flow containing DCS having a heightened boron concentration, and a boron compound having a high boiling point is split from a distillation column by a column bottom flow having a heightened boron concentration containing a substance having a high boiling point.

Abstract translation: 要解决的问题：非常便宜地精制污染的氯硅烷，并将这种情况下存在的杂质浓缩到最大限度的进出量并进行处理。 解决方案：在通过蒸馏氯硅烷的精炼方法中，其具有制备包含含有TCS，DCS和STC的氯硅烷的含硼混合物的方法，并且通过在多个蒸馏塔中蒸馏精制含氯硅烷的混合物，硼化合物 具有低沸点的蒸馏塔通过含有高硼浓度的DCS的塔顶流从蒸馏塔分离，并且具有高沸点的硼化合物通过具有高硼浓度的塔底流从蒸馏塔分离，所述塔底流含有 具有高沸点的物质。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012117064A

公开(公告)日：2012-06-21

申请号：JP2011260777

申请日：2011-11-29

Applicant: Wacker Chemie Ag ,  ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG

Inventor： GRUNWALD MARTIN ,  MIEDL MATHIAS

IPC: C08L83/14 ,  C08K3/00

CPC classification number: C08L83/04 ,  C08G77/12 ,  C08G77/20 ,  C08L83/00 ,  C08L2666/52 ,  C08L2666/54

Abstract: PROBLEM TO BE SOLVED: To provide an organopolysiloxane material including an inorganic reinforcing filler, a carbon black and a catalyst activatable with heat.SOLUTION: The organopolysiloxane material (O) curable to a vulcanizate having a specific relative permittivity εand having a specific initiating temperature includes (A) a compound having a specific amount of an aliphatic carbon-carbon multiple bond, (B) an organopolysiloxane having a hydrogen atom bound with a specific amount of Si, or (C) an organopolysiloxane having a SiC bound group having a specific amount of an aliphatic carbon-carbon multiple bond and a Si bound hydrogen atom instead of (A) and (B), (D) an inorganic reinforcing filler having a specific amount of a specific BET (Brunauer, Emmett and Teller method) surface area, (E) carbon black having a specific amount of a specific BET surface area and a specific OAN (oil-adsorption number), and (F) a specific catalyst activatable with a specific amount of heat.

Abstract translation: 要解决的问题：提供包括无机增强填料，炭黑和能够热活化的催化剂的有机聚硅氧烷材料。 解决方案：具有特定相对介电常数ε特定起始温度的硫化橡胶可固化的有机聚硅氧烷材料（O）包括（A）具有特定量的化合物 的（B）具有与特定量的Si结合的氢原子的有机聚硅氧烷，或（C）具有特定量的脂族碳 - 碳多重键的具有SiC结合基团的有机聚硅氧烷，和 代替（A）和（B）的Si结合氢原子，（D）具有特定量的特定BET（Brunauer，Emmett和Teller方法）表面积的无机增强填料，（E）具有特定量的炭黑 的特定BET表面积和特定的OAN（吸油量），和（F）可用特定热量活化的特定催化剂。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012111686A

公开(公告)日：2012-06-14

申请号：JP2011255807

申请日：2011-11-24

Applicant: Wacker Chemie Ag ,  ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG

Inventor： TAMME GUDRUN ,  MAUTNER KONRAD ,  GEISSLER WERNER

IPC: C01B33/107

CPC classification number: C07F7/125 ,  C07F7/128

Abstract: PROBLEM TO BE SOLVED: To provide a method for pyrolyzing a high boiling point residue in direct synthesis based on Mueller-Rochow in a silane, using hydrogen chloride.SOLUTION: The high boiling point residue in the direct synthesis based on Mueller-Rochow in a silane is pyrolyzed in a fluidized bed with particles containing silicon dioxide and not containing aluminum, using hydrogen chloride.

Abstract translation: 要解决的问题：提供一种基于Mueller-Rochow在硅烷中使用氯化氢热解直接合成中的高沸点残余物的方法。 解决方案：使用氯化氢，在硅烷中基于Mueller-Rochow的直接合成中的高沸点残余物在含有二氧化硅并且不含有铝的颗粒的流化床中热解。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012092008A

公开(公告)日：2012-05-17

申请号：JP2011231289

申请日：2011-10-21

Applicant: Wacker Chemie Ag ,  ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG

Inventor： FABRY LASZLO ,  THOMAS ALTMANN ,  KRAUS HEINZ

IPC: C01B33/037

CPC classification number: C01B33/035

Abstract: PROBLEM TO BE SOLVED: To avoid high temperature of a thin rod, contamination due to handling of a cleaned thin rod from intermediate storage to deposition, and insufficient cleaning action of the surface of the attached thin rod, and to improve the prior art.SOLUTION: In a method for producing a polycrystalline silicon rod by deposition of silicon on at least one thin rod in a reactor, before the silicon deposition, hydrogen halide is introduced into the reactor containing at least the one thin rod at a temperature of the thin rod of 400-1,000°C, and is irradiated with UV light, and as a result, halogen and hydrogen radicals are produced and the produced volatile halides and hydrides are removed from the reactor.

Abstract translation: 要解决的问题：为了避免细棒的高温，由于处理从中间储存到沉积的清洁的细杆的污染以及附着的薄棒的表面的清洁作用不足，并且改善了先前的 艺术。 解决方案：在用于通过在反应器中的至少一个薄棒上沉积硅来制造多晶硅棒的方法中，在硅沉积之前，将卤化氢引入反应器中，所述反应器至少包含一个细棒，温度为 的400-1000℃的细棒，并用紫外光照射，结果产生卤素和氢自由基，从反应器中除去生成的挥发性卤化物和氢化物。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012012396A

公开(公告)日：2012-01-19

申请号：JP2011147365

申请日：2011-07-01

Applicant: Wacker Chemie Ag ,  ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG

Inventor： WOLFGANG KNIES ,  EIBLMEIER HANS

IPC: C07F7/21

CPC classification number: C07F7/025

Abstract: PROBLEM TO BE SOLVED: To provide a process for synthesizing 1,3,5-triethyl-2,4,6-trihydrido-2,4,6-triethylamino-1,3,5-triaza-2,4,6-trisilacyclohexane.SOLUTION: Trichlorosilane is reacted with ethylamine in a solvent in the process for synthesizing the 1,3,5-triethyl-2,4,6-trihydrido-2,4,6-triethylamino-1,3,5-triaza-2,4,6-trisilacyclohexane.

Abstract translation: 待解决的问题：提供一种合成1,3,5-三乙基-2,4,6-三氢-2,4,6-三乙基氨基-1,3,5-三氮杂-2,4， 6-三硅。 解决方案：在合成1,3,5-三乙基-2,4,6-三氢-2,4,6-三乙基氨基-1,3,5-三氮杂萘的过程中，将三氯硅烷与乙胺在溶剂中反应 -2,4,6-三硅。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011195441A

公开(公告)日：2011-10-06

申请号：JP2011062070

申请日：2011-03-22

Applicant: Wacker Chemie Ag ,  ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG

Inventor： KRAUS HEINZ

IPC: C01B33/02

CPC classification number: C23C16/4418 ,  C01B33/035 ,  C23C16/24 ,  Y10T428/2933

Abstract: PROBLEM TO BE SOLVED: To provide an easy method for manufacturing a large-diameter silicon rod, whereby cracks and chipping off are reduced at bridge- and electrode-side rod ends, thereby increasing crack-free rod length after cutting off the rod ends.SOLUTION: The method for producing the polycrystalline silicon rod by deposition from a gas phase on a core rod comprises: attaching at least one disk above the electrode and/or below the bridge of a rod pair, wherein the at least one disk comprises a material having a lower electrical resistivity than that of polycrystalline silicon under deposition conditions.

Abstract translation: 要解决的问题：为了提供一种用于制造大直径硅棒的简单方法，从而在桥和电极侧的杆端处减小了裂纹和碎裂，从而在切断杆端之后增加了无裂纹杆的长度。 解决方案：通过从芯棒上的气相沉积制造多晶硅棒的方法包括：将至少一个盘附接到电极上方和/或在杆对的桥下方，其中至少一个盘包括材料 在沉积条件下具有比多晶硅低的电阻率。

公开(公告)号：JP2011195439A

公开(公告)日：2011-10-06

申请号：JP2011057972

申请日：2011-03-16

Applicant: Wacker Chemie Ag ,  ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG

Inventor： KRAUS HEINZ ,  SOFIN MIKHAIL

IPC: C04B35/52 ,  C01B33/035

CPC classification number: C01B33/035 ,  H01M4/96

Abstract: PROBLEM TO BE SOLVED: To provide an electrode whose fall probability is remarkably reduced as compared with an electrode having a conventional structure.SOLUTION: In the electrode composed of carbon and having at least two different zones having specific thermal conductivity, an outer zone (A) forms the base of the electrode and carries one or more inner zones, and the innermost zone (B) projects from the zone (A) at the top and has lower specific thermal conductivity than that of the zone (A).

Abstract translation: 要解决的问题：提供一种与具有常规结构的电极相比坠落概率显着降低的电极。解决方案：在由碳组成的具有至少两个具有特定导热性的不同区域的电极中，外部区域（A ）形成电极的基部并且承载一个或多个内部区域，并且最内部区域（B）从顶部的区域（A）突出并且具有比区域（A）更低的比热导率。