公开(公告)号：JP2010118377A

公开(公告)日：2010-05-27

申请号：JP2008288488

申请日：2008-11-11

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： BABA ATSUSHI ,  KONNO TOMOHISA ,  KUBOTA KIYONOBU ,  TAI YUGO ,  NISHIGUCHI NAOKI

IPC: H01L21/304 ,  B24B37/00 ,  C09K3/14

Abstract: PROBLEM TO BE SOLVED: To provide an aqueous dispersing element for chemical mechanical polishing capable of performing polishing without any copper remainder (copper residue) and corrosion while striking a balance between high polishing speed and highly flat characteristics without causing any defects in a copper film and an insulation film, to provide a method of preparing the dispersing element, and to provide a method of performing chemical mechanical polishing of a semiconductor device. SOLUTION: The aqueous dispersing element for chemical mechanical polishing includes an amino acid (A), a triazole dielectric (B), an imidazole dielectric (C), an oxidant (D), and an abrasive grain (E), where the ratio (W B /W C ) of the content (W B ) [mass%] of the constituent of (B) to the content (W C ) [mass%] of the constituent of (C) ranges from 0.5 to 30. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于化学机械抛光的水分散元件，其能够在没有任何铜残余物（铜残留物）和腐蚀的同时进行抛光，同时在高抛光速度和高度平坦的特性之间达到平衡，而不会引起任何缺陷 铜膜和绝缘膜，以提供制备分散元件的方法，并提供对半导体器件进行化学机械抛光的方法。 解决方案：用于化学机械抛光的水性分散元件包括氨基酸（A），三唑电介质（B），咪唑电介质（C），氧化剂（D）和磨料颗粒（E），其中 （B）成分的含量（W B ）[质量％]与（B）的比例（W B / W SB> （C）成分的含量（W C ）[质量％]为0.5〜30。（C）2010，JPO＆INPIT

公开(公告)号：JP2013041992A

公开(公告)日：2013-02-28

申请号：JP2011177933

申请日：2011-08-16

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SATO KEIICHI ,  KUBOTA KIYONOBU ,  NODA MASAHIRO ,  KONNO TOMOHISA

IPC: H01L21/304 ,  B24B37/00 ,  C09K3/14

Abstract: PROBLEM TO BE SOLVED: To provide an aqueous dispersion for chemical mechanical polishing capable of sufficiently increasing a polishing speed ratio of a silicon nitride film relative to a silicon oxide film or a polysilicon film without needing high polishing pressure and good in storage stability, and a chemical mechanical polishing method using the aqueous dispersion for chemical mechanical polishing.SOLUTION: An aqueous dispersion for chemical mechanical polishing according to the present invention contains (A) a silica particle having at least one functional group selected from the group consisting of a sulfo group and a salt thereof, and (B) a nonionic surfactant having a triple bond, and has a pH of 2 or more and 7 or less.

Abstract translation: 要解决的问题：提供一种用于化学机械抛光的水分散体，其能够充分提高氮化硅膜相对于氧化硅膜或多晶硅膜的抛光速度比，而不需要高抛光压力和良好的储存稳定性 以及使用化学机械研磨用水性分散体的化学机械研磨方法。 解决方案：根据本发明的用于化学机械抛光的水分散体包含（A）具有至少一个选自磺基和其盐的官能团的二氧化硅颗粒，和（B）非离子表面活性剂 具有三键的表面活性剂，并且具有2以上且7以下的pH。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2010251492A

公开(公告)日：2010-11-04

申请号：JP2009098662

申请日：2009-04-15

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NISHIGUCHI NAOKI ,  KONNO TOMOHISA ,  BABA ATSUSHI ,  KUBOTA KIYONOBU

IPC: H01L21/304 ,  B24B37/00 ,  C09K3/14

Abstract: PROBLEM TO BE SOLVED: To provide an aqueous dispersant for chemical mechanical polishing, a method for preparing a relevant dispersant, and a chemical mechanical polishing method of a semiconductor device, which performs polishing without causing defects in a copper film and in an insulating film, while enabling high polishing speed and high planarization property to be compatible without copper remainder (copper residue) and corrosion. SOLUTION: The aqueous dispersant is used for chemical mechanical polishing for polishing a film composed of copper or copper alloy containing (A) amino acids, (B) compounds having a triazole frame, (C) compounds having a pyridine frame, (D) oxidants, and (E) abrasive grains, wherein the mass ratio (W C /W B ) of the content (W B ) of the component (B) and the content (W C ) of the component (C) is 30-100, and the pH is 6-8. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供用于化学机械抛光的水分散剂，制备相关分散剂的方法和半导体器件的化学机械抛光方法，其进行抛光而不引起铜膜中的缺陷，并且 绝缘膜，同时可实现高抛光速度和高平坦化性能，而不会有铜残留物（铜残留物）和腐蚀。 解决方案：水分散剂用于抛光由含有（A）氨基酸的铜或铜合金构成的膜的化学机械抛光，（B）具有三唑骨架的化合物，（C）具有吡啶骨架的化合物（ D）氧化剂和（E）磨粒，其中含量（W B ）的质量比（W C / W SB < 的组分（B）和组分（C）的含量（W C ）为30-100，pH为6-8。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010118378A

公开(公告)日：2010-05-27

申请号：JP2008288489

申请日：2008-11-11

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： BABA ATSUSHI ,  KONNO TOMOHISA ,  KUBOTA KIYONOBU ,  TAI YUGO ,  NISHIGUCHI NAOKI

IPC: H01L21/304 ,  B24B37/00 ,  C09K3/14

Abstract: PROBLEM TO BE SOLVED: To provide an aqueous dispersing element for chemical mechanical polishing capable of performing polishing without any copper remainder (copper residue) and corrosion while striking a balance between high polishing speed and highly flat characteristics without causing any defects in a copper film and an insulation film, to provide a method of preparing the dispersing element, and to provide a method of performing chemical mechanical polishing of a semiconductor device. SOLUTION: The aqueous dispersing element for chemical mechanical polishing includes an amino acid (A), an imidazole dielectric (B), an oxidant (C), and an abrasive grain (D), where the ratio (W A /W B ) of the content (W A ) [mass%] of the constituent of (A) to the content (W B ) [mass%] of the constituent of (B) ranges from 1 to 100. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于化学机械抛光的水分散元件，其能够在没有任何铜残余物（铜残留物）和腐蚀的同时进行抛光，同时在高抛光速度和高度平坦的特性之间达到平衡，而不会引起任何缺陷 铜膜和绝缘膜，以提供制备分散元件的方法，并提供对半导体器件进行化学机械抛光的方法。 解决方案：用于化学机械抛光的水性分散元件包括氨基酸（A），咪唑电介质（B），氧化剂（C）和磨料颗粒（D），其中比例（W （A）成分的含量（W A ）[质量％]与含量（W B）的含量（W B （B）组分的[质量％]为1〜100份。（C）2010，JPO＆INPIT

公开(公告)号：JP2005302974A

公开(公告)日：2005-10-27

申请号：JP2004116308

申请日：2004-04-12

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： KONNO TOMOHISA ,  SHIDA HIROTAKA ,  KUBOTA KIYONOBU ,  HATTORI MASAYUKI ,  KAWAHASHI NOBUO

IPC: B24B37/00 ,  C09K3/14 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide an aqueous dispersant for chemical mechanical polishing which can efficiently remove a cap layer by polishing, and at the same time, with which a chemical mechanical polishing process that is reduced in damages given to the material of an underlying insulating layer having a low dielectric constant can be performed, and to provide a method for chemical mechanical polishing which uses the aqueous dispersant. SOLUTION: The aqueous dispersant for chemical mechanical polishing contains (A1) first fumed silica, having a specific surface area of ≥10 m 2 /g and 2 /g and a mean secondary particle diameter of 170-250 nm and (A2) second fumed silica, having a specific surface area of ≥160 m 2 /g and a mean secondary particle diameter of ≥50 nm and COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于化学机械抛光的水性分散剂，其可以通过抛光有效地除去盖层，同时通过其减少对材料的损伤的化学机械抛光工艺 可以进行具有低介电常数的底层绝缘层，并提供一种使用该水分散剂的化学机械抛光方法。 解决方案：用于化学机械抛光的水分散剂含有（A1）第一热解法二氧化硅，比表面积≥10m 2 / g和<160m 2 / g，平均二次粒径为170-250nm，（A2）第二热解法二氧化硅的比表面积≥160m2 / SP / g，平均二次粒径≥50 nm和<170nm，pH为3-12。 在化学机械抛光方法中，通过使用用于化学机械抛光的水分散剂，对具有金属层和特定绝缘层的被抛光物体进行化学和机械抛光。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2011003665A

公开(公告)日：2011-01-06

申请号：JP2009144526

申请日：2009-06-17

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： KAMEI YASUTAKA ,  KAWAMOTO TATSUYOSHI ,  KONNO TOMOHISA ,  KUBOTA KIYONOBU

IPC: H01L21/304 ,  B24B37/00 ,  C09K3/14

Abstract: PROBLEM TO BE SOLVED: To provide an aqueous dispersant for chemical-mechanical polishing simultaneously, having a high polishing speed and high planarization characteristics for a wiring material and a barrier metal film and an interlayer insulating film, and to provide a chemical-mechanical polishing method that uses the dispersant.SOLUTION: The aqueous dispersant for chemical mechanical polishing contains (A) abrasive grains, (B) a compound having at least two carbonyl groups, and (C) a heterocyclic compound, and is used for the method of polishing a substrate provided with a cobalt-containing film on the substrate.

Abstract translation: 要解决的问题：为了提供同时用于化学机械抛光的水性分散剂，对布线材料，阻挡金属膜和层间绝缘膜具有高抛光速度和高平坦化特性，并提供化学机械抛光方法 用于化学机械抛光的水分散剂包含（A）磨料颗粒，（B）具有至少两个羰基的化合物和（C）杂环化合物，并且用于抛光方法 在基板上设置有含钴膜的基板。

公开(公告)号：JP2005255983A

公开(公告)日：2005-09-22

申请号：JP2005025112

申请日：2005-02-01

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： KONNO TOMOHISA ,  KUBOTA KIYONOBU ,  HATTORI MASAYUKI ,  KAWAHASHI NOBUO

IPC: B24B37/00 ,  C11D3/37 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To obtain a cleaning composition which has a high ability to remove impurities such as residual abrasive grains, residual polishing wastes, and metal ions without corroding metal wirings when contaminants on the surface of a semiconductor substrate having the metal wirings are removed after the substrate is subjected to chemical and mechanical polishing, to provide a washing method for the semiconductor substrate using the same, and a manufacturing method for a semiconductor device including the washing method. SOLUTION: The cleaning composition to use after the chemical and mechanical polishing contains (A) an organic polymer particle having a crosslinking structure and (B) a surfactant. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 待解决的问题：为了获得清洗组合物，当具有金属的半导体衬底的表面上的污染物时，如果残留的磨料颗粒，残留的抛光废料和金属离子等杂质能够腐蚀金属配线， 在对基板进行化学和机械抛光之后去除布线，以提供使用该衬底的半导体衬底的洗涤方法，以及包括该洗涤方法的半导体器件的制造方法。 解决方案：化学和机械抛光后使用的清洁组合物含有（A）具有交联结构的有机聚合物颗粒和（B）表面活性剂。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2000109743A

公开(公告)日：2000-04-18

申请号：JP27950898

申请日：1998-10-01

Applicant: JSR CORP

Inventor： KUBOTA KIYONOBU ,  OTSUKI TOSHITAKA

IPC: G02B6/00 ,  C09D123/00 ,  G02B6/44

Abstract: PROBLEM TO BE SOLVED: To obtain the subject covering material causing no stickiness in high- humidity/temperature and no pistoning, and capable of providing a plastic optical fiber excellent in handling and preservation stability by using a specified polyolefin-based polymer. SOLUTION: This composition comprises a polar group-including olefin-based polymer. The polar group-including polymer is preferably obtained by addition copolymerization or graft copolymerization of a malefic anhydride-modified low molecular polypropylene or a polyolefin-based polymer with a polar group- including unsaturated monomer such as an unsaturated carboxylic acid (derivative), an unsaturated epoxide compound, an unsaturated hydroxy compound. The covering material can be coated on a core (preferably norbornene-based resin)/cladding layer or a core/cladding/primary covering material (gas barrier layer or the like) of the plastic optical fiber. The covered optical fiber can be used for sensors, medical optical fibers or the like.

公开(公告)号：JPH10168290A

公开(公告)日：1998-06-23

申请号：JP34457296

申请日：1996-12-09

Applicant: JSR CORP

Inventor： KUBOTA KIYONOBU ,  OTSUKI TOSHITAKA

IPC: C08L45/00 ,  C08L65/00 ,  C08L79/00 ,  C08L81/02

Abstract: PROBLEM TO BE SOLVED: To obtain a resin composition improved in adhesion to metallic materials without detriment to a high rigidity and high heat resistance by blending a polyarylene sulfide resin with a cyclic polyolefin resin and a polycarbodiimide. SOLUTION: The polyarylene sulfide resin (A) is desirably poly-p-phenylene sulfide because of its moldability. The cyclic polyolefin resin (B) is a ring opening polymer of a monomer represented by the formula (wherein R to R are each H, a halogen, or a 1-10C hydrocarbon group; R and R or R and R may be combined with each other; and m and p are each an integer of 0 or greater), a product of hydrogenation thereof or the like. Component B is used in an amount of desirably 50-5wt.% based on the total weight of components A and B. The polycarbodiimide is synthesized by reacting an organic polyisocyanate in the presence of a catalyst and is desirably used in an amount of 0.1-20 pts.wt. per 100 pts.wt. total of components A and B.

公开(公告)号：JP2002170793A

公开(公告)日：2002-06-14

申请号：JP2000366140

申请日：2000-11-30

Applicant: JSR CORP

Inventor： SUZUKI HIDENORI ,  KUBOTA KIYONOBU ,  IWAMA ICHIRO ,  NAKASE YOSHIHISA

IPC: B24B57/02 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To produce a CMP slurry having the satisfactorily small number of coarse particles with which a semiconductor wafer can be polished without generating scratches from a CMP slurry waste liquid. SOLUTION: In a method for manufacturing a CMP slurry raw material, the raw material of the CMP slurry is reproduced from the waste liquid of the CMP slurry by executing a step of removing the coarse particles in the CMP slurry waste liquid used for polishing to reduce the number of the coarse particles in the waste liquid and a step of concentrating the liquid to obtain the material by applying a centrifugal force to the liquid after the removing step.