摘要:
PROBLEM TO BE SOLVED: To provide an ECR ion source device which easily forms endohedral fullerenes by using an ion source, extracts them as an ion beam and analyzes them. SOLUTION: The ECR ion source device 50 has a gaseous material at normal temperature, an ECR chamber 1a capable of generating a gaseous ECR plasma of a material with a high melting point, a process chamber 1b having an evaporation source 108 for supplying fullerene gas, an ion extracting meshed electrode 104, and an ion aperture 107. In the ECR ion source device 50, plasma potential of the ECR plasma is controlled by controlling applied voltages to the ion extracting meshed electrode 104 and the ion aperture 107, ions only from the ECR plasma are extracted to the process chamber 1b, the ions are implanted into the fullerenes, and the endohedral fullerenes are analyzed by extracting them from the ion aperture 107 as an ion beam 94 as well as generation of a fullerene derivative. COPYRIGHT: (C)2011,JPO&INPIT
摘要:
PROBLEM TO BE SOLVED: To provide a hybrid deflector for reducing energy contamination in ion implantation, and to provide a deflection method of ion beam. SOLUTION: The hybrid deflector 500 for an ion implantation system is composed of a magnetic deflection module 350 which works to deflect ion beam from a beam axis, an electrostatic deflection module 504 which works to deflect the ion beam from the beam axis, and a controller 304 which, based on one or a plurality of input controlling signals, operates either the magnetic deflection module or the electrostatic deflection module selectively. The deflection method of ion beam includes a step in which one or a plurality of characteristics of beam are identified and a step in which, based on the identification, either of the magnetic deflection module or the electrostatic deflection module are operated selectively. COPYRIGHT: (C)2009,JPO&INPIT
摘要:
PROBLEM TO BE SOLVED: To provide an ion source capable of preventing a magnetic field for generating plasma from leaking into an electrode space and obtaining a stable ion beam for a long period by restraining contamination and damage on the surface of an electrode and obtaining the ion beam with suitable focusing performance in which radiation of a beam caused by a leaked magnetic field is restrained. SOLUTION: In the ion source for pulling out the ion beam by a cylindrical discharge chamber 1, a means for generating the magnetic field in the discharge chamber 1, and an ion pulling-out electrode which generates plasma by introducing a microwave into the discharge chamber 1 by means of a conversion waveguide 9 of the microwave converting from a rectangular cross-section to a round cross-section and is formed at three pieces from the generated plasma, a magnetic body is arranged on the periphery or a part of the periphery of the means for generating the magnetic field. A part of the conversion waveguide 9 and a part of the discharge chamber 1 are formed with a magnetic body, and a plasma electrode 11 is formed with a magnetic body. COPYRIGHT: (C)2009,JPO&INPIT