中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

47 records (took 0.042 seconds)

    プラズマ処理装置
    1.
    发明专利
    プラズマ処理装置 审中-公开

    公开(公告)号：JP2017091934A

    公开(公告)日：2017-05-25

    申请号：JP2015223581

    申请日：2015-11-16

    Applicant: 株式会社日立ハイテクノロジーズ ,  Hitachi High-Technologies Corp

    Inventor： TAMATOSHI NANAKO ,  TAMURA HITOSHI ,  YASUI HISATERU

    IPC: H05H1/46 ,  H01L21/3065

    Abstract: 【課題】均一な処理を実現できるプラズマ処理装置またはプラズマ処理方法を提供する。【解決手段】プラズマが形成される処理室が内部に配置された真空容器上部を構成して前記プラズマを形成するための電界が透過する誘電体製の窓部材と、この窓部材の上方に配置され前記電界が内側を伝播する第1の導波管と、この第1の導波管と前記窓部材との間に配置され当該第1の導波管からの前記電界が内部に導入されて前記窓部材に供給される第2の導波管とを備え、前記第2の導波管が、前記窓部材の中心部上方に配置された中心側の導波管と当該中心側導波管の外周側でこれを囲んで配置された複数の外周側の導波管と、前記中心側及び外周側の導波管から前記窓部材に導入される前記電界に所定の位相差を形成する手段と、前記導入される前記電界の透過率を異ならせる手段とを備えたプラズマ処理装置。【選択図】図1

    Plasma processing apparatus
    4.
    发明专利
    Plasma processing apparatus 有权
    等离子体加工设备

    公开(公告)号：JP2011176147A

    公开(公告)日：2011-09-08

    申请号：JP2010039386

    申请日：2010-02-24

    Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

    Inventor： TAMURA HITOSHI ,  ISOMURA RYOICHI ,  ISOZAKI SHINICHI ,  UEMURA TAKASHI

    IPC: H01L21/3065 ,  H05H1/46

    Abstract: PROBLEM TO BE SOLVED: To provide a microwave plasma processing apparatus for improving a protruded distribution tendency of plasma density. SOLUTION: A transmission system of the plasma processing apparatus is composed of a circular waveguide, an electromagnetic wave supply mechanism is made of a nearly cylindrical cavity connected to the circular waveguide, and a ridge 301 is provided at the cavity or the ridge 301 and a taper waveguide 401 are used in combination, thus improving a center concentration tendency of microwaves. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种用于改善等离子体密度的突出分布趋势的微波等离子体处理装置。 解决方案：等离子体处理装置的传输系统由圆形波导构成，电磁波供给机构由连接到圆形波导的几乎圆柱形的空腔构成，并且在空腔或脊部设置有脊301 301和锥形波导401组合使用，从而提高微波的中心浓度趋势。 版权所有（C）2011，JPO＆INPIT

    Plasma processing apparatus
    5.
    发明专利
    Plasma processing apparatus 审中-公开
    等离子体加工设备

    公开(公告)号：JP2011077292A

    公开(公告)日：2011-04-14

    申请号：JP2009227142

    申请日：2009-09-30

    Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

    Inventor： TAMURA HITOSHI ,  ISOMURA RYOICHI ,  TETSUKA TSUTOMU

    IPC: H01L21/3065 ,  H01L21/304

    Abstract: PROBLEM TO BE SOLVED: To achieve uniform plasma processing in a large range by optimizing a distribution of microwave regardless of change in a plasma processing condition.
    SOLUTION: A microwave supply means supplies microwave into a vacuum processing chamber to produce plasma. An introduction part of the microwave supply means introducing microwave to the processing chamber includes a circularly polarized wave generator which converts the microwave of linearly polarized wave into the microwave of circularly polarized wave. The circularly polarized wave generator includes a square input-side wave guide tube 301 which operates at a minimum order mode, a regular polygonal or circular output-side wave guide tube 306 which operates at a minimum order mode, and a regular polygonal or circular phase adjusting wave guide tube 303 capable of propagating a plurality of linearly polarized waves of different planes of polarization at the same time. The phase adjusting wave guide tube includes adjusting means 304 and 305 which adjusts the phase or amplitude of one of linearly polarized waves of different polarized wave planes.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：通过优化微波的分布，而不管等离子体处理条件的变化如何，在大范围内实现均匀的等离子体处理。 解决方案：微波提供装置将微波提供给真空处理室以产生等离子体。 向处理室引入微波的微波提供装置的介绍部分包括将线偏振波的微波转换成圆偏振波的微波的圆偏振波发生器。 圆偏振波发生器包括以最小订货模式操作的方形输入侧波导管301，以最小订货模式操作的规则多边形或圆形输出侧波导管306和正多边形或圆形相位 能够同时传播不同极化面的多个线偏振波的调整波导管303。 相位调整波导管包括调节装置304和305，其调节不同极化波平面的线偏振波之一的相位或幅度。 版权所有（C）2011，JPO＆INPIT

    Plasma processing apparatus
    6.
    发明专利
    Plasma processing apparatus 有权
    等离子体加工设备

    公开(公告)号：JP2010141104A

    公开(公告)日：2010-06-24

    申请号：JP2008315631

    申请日：2008-12-11

    Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

    Inventor： SUMIYA MASAHIRO ,  TANAKA MOTOHIRO ,  TAMURA HITOSHI

    IPC: H01L21/3065 ,  H05H1/46

    Abstract: PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which has small variation in CD (Critical Dimension) precision by stabilizing the temperature of an in-apparatus member of the plasma processing apparatus. SOLUTION: A warm air unit 125 is connected to a dielectric window 103 of the plasma processing apparatus and on the basis of a temperature signal generated by measuring the temperature of the dielectric window 103 or a shower plate 102 by a temperature sensor 128, the warm air unit 125 is controlled to perform temperature control over the dielectric window 103 or shower plate 102. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 解决的问题：通过稳定等离子体处理装置的装置内部件的温度，提供CD（临界尺寸）精度变化小的等离子体处理装置。 解决方案：暖空气单元125连接到等离子体处理装置的电介质窗口103，并且基于通过温度传感器128测量电介质窗口103或淋浴板102的温度而产生的温度信号 控制暖风单元125对电介质窗103或喷淋板102进行温度控制。版权所有（C）2010，JPO＆INPIT

    Apparatus and method for processing plasma
    7.
    发明专利
    Apparatus and method for processing plasma 审中-公开
    用于处理等离子体的装置和方法

    公开(公告)号：JP2009206344A

    公开(公告)日：2009-09-10

    申请号：JP2008048082

    申请日：2008-02-28

    Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

    Inventor： TAMURA HITOSHI ,  TANAKA MOTOHIRO ,  NISHIMORI YASUHIRO ,  SAKAGUCHI MASAMICHI

    IPC: H01L21/3065

    Abstract: PROBLEM TO BE SOLVED: To improve the rate of operation in a plasma processing apparatus and maintain appropriate plasma processing capacity for a long period.
    SOLUTION: The plasma processing apparatus includes: a processing chamber which includes a substrate electrode 112 to place a substrate to be processed and a gas supply device 109 to supply a process gas at a specified flow rate; a vacuum discharge means 118 which can control pressure or gas density in the processing chamber and change gas discharging speed; and a mechanism 101 to generate plasma in the processing chamber. Thus, the density of a gas in the processing chamber is controlled uniform by the mechanism for measuring the density thereof based on the measured gas density.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：提高等离子体处理装置中的操作速度并长时间保持适当的等离子体处理能力。 解决方案：等离子体处理装置包括：处理室，其包括用于放置待处理基板的基板电极112和用于以规定流量供给处理气体的气体供给装置109; 真空排出装置118，其可以控制处理室中的压力或气体密度并改变气体排出速度; 以及在处理室中产生等离子体的机构101。 因此，通过基于所测量的气体密度来测量其密度的机构，可以将处理室中的气体的密度均匀地控制。 版权所有（C）2009，JPO＆INPIT

    Plasma etching treatment method
    8.
    发明专利
    Plasma etching treatment method 有权
    等离子体蚀刻处理方法

    公开(公告)号：JP2009016611A

    公开(公告)日：2009-01-22

    申请号：JP2007177531

    申请日：2007-07-05

    Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

    Inventor： TAMURA HITOSHI ,  TANAKA MOTOHIRO

    IPC: H01L21/3065

    Abstract: PROBLEM TO BE SOLVED: To provide a plasma cleaning technique effective in etching a material to be etched containing a material having difficulty in etching.
    SOLUTION: The plasma etching treatment method includes a plasma etching treatment apparatus provided with: a decompression processing chamber 110; a gas supply means 109 for supplying a treatment gas to the decompression processing chamber; a substrate electrode 112 used to place a compound containing oxygen atoms and aluminum and a substrate to be treated containing silicon in the decompression processing chamber and hold them; and a plasma generating means 101 for supplying high-frequency energy to the treatment gas supplied to the decompression processing chamber to generate plasma, wherein the generated plasma is used to apply plasma etching treatment to the substrate. The method includes a step of carrying the substrate subjected to the plasma etching treatment to the outside of the decompression processing chamber, a step of applying first plasma cleaning treatment for supplying a gas containing chlorine to the decompression processing chamber to generate plasma in the decompression processing chamber, and a step of applying second plasma cleaning treatment for supplying a gas containing fluorine to generate plasma in the decompression processing chamber.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种有效地蚀刻含有难以蚀刻的材料的待蚀刻材料的等离子体清洗技术。 解决方案：等离子体蚀刻处理方法包括：具有减压处理室110的等离子体蚀刻处理装置; 用于将处理气体供给到减压处理室的气体供给装置109; 用于将含有氧原子的化合物和含有硅的待处理衬底的衬底电极112放置在减压处理室中并保持它们的衬底电极112; 以及用于向供给到减压处理室的处理气体供给高频能量以产生等离子体的等离子体产生装置101，其中所产生的等离子体用于对基板施加等离子体蚀刻处理。 该方法包括将进行了等离子体蚀刻处理的基板搬送到减压处理室的外部的步骤，在减压处理室中，对减压处理室进行用于向减压处理室供给含氯气体的第一等离子体清洗处理，生成等离子体的工序 以及在减压处理室中施加第二等离子体清洗处理以提供含氟气体以产生等离子体的步骤。 版权所有（C）2009，JPO＆INPIT

    Plasma treatment method and plasma treatment device
    9.
    发明专利
    Plasma treatment method and plasma treatment device 审中-公开
    等离子体处理方法和等离子体处理装置

    公开(公告)号：JP2008172038A

    公开(公告)日：2008-07-24

    申请号：JP2007003972

    申请日：2007-01-12

    Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

    Inventor： TAKAHASHI NUSHITO ,  TAMURA HITOSHI ,  TANAKA MOTOHIRO ,  KIKKAI MOTOHIKO

    IPC: H01L21/3065 ,  H01L21/205

    CPC classification number: H01J37/32477 ,  H01J37/32623 ,  H01J37/32834 ,  H01J37/32862

    Abstract: PROBLEM TO BE SOLVED: To provide a plasma treatment device or a plasma treatment method for restraining the generation of a foreign matter in a sample disposed in a vacuum container. SOLUTION: The plasma treatment device has a treatment chamber disposed in a vacuum container and a sample table disposed in the treatment chamber. A sample put on the sample table is treated by using plasma generated in the treatment chamber. The device has a member which constitutes the inner side wall surface of the treatment chamber and has a dielectric portion in the inner side wall surface, an evacuation means for evacuating the treatment chamber and an electric field supply means for supplying an electric field to the member without generating plasma in the treatment chamber, and the device rapidly changes the magnitude of the electric field supplied from the electric field supply means while evacuating the treatment chamber by the evacuation means. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种等离子体处理装置或等离子体处理方法，用于抑制在设置在真空容器中的样品中异物的产生。 解决方案：等离子体处理装置具有设置在真空容器中的处理室和设置在处理室中的样品台。 通过使用在处理室中产生的等离子体处理样品台上的样品。 该装置具有构成处理室的内侧壁面的构件，在内侧壁面具有电介质部，用于对处理室进行抽真空的排气单元和向该构件供给电场的电场供给单元 而不会在处理室中产生等离子体，并且在通过抽空装置抽空处理室的同时，该装置迅速地改变从电场供给装置供给的电场的大小。 版权所有（C）2008，JPO＆INPIT

    Apparatus and method for plasma treatment
    10.
    发明专利
    Apparatus and method for plasma treatment 有权
    用于血浆处理的装置和方法

    公开(公告)号：JP2007227562A

    公开(公告)日：2007-09-06

    申请号：JP2006045729

    申请日：2006-02-22

    Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

    Inventor： TAMURA HITOSHI ,  YASUI HISATERU ,  WATANABE SEIICHI

    IPC: H01L21/3065 ,  H05H1/46

    CPC classification number: H01L21/6833 ,  H01J37/32706

    Abstract: PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus and a plasma treatment method capable of a precise plasma treatment since voltage control can be done precisely for a substrate to be treated. SOLUTION: The voltage Vw of a substrate to be treated is measured using the substrate to be treated which is attached with a voltage probe and is prepared in advance. From the bias voltage Vesc applied to an electrostatic chuck mechanism 200 and the bias current Iesc in the electrostatic chuck mechanism 200, a capacitive component Cesc servings the impedance is numerically calculated as an electric characteristic of the electrostatic chuck mechanism 200. Then, using the bias voltage Vesc of the substrate to be treated 102 which is to be measured for voltage, the bias current Iesc in the electrostatic chuck mechanism 200, and the capacitive component Cesc which is the impedance acquired in advance; the voltage Vw of the substrate to be treated 102 is estimated based on a predetermined formula. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供能够进行精确等离子体处理的等离子体处理装置和等离子体处理方法，因为可以精确地对待处理的基板进行电压控制。 解决方案：使用附带有电压探针的待处理基板测量待处理的基板的电压Vw，并预先准备。 根据静电吸盘机构200中施加到静电吸盘机构200的偏置电压Vesc和偏置电流Iesc，将静电吸盘机构200的电特性数值计算阻抗的电容分量Cesc作为静电吸引机构200的电特性。然后，使用偏置 要被测量的待处理衬底102的电压Vesc，静电吸盘机构200中的偏置电流Iesc以及预先获得的阻抗的电容分量Cesc; 基于预定公式估计待处理衬底102的电压Vw。 版权所有（C）2007，JPO＆INPIT

Patent Agency Ranking