公开(公告)号：JP2001144173A

公开(公告)日：2001-05-25

申请号：JP32693099

申请日：1999-11-17

Applicant: DENSO CORP

Inventor： UEDA NOBUTADA ,  MIZUNO SHOJI

IPC: H01L21/76 ,  H01L21/301 ,  H01L21/304 ,  H01L21/762

Abstract: PROBLEM TO BE SOLVED: To simplify the manufacturing process of a semiconductor device which adopts an element isolation structure. SOLUTION: A wafer 1 for forming elements is prepared, trenches 2 of a prescribed depth are formed into the front surface of the wafer 1 and filled with an insulation layer 3 to isolate element forming regions, the wafer 1 is polished by CMP so as to expose the insulation layer 3 on the back side of the wafer 1. Thus the back side of the wafer 1 is polished to make the wafer thin in thickness, so that the insulation layer 3 is disposed to pierce the front and back surfaces of the wafer 1, thereby isolating the elements. Since there is no need for a bonding wafer, used in the prior art for the element isolation, the manufacturing process of the semiconductor device can be simplified.

公开(公告)号：JP2000171517A

公开(公告)日：2000-06-23

申请号：JP34693198

申请日：1998-12-07

Applicant: DENSO CORP

Inventor： UEDA NOBUTADA ,  NASU TADASHI ,  ABE HIROBUMI

IPC: G01R31/26 ,  G01R27/02 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To measure a value of an on-resistance highly accurately while sharing a measurement terminal necessary for measuring the on-resistance of a power MOSFET. SOLUTION: Two measurement terminals 12a and 12b are set to a power MOSFET 11, thereby sharing a terminal for measuring a current and for measuring a voltage. When the power MOSFET 11 is in an off-state, a voltage V1, V2 between a source and a drain when a current running in a forward direction to a parasitic diode 11a formed between the source and drain is 11, I2 is measured. Then, in an on-state of the power MOSFET 11, a voltage V between the source and drain when a drain current is I is measured. An on resistance value RON is obtained by calculations from these measurement results. The on-resistance value RON is measured highly accurately with influences of a contact resistance 13 being eliminated.