公开(公告)号：JP2012101964A

公开(公告)日：2012-05-31

申请号：JP2010250645

申请日：2010-11-09

申请人： Hiroshi Fujioka ,  National Institute Of Advanced Industrial Science & Technology ,  Tokai Carbon Co Ltd ,  東海カーボン株式会社 ,  独立行政法人産業技術総合研究所 ,  洋 藤岡

发明人： HIRASAKI TETSURO ,  SHOKU HITOSHI ,  YAMASHITA JUNYA ,  HATORI HIROAKI ,  KODAMA MASAYA ,  FUJIOKA HIROSHI

IPC分类号： C30B29/02 ,  C01B31/04 ,  C30B7/06 ,  H01L21/20

摘要： PROBLEM TO BE SOLVED: To provide a substrate for epitaxial growth which is excellent in flatness, crystallinity, orientation, in which thermal conductivity in a thickness direction is high, and which is excellent in radiation property.SOLUTION: The substrate for epitaxial growth is constituted by forming a highly crystalline graphite layer in which arithmetic average surface roughness Ra is 0.05 μm or less, the maximum value of the surface roughness is 0.5 μm or less, half value of width of the locking curve of (0002) face by an X-ray diffraction method is 1.5° or less, and the ratio of the peak intensity of a D band relative to the peak intensity of a G band in a Raman spectrum is 0.01 or less on one main surface of a carbon substrate.

摘要翻译： 解决的问题：提供一种外延生长用基板，其平坦度，结晶性，取向性优异，厚度方向的热导率高，散射性优异。 解决方案：用于外延生长的衬底通过形成高度结晶的石墨层构成，其中算术平均表面粗糙度Ra为0.05μm以下，表面粗糙度的最大值为0.5μm以下，宽度的半值 （0002）面通过X射线衍射法的锁定曲线为1.5°以下，D波段的峰值强度相对于拉曼光谱中的G波段的峰值强度的比例为0.01以下 碳基板的一个主表面。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2003212696A

公开(公告)日：2003-07-30

申请号：JP2002009651

申请日：2002-01-18

申请人： RICOH KK

发明人： IWATA HIROKAZU ,  SARAYAMA SHOJI ,  SHIMADA MASAHIKO ,  YAMANE HISANORI ,  ARAKI TAKASHI

IPC分类号： C30B29/38 ,  C30B7/06

摘要： PROBLEM TO BE SOLVED: To stably grow a crystal of a group III nitride. SOLUTION: When the crystal of the group III nitride 25 constituted of a group III metal and nitrogen is grown from a mixed melt 24, formed from an alkali metal and a group III metal, and a substance containing at least nitrogen in a reaction vessel 12, a part brought into contact with the mixed melt 24 of the reaction vessel 12 is constituted of a dense material. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2659243B2

公开(公告)日：1997-09-30

申请号：JP16975689

申请日：1989-07-03

申请人： NIPPON DENSHIN DENWA KK

发明人： KURIHARA TAKASHI ,  TOMARU AKIRA ,  KAINO TOSHIKUNI

IPC分类号： C30B7/06 ,  C30B29/54

公开(公告)号：JPH08253399A

公开(公告)日：1996-10-01

申请号：JP8341795

申请日：1995-03-15

申请人： TORAY INDUSTRIES

发明人： YAMAHO TOMOYA

IPC分类号： G02F1/35 ,  C07D498/04 ,  C30B7/06 ,  C30B29/54 ,  G02F1/355 ,  G02F1/361

摘要： PURPOSE: To obtain a process which surely produces a DNBB single crystal of high quality by using an effective equipment while avoiding such intrinsic problem on the temperature-changing process that the temperature fluctuation of the solution in the equipment influences the crystal produced. CONSTITUTION: In the production of a single crystal of DNBB represented by the formula from its solution in an organic solvent, DNBB is precipitated in such an environment that the deteriorated components are removed from the solution, while varying the temperature of the solution in the organic solvent periodically in a certain range in the growing tank where the DNBB is precipitated to give the single crystal.

公开(公告)号：JPH0455400A

公开(公告)日：1992-02-24

申请号：JP16743390

申请日：1990-06-25

申请人： SHARP KK

发明人： YANO KOZABURO ,  INOUE YOSHIHISA ,  TAKANO TOSHIHIKO ,  TOKUMARU TERUTAKA

IPC分类号： G02F1/35 ,  C30B7/06 ,  C30B29/54 ,  G02F1/355 ,  G02F1/361 ,  H01S3/108

摘要： PURPOSE:To improve reproducibility by putting a seed crystal of 3-methyl-4- nitropyridine-1-oxide in a meshy vessel and suspending this vessel in a soln. CONSTITUTION:A soln. prepd. by dissolving 3-methyl-4-nitropyridine-1-oxide (POM) in a polar org. solvent such as methyl acetate is poured into a thick glass vessel 2 set in a constant-temp. water bath 6. A fine seed crystal 8 of POM with a well exposed growth face is put in a stainless basket 7 and this basket 7 is suspended from the top of the vessel 2 so that it is positioned at the nearly central part of the vessel 2. A glass plate 4 for controlling the rate of evaporation is fixed on the top of the vessel 2 with a weight 5, the area of the opening of the vessel 2 is regulated with the plate 4 and the solvent is slowly evaporated to obtain a transparent org. single crystal.

公开(公告)号：JPH0369598A

公开(公告)日：1991-03-25

申请号：JP20575589

申请日：1989-08-10

申请人： FURUKAWA ELECTRIC CO LTD

发明人： KABUMOTO AKIRA

IPC分类号： G02F1/35 ,  C30B7/06 ,  C30B29/54 ,  G02F1/355 ,  G02F1/361

摘要： PURPOSE:To suppress polycrystallization by using a solvent mixture prepd. by mixing plural solvents which are respectively different in solubility as the solvent for the soln. of an org. nonlinear optical material. CONSTITUTION:The org. nonlinear optical material, such as 2-(alpha- methylbenzylamino)-5-nitropyridine, (hereafter expressed as the 'optical material') is weighed and put into a glass vessel 1. The solvent mixture composed of the solvent, such as acetone, having the high solubility of the optical material and the solvent, such as n-hexane, the small solubility of the optical material is added to the vessel and heated up to completely dissolve the material. This soln. is filtered by a filter to remove impurities; thereafter, the glass vessel 1 is disposed in a thermostatic water chamber 5 to slowly cool the soln. to a prescribed temp. A single crystal 4 of the optical material attached to a platinum wire is hung in this growing soln. 6 and is rested still. Gaseous N2 3 is made flow into a glass tube 2 installed in the upper part of the glass vessel 1 from one end thereof to control the evaporation rate of the soln. The crystal is grown for about 3 to 5 days. The single crystal of the optical material is thus obtd.

公开(公告)号：JP6479415B2

公开(公告)日：2019-03-06

申请号：JP2014223187

申请日：2014-10-31

申请人： 国立研究開発法人産業技術総合研究所

发明人： 野田 祐樹 ,  堀内 佐智雄 ,  山田 寿一 ,  長谷川 達生

IPC分类号： C30B7/06 ,  H01L21/312 ,  H01L27/10 ,  H01G4/06 ,  C30B29/54

公开(公告)号：JP5543368B2

公开(公告)日：2014-07-09

申请号：JP2010541052

申请日：2008-12-23

申请人： エフ.ホフマン−ラ ロシュ アーゲーF. Hoffmann−La Roche Aktiengesellschaft

发明人： ブーベンドルフ，アンドレ ,  ゴルトバッハ，ピエール ,  グラスマン，オラフ ,  ヘニッヒ，ミハエル ,  ザウアー，イネス ,  トリュサルディ，レネ

IPC分类号： C07C233/52 ,  A61K9/08 ,  A61K31/215 ,  A61P31/16 ,  A61P43/00 ,  C07C231/24 ,  C30B7/06 ,  C30B29/54

CPC分类号： C07C233/52 ,  C07C231/22

公开(公告)号：JP2006021976A

公开(公告)日：2006-01-26

申请号：JP2004203696

申请日：2004-07-09

申请人： Ricoh Co Ltd ,  株式会社リコー

发明人： AZUMA YASUHIRO ,  SUZUKI YUKIE

IPC分类号： C30B29/54 ,  C30B7/06 ,  G02F1/361 ,  H01L51/50 ,  H05B33/10

摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film-like organic single crystal by which a large size, high quality organic single crystal 6 can be manufactured with a desired thickness by a solvent evaporation method even when the organic material is unstable to heat or the like and cannot be crystallized by a melt method, and to provide an apparatus for manufacturing the thin film-like organic single crystal 6 which is suitable for manufacturing the large size, high quality organic single crystal 6 having a desired thickness. SOLUTION: The method for manufacturing the thin film-like organic single crystal comprises filling a solution 5, obtained by dissolving an organic substance to be crystallized in a solvent, into a gap formed by a couple of substrates 4a, 4b, and then forming the organic single crystal 6 by controlling the evaporation speed of the solvent from the couple of substrates 4a, 4b between which the solution 5 is filled. COPYRIGHT: (C)2006,JPO&NCIPI

摘要翻译： 要解决的问题：提供一种制造薄膜状有机单晶的方法，通过该方法可以通过溶剂蒸发法以期望的厚度制造大尺寸，高质量的有机单晶6，即使当有机 材料对热等不稳定并且不能通过熔融法结晶，并且提供一种适用于制造具有具有以下特征的大尺寸，高质量的有机单晶6的薄膜状有机单晶6的制造装置 所需厚度。 解决方案：制造薄膜状有机单晶的方法包括将通过将待结晶的有机物质溶解在溶剂中而获得的溶液5填充到由一对基板4a，4b形成的间隙中， 然后通过从其中填充溶液5的一对基板4a，4b控制溶剂的蒸发速度来形成有机单晶6。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2003238286A

公开(公告)日：2003-08-27

申请号：JP2002295164

申请日：2002-10-08

申请人： SEIKO EPSON CORP

发明人： MORII KATSUYUKI ,  MASUDA TAKASHI

IPC分类号： H05B33/10 ,  C30B7/06 ,  C30B29/54 ,  H01L21/288 ,  H01L51/00 ,  H01L51/05 ,  H01L51/40 ,  H01L51/50 ,  H05B33/14

摘要： PROBLEM TO BE SOLVED: To provide a method for crystallizing a trace amount of solution arranged at a prescribed position on a substrate. SOLUTION: A solution in which a thin film-forming material is dissolved into a solvent is ejected by an inkjet method, so that the droplets of the solution are arranged on the substrate. The partial pressure of a gas made up of components same as those in the solvent in the vicinity of the droplets directly after the arrangement is controlled, e.g. to that equal to the saturation vapor pressure or that almost equal to the saturation vapor pressure, so that crystalline nuclei are formed in the above solution. After the formation of the crystalline nuclei, the partial pressure of the gas in the vicinity of the droplets is reduced, e.g. to the low one of 1/10 to 1/100 of the saturation vapor pressure. As the solvent, a poor solvent is used. COPYRIGHT: (C)2003,JPO