公开(公告)号：JP2006272319A

公开(公告)日：2006-10-12

申请号：JP2006041132

申请日：2006-02-17

Applicant: Air Water Inc ,  エア・ウォーター株式会社

Inventor： ITO SHIGEKI ,  YAMAMOTO KAZUMA ,  KITANO KENZO ,  AIDA SHINJI

IPC: B08B7/00 ,  G02F1/1343

Abstract: PROBLEM TO BE SOLVED: To provide a plasma treatment method capable of suppressing damages on an object to be treated and improving washing ability.
SOLUTION: The plasma treatment method for treating the object to be treated by discharge plasma under a pressure near an atmospheric pressure includes a process of introducing gas containing at least one of helium gas and argon gas between a first electrode and a second electrode arranged facing each other, a process of generating the discharge plasma by applying a high frequency voltage of a frequency ≥1MHz and ≤50MHz between the first electrode and the second electrode, and a process of treating the object to be treated by bringing the discharge plasma into contact with the object to be treated.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供能够抑制待处理物体的损伤并提高洗涤能力的等离子体处理方法。 解决方案：用于在接近大气压的压力下通过放电等离子体处理待处理物体的等离子体处理方法包括在第一电极和第二电极之间引入包含氦气和氩气中的至少一种的气体的过程 通过在第一电极和第二电极之间施加频率≥1MHz和≤50MHz的高频电压来产生放电等离子体的处理，以及通过使放电等离子体处理待处理物体的处理 与被处理物接触。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2005298867A

公开(公告)日：2005-10-27

申请号：JP2004114160

申请日：2004-04-08

Applicant: Air Water Inc ,  Stanley Electric Co Ltd ,  エア・ウォーター株式会社 ,  スタンレー電気株式会社

Inventor： SANO MICHIHIRO ,  HORIO TADASHI ,  YAMAMOTO KAZUMA ,  YOKOYAMA TAKASHI ,  INAGAKI TORU ,  SHIRAHATA TAKAHIRO

IPC: C23C16/40 ,  C23C16/455 ,  H01L33/28 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a ZnO film deposition method capable of promoting growth of a ZnO deposited film without any special remodeling of a film deposition apparatus by introducing a decomposition gas in a treatment space. SOLUTION: In the ZnO film deposition method in which at least raw Zn gas and raw O gas is fed in a treatment space 1, and a ZnO film is deposited on the surface of a work 5 exposed in the treatment space 1 by both raw gases, the ZnO film is deposited while introducing decomposition gas to promote decomposition of at least any one of both raw gases into the treatment space 1, the raw gas is decomposed to realize excellent film deposition and growth, a plasma source or a laser beam source can be omitted, and the structure of the apparatus is simplified, and the equipment cost is reduced. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种通过在处理空间中引入分解气体而能够促进ZnO沉积膜的生长而不对膜沉积设备进行任何特殊改造的ZnO膜沉积方法。 解决方案：在至少在处理空间1中供给原始Zn气体和原料O气体的ZnO膜沉积方法中，并且通过在处理空间1中露出的工件5的表面上沉积ZnO膜 两种原料气体，在引入分解气体的同时沉积ZnO膜，促进两种原料气体中的至少任一种分解成处理空间1，原料气体分解以实现优异的成膜和生长，等离子体源或激光 可以省略光源，简化了装置的结构，降低了设备成本。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005298866A

公开(公告)日：2005-10-27

申请号：JP2004114159

申请日：2004-04-08

Applicant: Air Water Inc ,  Stanley Electric Co Ltd ,  エア・ウォーター株式会社 ,  スタンレー電気株式会社

Inventor： YAMAMOTO KAZUMA ,  SANO MICHIHIRO ,  HORIO TADASHI ,  YOKOYAMA TAKASHI ,  INAGAKI TORU ,  SHIRAHATA TAKAHIRO

IPC: C23C16/40 ,  C23C16/455

Abstract: PROBLEM TO BE SOLVED: To provide a film-forming apparatus for promoting the growth of a ZnO film by introducing a decomposing gas into a treatment space, without requiring a special modification of the facility.
SOLUTION: This film-forming apparatus for forming the ZnO film on the surface of an article 5 to be treated which is exposed to the treatment space 1, by supplying at least O source gas and Zn source gas to the treatment space 1 and using both of the source gases, has decomposing-gas-introducing channels 15 and 27 for introducing the decomposing gas (hydrogen gas) into the treatment space 1, which promotes decomposition of at least one of the source gases. The film-forming apparatus having such a structure decomposes the source gas and forms the adequate film; and at the same time, can simplify the structure of the apparatus itself and reduces a facility cost because it does not need a plasma source or a laser source.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种通过将分解气体引入处理空间来促进ZnO膜的生长的成膜设备，而不需要对设备进行特殊的改进。 解决方案：该成膜装置用于在经处理空间1暴露于待处理物品5的表面上，通过向处理空间1供给至少O源气体和Zn源气体而形成ZnO膜 并且使用这两种源气体，具有用于将分解气体（氢气）引入处理空间1的分解气体导入通道15和27，其促进至少一种源气体的分解。 具有这种结构的成膜装置分解源气体并形成适当的膜; 并且同时可以简化设备本身的结构并且降低设备成本，因为它不需要等离子体源或激光源。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004158499A

公开(公告)日：2004-06-03

申请号：JP2002320128

申请日：2002-11-01

Applicant: Air Water Inc ,  エア・ウォーター株式会社

Inventor： INAGAKI TORU ,  YOKOYAMA TAKASHI ,  YAMAMOTO KAZUMA ,  SHIRAHATA TAKAHIRO

IPC: C23C16/455 ,  H01L21/31

Abstract: PROBLEM TO BE SOLVED: To provide a film forming device which is equipped with a compact gas injection head that is capable of keeping nozzles proper in a gas injecting condition.
SOLUTION: A large number of a nozzle opening 24, nozzle tubes 22 and 23 and the like 24 are used for forming a film on processing objects 5, and are provided to the gas injection head 7 located inside a processing space 1, a plurality of diffusion spaces 11A and 11B where processing gases A and B are separately supplied are provided, partitioning members 13A and 13B for separately isolating the diffusion spaces 11A and 11B from each other are provided, diffusion chamber units 10A and 10B provided with diffusion chambers 12A and 12B composed of the diffusion spaces 11A and 11B are stacked up in a vertical direction, and processing gases are supplied to nozzles corresponding to the processing gases A and B from the diffusion spaces 11A and 11B. By this setup, the processing gases are made to blow against a work 5 as an object of processing through separate gas flow paths, and a film of high quality can be formed.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004100001A

公开(公告)日：2004-04-02

申请号：JP2002265452

申请日：2002-09-11

Applicant: Air Water Inc ,  エア・ウォーター株式会社

Inventor： INAGAKI TORU ,  YAMAMOTO KAZUMA ,  YOKOYAMA TAKASHI ,  SHIRAHATA TAKAHIRO

IPC: C23C16/44 ,  C23C16/455 ,  H01L21/31

CPC classification number: C23C16/45574

Abstract: PROBLEM TO BE SOLVED: To provide a deposition system in which the spouting states of gases from each of nozzles of a gas spouting head is optimized.
SOLUTION: The gas spouting head 7 is provided with many spouting sections 9 respectively for independently spouting the treating gases to a head surface 8 facing a treated object 5 side. The head 7 comprises flow passage members 10A, 11B and 12C respectively having introducing side flow passages 16A, 17A and 18C for each of treating gases and existing so as to correspond to each of the treating gases. The respective flow passage members have laminated structures that the members are separated in a direction substantially along the head surface 8. The members are so constituted that the treating gases are supplied to the nozzles corresponding to the respective treating gases from the nozzle side flow passages 19A, 20B and 21C of the members 10A, 11B and 12C. As a result, each of the treating gases is jetted through the independent flow passages to the treated object 5 and the films having good quality are formed.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种沉积系统，其中优化了来自气体喷射头的每个喷嘴的气体的喷射状态。 解决方案：气体喷射头7分别设有许多喷射部分9，用于独立地将处理气体喷射到面向被处理物体5侧的头部表面8。 头部7包括分别具有用于处理气体的引入侧流动通道16A，17A和18C并且存在以对应于每种处理气体的流动通道构件10A，11B和12C。 各流路构件具有层叠结构，其构件沿着大致沿着头表面8的方向分离。构件被构造成使得处理气体从喷嘴侧流动通道19A供应到与各处理气体相对应的喷嘴 ，20B和21C。 结果，每个处理气体通过独立的流动通道被喷射到被处理物体5，并且形成质量好的膜。 版权所有（C）2004，JPO

公开(公告)号：JP2000281506A

公开(公告)日：2000-10-10

申请号：JP8246399

申请日：1999-03-25

Applicant: AIR WATER INC

Inventor： YOKOYAMA TAKASHI ,  YAMAMOTO KAZUMA ,  AKAE NAMIKO ,  SHIBATA HITOSHI ,  KIYAMA HIROMI ,  TAKAMI KUNIHARU

IPC: A01N25/18 ,  A01M13/00 ,  A01N43/20

Abstract: PROBLEM TO BE SOLVED: To provide a fumigating method by using an entirely new fumigating gas having both safety and excellent microbicidal activities, and further to provide an apparatus for supplying the fumigating gas usable therefor. SOLUTION: This fumigating method for passing argon gas to a liquid propylene oxide sealed in a pressure vessel 2 to generate propylene oxide gas, taking out the generated propylene oxide gas as a mixed gas with the argon gas to the exterior of the pressure vessel 2, and feeding the taken-out gas to the space X to be fumigated, comprises regulating the pressure of the argon gas to be passed to the liquid propylene oxide by a pressure reducing valve 5 installed in the intermediate of an argon gas-feeding pipe 3 to regulate the generated amount of the propylene oxide gas, and to regulate the concentration of the propylene oxide gas in the mixed gas fed to the space X to be fumigated.

公开(公告)号：JP2003225042A

公开(公告)日：2003-08-12

申请号：JP2002028467

申请日：2002-02-05

Applicant: AIR WATER INC ,  KANTO KOGYO KK

Inventor： YAMAMOTO KAZUMA ,  SHIBATA HITOSHI ,  SHIMIZU HIROSHI ,  YOSHIDA TAKAO ,  YAMAUCHI KAZUO ,  WAKAMATSU HIRONORI

IPC: A01M13/00 ,  A01M17/00 ,  A01N25/18 ,  A01N43/20

Abstract: PROBLEM TO BE SOLVED: To provide a fumigation method by which the smoking can be carried out even in a wide site to be fumigated such as cultural facilities by a small installation. SOLUTION: An argon bomb 1 and a PO-filled bomb 8 filled with liquid propylene oxide are prepared. An argon has fed from the argon bomb 1 and the liquid propylene oxide fed from the PO-filled bomb 8 are previously introduced into a gas-liquid mixer 5 and mixed therein, and the gas-liquid mixture obtained by the mixing in the gas-liquid mixer is introduced to a vaporizer 25 to vaporize the mixture. The mixed gas obtained by the vaporization is introduced to a site 31 to be fumigated. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2002029889A

公开(公告)日：2002-01-29

申请号：JP2000214865

申请日：2000-07-14

Applicant: AIR WATER INC ,  MITSUBISHI ELECTRIC CORP

Inventor： YAMAMOTO KAZUMA ,  INAGAKI TORU ,  MARUNO SHIGEMITSU ,  NAKAHATA TAKUMI ,  FURUKAWA TAISUKE ,  TOKUDA YASUKI

IPC: C30B23/08 ,  C30B29/06 ,  H01L21/205

Abstract: PROBLEM TO BE SOLVED: To provide a method of producing a semiconductor crystal thin film, by which the temperature in the surface of a substrate can be kept uniform when a film is formed, and to provide a device which is used in the method. SOLUTION: The device for producing the semiconductor crystal thin film has a vacuum chamber 11 capable of being made high vacuum, a partition plate 13 which has an opening 13a for holding a substrate and separates the space of the vacuum chamber 11 into two spaces P and Q in such a way that the substrate is set on the opening 13a, a heater 15 for supplying radiation heat to the substrate 12 from the rear side, which substrate is held by the partition plate 13, and a manifold 16 for supplying a crystal forming gas to the surface of the substrate 12. A semiconductor crystal is grown by using the device under such a condition that the rear of the substrate 12 is covered by a soaking plate 20 which is brought into contact with the rear of the substrate 12.