公开(公告)号：KR1020110038341A

公开(公告)日：2011-04-14

申请号：KR1020090095594

申请日：2009-10-08

申请人： 동우 화인켐 주식회사

发明人： 이경호 ,  오영남 ,  김성훈 ,  성시진 ,  김상태

IPC分类号： G03F7/42

CPC分类号： G03F7/422 ,  G03F7/0226 ,  G03F7/0233 ,  G03F7/0397 ,  G03F7/091 ,  G03F7/168 ,  G03F7/38 ,  H01L21/0337

摘要： PURPOSE: A photosensitive resin and a thinner composition for eliminating an anti-reflection film are provided to uniformly eliminate unnecessary photo-resist on the rear side and the edge side of a substrate. CONSTITUTION: A photosensitive resin and a thinner composition for eliminating an anti-reflection film includes a carbonate compound and a solvent including one, two or more of a group including alkyl hydroxyl propionate, propylene glycol alkyl ether acetate, propylene glycol alkyl ether, and alkyl alkoxypropionate. The carbonate compound is represented by chemical formula 1. In the chemical formula 1, R1 and R2 are respectively C1 to C10 of alkyl group or C1 to C10 of hydroxyl alkyl group. The R1 and the R1 are capable of bonding to form a ring.

摘要翻译： 目的：提供用于消除防反射膜的感光性树脂和较薄的组合物，以均匀地消除基板的背面侧和边缘侧的不必要的光致抗蚀剂。 构成：用于消除抗反射膜的感光性树脂和较薄的组合物包括碳酸酯化合物和包括一种或两种以上的包括羟基丙酸烷基酯，丙二醇烷基醚乙酸酯，丙二醇烷基醚和烷基的烷基的溶剂 alkoxypropionate。 化学式1表示碳酸酯化合物。在化学式1中，R1和R2分别为烷基的C1〜C10或羟基烷基的C1〜C10。 R1和R1能够键合形成环。

公开(公告)号：KR1020110021189A

公开(公告)日：2011-03-04

申请号：KR1020090078827

申请日：2009-08-25

申请人： 주식회사 이엔에프테크놀로지

发明人： 이상대 ,  박영진 ,  한두석

IPC分类号： G03F7/42

CPC分类号： G03F7/425 ,  C11D7/263 ,  C11D7/266 ,  C11D11/0047 ,  G03F7/0048 ,  G03F7/0236 ,  G03F7/38 ,  G03F7/422

摘要： PURPOSE: A thinner composition which can reduce consumption of photoresists is provided to spread evenly photoresists on the whole surface of a substrate by firstly surface-treating the photoresists on the substrate before the photoresists is applied to the substrate. CONSTITUTION: A thinner composition which can reduce consumption of photoresists comprises, based on the total weight of the composition, 0.01-20 weight% of organic solvents which has a boiling point of 180°C or more and can perform hydrogen bond, 10-70 weight% of glycols which has a boiling point of 150°C or less and can perform hydrogen bond with organic solvents, and 10-89.99 weight% of esters.

摘要翻译： 目的：提供可以减少光致抗蚀剂消耗的较薄组合物，以便在将光致抗蚀剂施加到基底之前首先对基片上的光致抗蚀剂进行表面处理，以使基片的整个表面均匀分布光刻胶。 构成：可以减少光致抗蚀剂消耗的较薄的组合物包括：基于组合物的总重量为0.01-20重量％的沸点为180℃或更高并可以进行氢键的有机溶剂，10-70 沸点为150℃以下且可与有机溶剂进行氢键的二元醇的重量％，以及10-89.99重量％的酯。

公开(公告)号：KR1020100055818A

公开(公告)日：2010-05-27

申请号：KR1020080114696

申请日：2008-11-18

申请人： 세메스 주식회사

发明人： 함승원

IPC分类号： H01L21/302 ,  G02F1/13

CPC分类号： G03F7/38 ,  G03F7/40 ,  H01L21/67109

摘要： PURPOSE: A baking device is provided to suppress the deformation of a transfer shaft by transferring heat from a baking unit to the transfer shaft. CONSTITUTION: An air blower(110) supplies air to a substrate to float the substrate with a photoresist film. The air blower includes a plate with a plurality of holes in which the air flows. A baking unit(160) hardens the photoresist film and includes a heater arranged between adjacent holes inside the plate.

摘要翻译： 目的：提供一种烘烤装置，用于通过将热量从烘烤单元传递到传送轴来抑制传送轴的变形。 构成：鼓风机（110）将空气供给到基板上以使光致抗蚀剂膜浮起。 鼓风机包括具有空气流动的多个孔的板。 烘烤单元（160）硬化光致抗蚀剂膜并且包括布置在板内的相邻孔之间的加热器。

公开(公告)号：KR100958689B1

公开(公告)日：2010-05-20

申请号：KR1020070097602

申请日：2007-09-27

申请人： 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드

发明人： 장펭 ,  커지다니엘메간킹 ,  칼와키유진조셉쥬니어 ,  바버레슬리콕스

IPC分类号： G03F7/32

CPC分类号： G03F7/32 ,  G03F7/0048 ,  G03F7/091 ,  G03F7/16 ,  G03F7/168 ,  G03F7/3021 ,  G03F7/322 ,  G03F7/38 ,  G03F7/40 ,  G03F7/425

摘要： 본 발명은 반도체 소자의 제조시에 결함의 수를 감소시키기 위하여 사용되는, 하나 이상의 계면활성제를 포함하는 공정액에 관한 것이다. 특정의 구체예에서, 공정액은 패턴화된 포토레지스트층의 현상 중에 또는 현상후에 세정액으로서 사용될 때 패턴 붕괴 또는 선폭 조도(line width roughness)와 같은 현상후 결함을 감소시킬 수 있다. 본 발명의 공정액을 이용하는 다수의 포토레지스트 코팅 기판상에서 패턴 붕괴 및/또는 선폭 조도와 같은 결함의 수를 감소시키는 방법도 개시된다.

公开(公告)号：KR1020100008759A

公开(公告)日：2010-01-26

申请号：KR1020090062553

申请日：2009-07-09

申请人： 도쿄 오카 고교 가부시키가이샤

发明人： 우에노나오히사 ,  이시카와기요시 ,  사와노아츠시 ,  와키야가즈마사

IPC分类号： G03F7/00

CPC分类号： G03F7/40 ,  G03F7/0035 ,  G03F7/11 ,  G03F7/20 ,  G03F7/38 ,  G03F7/405 ,  G03F7/70466 ,  H01L21/0274

摘要： PURPOSE: A coating agent for pattern micronization and a micro-pattern formation method using the same are provided to improve the micronizing capacity of the coating agent by employing water-soluble peptide. CONSTITUTION: A coating agent for pattern micronization comprises water-soluble peptide, such as water-soluble collagen peptide, which has a triple spiral structure in part. The average molecular weight of the water-soluble peptide is 10000 or less. The coating agent for pattern micronization also includes a surfactant and an antiseptic.

摘要翻译： 目的：提供用于图案微粉化的涂布剂和使用其的微图案形成方法，以通过使用水溶性肽来改善涂布剂的微粉化能力。 构成：用于图案微粉化的包衣剂包括水溶性肽，例如水溶性胶原肽，其部分具有三重螺旋结构。 水溶性肽的平均分子量为10000以下。 图案微粉化用涂布剂还包括表面活性剂和防腐剂。

公开(公告)号：KR1020090124196A

公开(公告)日：2009-12-03

申请号：KR1020080050262

申请日：2008-05-29

申请人： 동우 화인켐 주식회사

发明人： 이경호 ,  오영남 ,  권기진

IPC分类号： G03F7/32 ,  G03F7/42

CPC分类号： G03F7/422 ,  C11D3/044 ,  C11D7/266 ,  G03F7/091 ,  G03F7/168 ,  G03F7/32 ,  G03F7/38 ,  G03F7/423

摘要： PURPOSE: A thinner composition for removing a photosensitive resin and a bottom antireflective coating is provided to obtain excellent solubility and EBR property and to improve the coating property of photoresist. CONSTITUTION: A thinner composition for removing a photosensitive resin and a bottom antireflective coating comprises 30 ~ 90 wt% of at least one selected from the group consisting of ethyl-3-ethoxypropionate (EEP), methyl-3-methoxypropionate (MMP) and their mixture; 1 ~ 20 wt% of ethyl lactate (EL); and 5 ~ 50 wt% of cyclohexanone (CHN). The thinner composition comprises further a surfactant. The surfactant is a fluorine-based surfactant, a nonionic surfactant or an ionic surfactant.

摘要翻译： 目的：提供用于去除感光树脂和底部抗反射涂层的较薄组合物，以获得优异的溶解度和EBR性能并改善光致抗蚀剂的涂布性能。 构成：用于除去感光性树脂和底部抗反射涂层的较薄组合物含有30〜90重量％的选自3-乙氧基丙酸乙酯（EEP），3-甲氧基丙酸甲酯（MMP）及其 混合物; 1〜20wt％乳酸乙酯（EL）; 和5〜50重量％的环己酮（CHN）。 更薄的组合物还包含表面活性剂。 表面活性剂是氟系表面活性剂，非离子表面活性剂或离子表面活性剂。

公开(公告)号：KR1020090078913A

公开(公告)日：2009-07-21

申请号：KR1020080004767

申请日：2008-01-16

申请人： 에스케이하이닉스 주식회사

发明人： 심귀황

IPC分类号： H01L21/027

CPC分类号： G03F7/405 ,  G03F7/0392 ,  G03F7/091 ,  H01L21/0273 ,  G03F7/265 ,  G03F7/38

摘要： A manufacturing method of a semiconductor device is provided to reduce a manufacturing cost and to enhance productivity by omitting several manufacturing processes. An etching target layer(112), a chemical-amplified photoresist layer, and an anti-reflective layer are successively formed on a semiconductor substrate(110). An exposure process is performed to form exposure parts in the photoresist layer. A thermal process is performed to cause the decrosslinking reaction in the anti-reflective layer above the exposure parts. The anti-reflective layer and the exposure parts are removed from the decrosslinked part. A developing process is performed to form photoresist layer patterns(114a) and anti-reflective layer patterns(116a). A silylation process is performed to form silylation patterns(118) on the sidewalls of the photoresist layer patterns. The anti-reflective layer patterns and the photoresist layer patterns are removed. The etching target layer is patterned by using the silylation patterns as an etch mask.

摘要翻译： 提供半导体器件的制造方法，以减少制造成本并通过省略若干制造工艺来提高生产率。 在半导体衬底（110）上依次形成蚀刻目标层（112），化学放大光致抗蚀剂层和抗反射层。 进行曝光处理以在光致抗蚀剂层中形成曝光部分。 进行热处理以使曝光部分上方的抗反射层中的去交联反应。 从反交联部分除去抗反射层和曝光部分。 执行显影处理以形成光致抗蚀剂层图案（114a）和抗反射层图案（116a）。 进行甲硅烷基化方法以在光致抗蚀剂层图案的侧壁上形成甲硅烷基化图案（118）。 去除抗反射层图案和光致抗蚀剂层图案。 通过使用甲硅烷基化图案作为蚀刻掩模来对蚀刻目标层进行图案化。

公开(公告)号：KR1020090063979A

公开(公告)日：2009-06-18

申请号：KR1020070131526

申请日：2007-12-14

申请人： 코오롱인더스트리 주식회사

发明人： 백수민 ,  문희완 ,  조승제 ,  이병일

IPC分类号： H01L21/027

CPC分类号： H01L21/0273 ,  G03F7/168 ,  G03F7/38

摘要： A method for manufacturing a pattern using a thick dry film photoresist is provided to increase the adhesion of the film by performing a bake process after a film lamination process. A thick dry film photoresist is laminated on a surface of a processing target by performing a lamination process. A bake process about the thick dry film photoresist laminated in the surface of the processing target is performed. The exposure process and the development process are performed. The bake process is performed in a temperature range of 50 to 150 degrees centigrade for 30 seconds to 20 minutes. The thick dry film photoresist includes a photoresist layer having the thickness of 50 um at least.

摘要翻译： 提供了使用厚的干膜光致抗蚀剂制造图案的方法，以通过在膜层压工艺之后进行烘烤处理来增加膜的粘合性。 通过进行层压处理，在加工对象的表面上层叠厚的干膜光致抗蚀剂。 执行层压在处理目标表面的厚的干膜光致抗蚀剂的烘烤工艺。 进行曝光处理和显影处理。 烘烤过程在50至150摄氏度的温度范围内进行30秒至20分钟。 厚的干膜光致抗蚀剂至少包括厚度为50μm的光致抗蚀剂层。

公开(公告)号：KR1020090052071A

公开(公告)日：2009-05-25

申请号：KR1020070118595

申请日：2007-11-20

申请人： 에스케이하이닉스 주식회사

发明人： 양철훈

IPC分类号： H01L21/027

CPC分类号： H01L21/0273 ,  G03F7/38 ,  H01L21/67098

摘要： 본 발명은 반도체 소자의 패턴 형성 방법에 관한 것으로, 반도체 기판 상에 피식각층을 형성하는 단계와, 상기 피식각층 상에 포토 레지스트를 형성하는 단계와, 상기 포토 레지스트에 선택적으로 노광 공정을 실시하는 단계와, 상기 포토 레지스트 표면의 표면 장력을 증가시키기 위하여 상기 포토 레지스트 표면에 변성층을 형성하는 단계 및 상기 포토 레지스트에 현상 공정을 실시하는 단계를 포함하기 때문에, 결함없는 정밀한 포토 레지스트 패턴을 형성할 수 있기 때문에 더욱 고성능의 반도체 소자의 제조가 가능하다.
노광 공정, 포토 레지스트, 현상 공정, UV 베이크

公开(公告)号：KR1020080046104A

公开(公告)日：2008-05-26

申请号：KR1020070117928

申请日：2007-11-19

申请人： 에이에스엠엘 네델란즈 비.브이.

发明人： 구이쳉-쿤 ,  펠렌스루디잔마리아

IPC分类号： H01L21/027 ,  G03F7/20

CPC分类号： G03F7/70808 ,  G03F7/38 ,  H01L21/683

摘要： A lithographic apparatus and method are provided to ensure reliable electrical connection without having leakage of chemical or solution on a resist free region or therein, using a ring seal formed by deep ultraviolet radiation. A method of forming a ring seal on a substrate(W) on which resist(1) is partially or entirely applied, comprises a step of irradiating a ring of resist on the substrate with deep ultraviolet radiation. The ring of resist is irradiated to remove a pattern from the ring of resist or to prevent the irradiated ring of resist from being patterned. A wavelength of the deep ultraviolet radiation can cause cross-linking or polymerization within the ring of the resist.

摘要翻译： 提供光刻设备和方法以确保可靠的电连接，而不会使用由深紫外线辐射形成的环形密封件而在无抗蚀剂区域或其中的化学或溶液泄漏。 在基板（W）上形成环形密封件的方法，其上部分地或全部地涂覆有抗蚀剂（1），包括用深紫外线辐射基板上的抗蚀剂环的步骤。 照射抗蚀剂环以从抗蚀剂环上除去图案，或防止照射的抗蚀剂环被图案化。 深紫外线辐射的波长可能导致抗蚀剂环内的交联或聚合。