公开(公告)号：JP5363413B2

公开(公告)日：2013-12-11

申请号：JP2010108681

申请日：2010-05-10

Applicant: 電気化学工業株式会社

Inventor： 野々垣良三 ,  森下利幸

IPC: H01J1/304 ,  H01J1/15

CPC classification number: H01J1/15 ,  H01J1/304 ,  H01J37/06 ,  H01J2237/06316

Abstract: Provided are an electron source which allows a high-angle current density operation even at a low extraction voltage, and reduces excess current that causes vacuum deterioration; and an electronic device using the electron source. The electron source has a cathode composed of single-crystal tungsten, and a diffusion source provided in the intermediate portion of the cathode. In the cathode, the angle between the axial direction of the cathode and orientation of the cathode is adjusted so that electrons to be emitted from the vicinity of the boundary between (100) surface and (110) surface formed on the tip of the cathode, are emitted substantially parallel to the axis of the cathode. The electronic device is provided with the electron source. The electron source has a cathode composed of single-crystal tungsten, wherein the angle between the axial direction of the cathode and orientation of the cathode is adjusted so that electrons to be emitted from the vicinity of the boundary between (100) surface and (110) surface formed on the tip of the cathode, are emitted substantially parallel to the axis of the cathode; and a diffusion source provided in the intermediate portion of the cathode.