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    Charged particle beam device
    1.
    发明专利
    Charged particle beam device 有权
    充电颗粒光束装置

    公开(公告)号：JP2014010928A

    公开(公告)日：2014-01-20

    申请号：JP2012144901

    申请日：2012-06-28

    Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

    Inventor： MAKINO HIROSHI ,  KAZUMI HIDEYUKI ,  YAMAZAKI MINORU ,  MIZUHARA YUZURU ,  IZAWA MIKI

    IPC: H01J37/147 ,  H01J37/05 ,  H01J37/153 ,  H01J37/244 ,  H01J37/29

    CPC classification number: H01J37/147 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/24485 ,  H01J2237/2449 ,  H01J2237/2806 ,  H01J2237/281

    Abstract: PROBLEM TO BE SOLVED: To provide a charged particle beam device in which the information based on the charged particles discharged from the bottom of a high aspect structure is made more obvious.SOLUTION: The charged particle beam device includes a first orthogonal electromagnetic field generator which deflects charged particles discharged from a sample, a second orthogonal electromagnetic field generator which further deflects the charged particles deflected by the first orthogonal electromagnetic field generator, an aperture formation member having a passage aperture of a charged particle beam, and a third orthogonal electromagnetic field generator for deflecting the charged particles passed through the aperture formation member.

    Abstract translation: 要解决的问题：提供一种带电粒子束装置，其中基于从高方面结构的底部排出的带电粒子的信息变得更加明显。解决方案：带电粒子束装置包括第一正交电磁场发生器， 偏转从样品排出的带电粒子，第二正交电磁场发生器，其进一步偏转由第一正交电磁场发生器偏转的带电粒子，具有带电粒子束的通过孔的孔形成构件和第三正交电磁场发生器 用于偏转通过孔形成构件的带电粒子。

    Charged particle beam device
    2.
    发明专利
    Charged particle beam device 有权
    充电颗粒光束装置

    公开(公告)号：JP2014022040A

    公开(公告)日：2014-02-03

    申请号：JP2012156074

    申请日：2012-07-12

    Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

    Inventor： IZAWA MIKI ,  YAMAZAKI MINORU ,  MIZUHARA YUZURU ,  MAKINO HIROSHI ,  KAZUMI HIDEYUKI

    IPC: H01J37/28 ,  H01J37/05 ,  H01J37/147 ,  H01J37/244

    CPC classification number: G01N23/2258 ,  G01B2210/56 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/1508 ,  H01J2237/2448 ,  H01J2237/281 ,  H01J2237/2816

    Abstract: PROBLEM TO BE SOLVED: To provide a charged particle beam device in which the edge information at the bottom of a high aspect structure, such as a deep hole or a deep groove, is manifested.SOLUTION: The charged particle beam device includes an aperture forming member having an aperture for passing a charged particle beam emitted from a charged particle beam source, and a detector for detecting charged particles brought about by collision of charged particles passed through the aperture and collided against other member. The charged particle beam device is further provided with a deflector for deflecting the charged particles emitted from a sample, and a controller for controlling the deflector. The controller controls the deflector so the trajectory of the charged particles emitted from the sample is moved, and performs length measurement based on the detection signals before and after deflection by the deflector.

    Abstract translation: 要解决的问题：提供一种带电粒子束装置，其中表现出诸如深孔或深槽的高方面结构底部的边缘信息。解决方案：带电粒子束装置包括孔形成 具有用于使从带电粒子束源发射的带电粒子束通过的孔的构件，以及检测器，用于检测通过穿过该孔的带电粒子碰撞而引起的带电粒子，并碰撞其他构件。 带电粒子束装置还设置有用于偏转从样品发射的带电粒子的偏转器和用于控制偏转器的控制器。 控制器控制偏转器，使得从样品发射的带电粒子的轨迹移动，并且基于偏转器偏转前后的检测信号进行长度测量。

    Method and apparatus for inspecting semiconductor pattern
    4.
    发明专利
    Method and apparatus for inspecting semiconductor pattern 有权
    用于检查半导体图案的方法和装置

    公开(公告)号：JP2009253100A

    公开(公告)日：2009-10-29

    申请号：JP2008100676

    申请日：2008-04-08

    Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

    Inventor： IZAWA MIKI ,  KOJIMA TAKEKI ,  MAEDA TATSUYA

    IPC: H01L21/66 ,  G01B15/04

    Abstract: PROBLEM TO BE SOLVED: To provide a method having functions for automatically performing operations of right and wrong diagnosis and optimization of a recipe in an inspection of a semiconductor pattern.
    SOLUTION: A SEM image with low magnification is acquired for an area including a measurement point set on the semiconductor pattern. Next, whether a pattern for addressing, a pattern for automatic focusing, and a pattern for auto stigma preliminarily registered as the recipe satisfy predetermined recommendation conditions is judged. When it is judged that the patterns do not satisfy the predetermined recommendation conditions, the optimal pattern for addressing, the optimal pattern for automatic focusing, and the optimal pattern for auto stigma are selected from the SEM image.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种具有在半导体图案的检查中自动执行正确和错误诊断和配方优化的操作的功能的方法。 解决方案：对于包括设置在半导体图案上的测量点的区域，获取低倍率的SEM图像。 接下来，判断用于寻址的图案，自动对焦的图案和预先登记为食谱的自动标点图案是否满足预定的推荐条件。 当判断图案不满足预定的推荐条件时，从SEM图像中选择寻址的最佳图案，用于自动聚焦的最佳图案和用于自动柱头的最佳图案。 版权所有（C）2010，JPO＆INPIT

    Image processing apparatus, pattern generating method using directed self-assembly lithography technology, and computer program
    6.
    发明专利
    Image processing apparatus, pattern generating method using directed self-assembly lithography technology, and computer program 有权
    图像处理设备，使用方向自组织图形技术的图形生成方法和计算机程序

    公开(公告)号：JP2014099568A

    公开(公告)日：2014-05-29

    申请号：JP2012251770

    申请日：2012-11-16

    Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

    Inventor： SUTANI TAKUJI ,  IZAWA MIKI ,  KOSHIHARA SHUNSUKE ,  SUGIYAMA AKIYUKI

    IPC: H01L21/027 ,  G01B15/04

    CPC classification number: G03F7/70491 ,  B82Y40/00 ,  H01L21/0337

    Abstract: PROBLEM TO BE SOLVED: To provide an image processing apparatus that achieves image processing suitable for addressing on a sample generated by patterning using a directed self-assembly (DSA) technology, a pattern generation method using a directed self-assembly lithography technology, and a computer program.SOLUTION: There are provided an image processing apparatus that creates a template for addressing on the basis of guide pattern data used for patterning using DSA, a pattern generation method using a directed self-assembly lithography technology, and a computer program, to measure a pattern formed through a patterning process using DSA, or to create an addressing pattern suitable for alignment of field of view when inspection is performed.

    Abstract translation: 要解决的问题：提供一种图像处理装置，其实现适合于使用定向自组装（DSA）技术的图案化产生的样本上的寻址的图像处理，使用定向自组装光刻技术的图案生成方法，以及 计算机程序。提供了一种图像处理装置，其基于使用DSA进行图案化的引导图案数据，使用定向自组装光刻技术的图案生成方法和计算机程序，创建用于寻址的模板， 测量通过使用DSA的图案化处理形成的图案，或者当执行检查时创建适合于视场对准的寻址图案。

    Method for measuring pattern shape and apparatus therefor
    7.
    发明专利
    Method for measuring pattern shape and apparatus therefor 审中-公开
    用于测量图案形状的方法及其装置

    公开(公告)号：JP2012173028A

    公开(公告)日：2012-09-10

    申请号：JP2011032885

    申请日：2011-02-18

    Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

    Inventor： TANAKA MAKI ,  IZAWA MIKI ,  SHISHIDO CHIE

    IPC: G01B15/00 ,  G01B15/04

    Abstract: PROBLEM TO BE SOLVED: To provide a method for measuring a pattern by use of a SEM image photographed from above the pattern, by which even when changes in pattern height such as reduction in a resist film thickness occur, the cross-sectional shape of the pattern can be accurately measured.SOLUTION: The method for measuring a pattern shape formed on a sample is carried out using a charged particle beam device in the following manner. A sample is irradiated with a converged charged particle beam to scan to generate from the sample secondary charged particles, which are detected to acquire a charged particle beam image of the pattern formed on the sample surface; information about height of the pattern is acquired from the information of the charged particle beam image of the pattern, which is acquired based on a preliminarily acquired relationship between pattern height and information of the charged particle beam image of the pattern; and dimensions of the pattern are calculated from the information of the charged particle beam image of the pattern using the acquired information about height of the pattern.

    Abstract translation: 要解决的问题：提供一种通过使用从图案上方拍摄的SEM图像来测量图案的方法，通过该方法，即使发生诸如抗蚀剂膜厚度的降低的图案高度的变化，横截面 可以精确测量图案的形状。 解决方案：用于测量在样品上形成的图案形状的方法使用带电粒子束装置以下列方式进行。 用收敛的带电粒子束照射样品以从样品二次带电粒子产生，其被检测以获取形成在样品表面上的图案的带电粒子束图像; 从图案的带电粒子束图像的信息中获取关于图案的高度的信息，其基于预先获取的图案高度与图案的带电粒子束图像的信息之间的关系而获取; 并且使用获取的关于图案的高度的信息，从图案的带电粒子束图像的信息计算图案的尺寸。 版权所有（C）2012，JPO＆INPIT

    Pattern measuring apparatus
    8.
    发明专利
    Pattern measuring apparatus 有权
    图案测量装置

    公开(公告)号：JP2010249587A

    公开(公告)日：2010-11-04

    申请号：JP2009097572

    申请日：2009-04-14

    Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

    Inventor： MOCHIZUKI YUZURU ,  TANAKA MAKI ,  IZAWA MIKI ,  YAMAGUCHI SATOSHI

    IPC: G01B15/04 ,  H01L21/027

    CPC classification number: G01B15/04 ,  G01B15/00 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: PROBLEM TO BE SOLVED: To attain specifying the type of a gap formed in a manufacturing process, having a plurality of exposure processes, at a high throughput. SOLUTION: A pattern measuring apparatus and a computer program are proposed for extracting the feature quantities regarding one end of a pattern where a plurality of patterns is arranged, and another feature quantity regarding the other end of the pattern from a signal detected, based on scanning of charged particle beams, and for determining the types of spaces among the plurality of patterns based on the comparison of the two types of feature quantity. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：为了在高生产率下实现具有多个曝光处理的制造过程中形成的间隙的类型。 解决方案：提出了一种图案测量装置和计算机程序，用于提取关于布置多个图案的图案的一端的特征量，以及关于来自所检测的信号的图案的另一端的另一特征量， 基于对带电粒子束的扫描，并且基于两种类型的特征量的比较来确定多个图案中的空间的类型。 版权所有（C）2011，JPO＆INPIT

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