PREPARATION OF POSITIVE RESIST COMPOSITION

    公开(公告)号:JPH02154259A

    公开(公告)日:1990-06-13

    申请号:JP30855988

    申请日:1988-12-06

    Abstract: PURPOSE:To eliminate a filtration stage and a drying stage of a generated product and to shorten a working time by mixing directly an alkali-soluble resin with a soln. of quinonediazide sulfonic acid ester formed from a soln. of a condensation reaction of a quinonediazide sulfonic acid halide with a phenolic compd. without isolating the quinonediazide sulfonic acid ester. CONSTITUTION:A soln. of quinonediazide sulfonic acid ester is obtd. by condensing a quinonediazide sulfonic acid halide with a phenolic compd. in a solvent. The obtd. soln. is mixed with a soln. prepd. by dissolving an alkali-soluble resin in a resist solvent. Impurities such as solvent, etc. used for the condensation reaction are removed from the soln. Solvents, etc. used for the condensation reaction are removed by distillation, etc., and salts generated by the condensation reaction are removed by filtration, etc., and other salts and metals are removed by washing with water. The soln. freed of impurities is subjected, if necessary, to adjustment of concn., then filtered, etc. in order to remove fine dusts. Thus, a positive resist is obtd.

    FORMATION OF POSITIVE TYPE RESIST PATTERN FOR PRODUCTION OF INTEGRATED CIRCUIT

    公开(公告)号:JPH09114094A

    公开(公告)日:1997-05-02

    申请号:JP27640296

    申请日:1996-10-18

    Abstract: PROBLEM TO BE SOLVED: To form a resist pattern with high resolution by using a compsn. for a positive type resist contg. specified components and having high γ-value. SOLUTION: A compsn. for a positive type resist contg. quinonediazido- sulfonic ester of a phenolic compd. and novolak resin is prepd. In the high-speed liq. chromatographic pattern of the ester measured with a detector using UV of 254nm, the pattern area of quinonediazido-sulfonic diester of a polyhydric phenolic compd. having three or more OH groups is >=50% of the total pattern area. The compsn. is applied on a substrate to form a resist film and this resist film is exposed through a pattern and developed to form the objective resist pattern.

    POSITIVE TYPE RESIST COMPOSITION
    5.
    发明专利

    公开(公告)号:JPH04241353A

    公开(公告)日:1992-08-28

    申请号:JP317291

    申请日:1991-01-16

    Abstract: PURPOSE:To increase gamma-value by using an alkali-soluble resin and quinonediazidosulfonic ester of a phenol compd. having a specified structure. CONSTITUTION:This positive type resist compsn. contains an alkali-soluble resin and one or more kinds of quinonediazidosulfonic esters of a phenol compd. represented by formula I, wherein each of Y1 and Y2 is H, alkyl or -OH, each of Z1-Z7 is H, -OH, alkyl, cycloalkyl, aryl or halogen, at least one of Y1, Y2 and Z1-Z7 is -OH and each of R1-R5 is H, alkyl, alkenyl, cycloalkyl or aryl. Novolak resin is suitable for use as the alkali-soluble resin.

    COMPOSITION FOR POSITIVE TYPE RESIST

    公开(公告)号:JPH02103543A

    公开(公告)日:1990-04-16

    申请号:JP25893788

    申请日:1988-10-13

    Abstract: PURPOSE:To improve a gamma value and residual film rate by incorporating a specific ratio of the ester bodies of the quinone diazide sulfonate of two kinds of phenol compds. CONSTITUTION:This compsn. is constituted of an alkaline soluble resin and radiation sensitive component and the radiation sensitive component is made of the quinone diazide sulfonate of the phenol compds. The area of the pattern of the diester component of the quinone diazide sulfonate of octavalent or higher valent phenol compds. is >=40% of the total pattern area of the radiation sensitive component. The area of the pattern of the total ester component of the quinone diazide sulfonate of the octavalent or higher valent phenol compds. is >=5% and

    SOLVENT, SOLUTION-TYPE QUINONE DIAZIDE PHOTOSENSITIVE AGENT, PHOTORESIST COMPOSITION, AND CLEANING LIQUID

    公开(公告)号:JPH0764284A

    公开(公告)日:1995-03-10

    申请号:JP20973993

    申请日:1993-08-24

    Abstract: PURPOSE:To obtain a good solvent for a quinone diazide photosensitive agent, to improve stability and safeness of the agent by preparing the photosensitive as a soln., to make management and control of the process easy, to suppress precipitation of fine foreign matter in a positive resist which is conventionally regarded as a problem, and to make possible fast and high reliable cleaning by using the solvent as a cleaning liquid for various devices and facilities in which a quinone diazide compd. is used as a photosensitive agent, for example, for a spin coater line. CONSTITUTION:This solvent for a quinone diazide compd. essentially consists of at least one compd. containing fluorine atoms selected from alcohols, esters, ethers, and phenols. The photosensitive agent is prepared by dissolving a quinone diazide compd. in this solvent. The positive photoresist compsn. contains an alkali-soluble resin, quinone diazide compd. as the photosensitive agent, and this solvent. Further, the cleaning liquid essentially consists of the solvent and is used for such a line in which a resist liquid containing a quinone diazide compd. is passed through.

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