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    투명 알루미늄옥사이드 필름의 증착에 의한 ＯＬＥＤ 장치의 캡슐화에 사용되는 원자층 증착（ＡＬＤ）용 반응기
    1.
    发明公开
    투명 알루미늄옥사이드 필름의 증착에 의한 ＯＬＥＤ 장치의 캡슐화에 사용되는 원자층 증착（ＡＬＤ）용 반응기 审中-实审
    原子层沉积反应器（ALD），通过沉积透明氧化铝膜来应用于OLED器件的封装

    公开(公告)号：KR1020130119868A

    公开(公告)日：2013-11-01

    申请号：KR1020130042915

    申请日：2013-04-18

    Applicant: 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈

    Inventor： 맹드롱토니

    IPC: H01L51/56 ,  H05B33/10 ,  C23C16/44

    CPC classification number: H01L51/56 ,  C23C16/403 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/45544 ,  C23C16/45555 ,  C23C16/45591 ,  H01L51/5237 ,  H01L51/5253

    Abstract: The present invention relates to a reactor (1) for atomic layer deposition. The reactor includes: a reaction chamber (10) which includes a platen and is internally partitioned by surfaces; and at least one inlet orifice (11) and at least one outlet orifice (12) which are on the surfaces to partition the reaction chamber. The reaction chamber further includes at least one wall opened with at least one orifice. The opened wall is extended around the platen and over the most part of the height between the lower surface and the upper surface. At least one orifice which is formed on at least one side of the opened wall is not in contact with the inlet orifice to form chicanes in the flow of gaseous precursor from the inlet orifice (11) to the platen (100).

    Abstract translation: 本发明涉及一种用于原子层沉积的反应器（1）。 反应器包括：反应室（10），其包括压板并由表面内部分隔; 以及在表面上分隔反应室的至少一个入口孔（11）和至少一个出口孔（12）。 反应室还包括至少一个开有至少一个孔的壁。 打开的壁围绕压板延伸并且在下表面和上表面之间的大部分高度上延伸。 在开口壁的至少一侧上形成的至少一个孔口不与入口孔接触，以在气流前体从入口孔（11）流到压板（100）的流动中形成chicanes。

    인캡슐레이션 방법 및 관련 장치
    2.
    发明公开
    인캡슐레이션 방법 및 관련 장치 审中-实审
    封装过程和相关设备

    公开(公告)号：KR1020140116024A

    公开(公告)日：2014-10-01

    申请号：KR1020140033068

    申请日：2014-03-21

    Applicant: 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈

    Inventor： 맹드롱토니 ,  트록니콜라스

    IPC: H01L51/52

    CPC classification number: H01L21/56 ,  H01L27/3276 ,  H01L27/3288 ,  H01L29/66742 ,  H01L29/786 ,  H01L31/0203 ,  H01L31/18 ,  H01L51/0001 ,  H01L51/107 ,  H01L51/448 ,  H01L51/5203 ,  H01L51/5237 ,  H01L51/5253 ,  H01L51/56 ,  Y02E10/549 ,  Y02P70/521

    Abstract: The present invention relates to a method for encapsulating an electrical part (2). The electrical part (2) is connected to an electrical contact point track composed of a metal layer (101). The method of the present invention includes the steps of: directly depositing a titanium nitride layer (102) on at least a portion of the electrical contact point track (101); and depositing an aluminum oxide layer (4) by atomic layer deposition so as to make an encapsulation layer (4) directly cover the titanium nitride layer (102). According to the method of the present invention, an electrical contact point is provided through the encapsulation layer (4). In addition, the present invention relates to an electrical device obtained by using the method of the present invention.

    Abstract translation: 本发明涉及一种封装电气部件（2）的方法。 电气部分（2）连接到由金属层（101）组成的电接触点轨道。 本发明的方法包括以下步骤：在电触点轨道（101）的至少一部分上直接沉积氮化钛层（102）。 以及通过原子层沉积沉积氧化铝层（4），以使封装层（4）直接覆盖氮化钛层（102）。 根据本发明的方法，通过封装层（4）提供电接触点。 此外，本发明涉及使用本发明的方法获得的电子装置。

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