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    Conductive particle
    4.
    发明专利
    Conductive particle 有权
    导电颗粒

    公开(公告)号：JP2014096371A

    公开(公告)日：2014-05-22

    申请号：JP2013251635

    申请日：2013-12-05

    Applicant: Hiroshima Industrial Promotion Organization ,  公益財団法人ひろしま産業振興機構 ,  Toda Kogyo Corp ,  戸田工業株式会社 ,  Hayakawa Rubber Co Ltd ,  早川ゴム株式会社

    Inventor： HAYASHI KAZUYUKI ,  OSUGI MINEKO ,  YAMADA KOSAKU ,  KIMURA TETSUYA ,  SHINYA TOSHITAKA

    IPC: H01B5/00 ,  H01R11/01

    Abstract: PROBLEM TO BE SOLVED: To obtain a conductive particle which shows high conductivity and has a conductive layer having adhesion and flexibility capable of following deformation when compressively deformed, and is excellent in reliability.SOLUTION: A conductive particle includes a base resin particle, a plurality of nano-size conductive particles, and a conductive layer. The conductive particle is provided with a conductive network formed by point connection between the plurality of nano-size conductive particles adhering to the surface of the base resin particle, and the conductive layer formed on the nano-size conductive particles by plating. The base resin particle is coated with a surface modifier before adhesion of the nano-size conductive particles, and the nano-size conductive particles adhere to the surface of the base resin particle by a dry method. The conductive particle is suitably used for a conductive spacer or a conductive material such as an anisotropic conductive material.

    Abstract translation: 要解决的问题：为了获得导电性高的导电性粒子，具有在压缩变形时具有能够发生变形的粘合性和挠性的导电性层，并且其可靠性优异。导电性粒子包括基体树脂粒子，多个 的纳米尺寸导电颗粒和导电层。 导电粒子设置有通过在粘附到基础树脂颗粒表面的多个纳米尺寸导电颗粒之间的点连接形成的导电网络和通过电镀在纳米尺寸导电颗粒上形成的导电层。 在粘合纳米尺寸的导电颗粒之前，用表面改性剂涂覆基础树脂颗粒，并且通过干法将纳米尺寸的导电颗粒粘附到基础树脂颗粒的表面上。 导电粒子适合用于导电间隔物或导电材料如各向异性导电材料。

    Method of producing silica zeolite insulation film
    5.
    发明专利
    Method of producing silica zeolite insulation film 有权
    生产二氧化硅沸石绝缘膜的方法

    公开(公告)号：JP2013243274A

    公开(公告)日：2013-12-05

    申请号：JP2012116176

    申请日：2012-05-22

    Applicant: Hiroshima Univ ,  国立大学法人広島大学 ,  Hiroshima Industrial Promotion Organization ,  公益財団法人ひろしま産業振興機構

    Inventor： YOSHIKAWA KIMIMARO ,  SATO TADASHI ,  YAMAMOTO TAKAAKI

    IPC: H01L21/316 ,  H01L21/768

    Abstract: PROBLEM TO BE SOLVED: To provide a method of producing a silica zeolite insulation film ensuring a low relative permittivity and a high mechanical strength, even if calcination is performed under an inert gas atmosphere.SOLUTION: The method of producing a silica zeolite insulation film includes a calcination step for coating a base material with a coating liquid containing a silica zeolite crystal obtained by hydrothermal synthesis and a surfactant, and then performing calcination under an inert gas atmosphere, a hydrophobic treatment step, and an ultraviolet treatment step. A silica zeolite insulation film is produced by performing the ultraviolet treatment step and a second hydrophobic treatment step, a plurality of time, in this order following to the calcination step, and the first hydrophobic treatment step.

    Abstract translation: 要解决的问题：提供确保低相对介电常数和高机械强度的二氧化硅沸石绝缘膜的制造方法，即使在惰性气体气氛下进行煅烧也是如此。解决方案：二氧化硅沸石绝缘膜的制造方法包括 用含有通过水热合成得到的二氧化硅沸石晶体的涂布液和表面活性剂涂覆基材的煅烧步骤，然后在惰性气体气氛下进行煅烧，疏水处理步骤和紫外线处理步骤。 通过在煅烧步骤之后的第一次疏水处理工序中进行多次紫外线处理工序和第二疏水处理工序来制造二氧化硅沸石绝缘膜。

    Precursor composition of low dielectric constant film and method for manufacturing low dielectric constant film using the same
    6.
    发明专利
    Precursor composition of low dielectric constant film and method for manufacturing low dielectric constant film using the same 审中-公开
    低介电常数薄膜的前驱体组合物及其制造低介电常数薄膜的方法

    公开(公告)号：JP2012104616A

    公开(公告)日：2012-05-31

    申请号：JP2010251350

    申请日：2010-11-09

    Applicant: Hiroshima Industrial Promotion Organization ,  Hiroshima Univ ,  公益財団法人ひろしま産業振興機構 ,  国立大学法人広島大学

    Inventor： YOSHIKAWA KIMIMARO ,  KAYABA YASUTAKE

    IPC: H01L21/316 ,  B01J27/10 ,  C08G77/02 ,  C08L71/00 ,  C08L83/02 ,  C09D5/25 ,  C09D7/12 ,  C09D183/02 ,  C09D183/04

    Abstract: PROBLEM TO BE SOLVED: To provide a precursor composition of a low dielectric constant film used for manufacturing a low dielectric constant film that is suppressed in degradation of hydrophobic properties even through being irradiated with UV and is suppressed in increase of a dielectric constant, and a method for manufacturing the low dielectric constant film.SOLUTION: A precursor composition of a low dielectric constant film comprises at least one compound selected from the groups consisting of diethoxymethylsilane, dimethoxymethylsilane, diethoxydisilane, dimethoxydisilane, triethoxysilane, trimethoxysilane, dimethylethoxysilane and dimethylmethoxysilane; at least one substance selected from the groups consisting of compounds represented by Formula: (RO)-Si-X-Si-(RO)(wherein RO is alkoxy and X is an organic crosslinking group selected from the groups consisting of methylene, ethylene, vinylene and 1,4-phenylene), compounds represented by Formula: Si(OR)(wherein R is a univalent organic group), cyclic siloxanes, double cyclic siloxanes and zeolite crystallite; a pyrolytic compound; and an alkoxysilane hydrolytic catalyst.

    Abstract translation: 要解决的问题：为了提供用于制造低介电常数膜的低介电常数膜的前体组合物，即使通过照射UV也能抑制疏水性降低，并且抑制了介电常数的增加 ，以及低介电常数膜的制造方法。 解决方案：低介电常数膜的前体组合物包含至少一种选自二乙氧基甲基硅烷，二甲氧基甲基硅烷，二乙氧基硅烷，二甲氧基硅烷，三乙氧基硅烷，三甲氧基硅烷，二甲基乙氧基硅烷和二甲基甲氧基硅烷的化合物; 选自由式（RO）表示的化合物中的至少一种物质：（S）-Si-X-Si-（RO） 3 （其中RO是烷氧基，X是选自亚甲基，亚乙基，亚乙烯基和1,4-亚苯基的有机交联基团），由式（Si）（OR）表示的化合物

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