公开(公告)号：KR101691255B1

公开(公告)日：2016-12-29

申请号：KR1020140034555

申请日：2014-03-25

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 와무라유 ,  구와모토도모노리

IPC: H01L21/67 ,  C23C16/44 ,  C23C16/455

CPC classification number: C23C16/4401 ,  C23C16/45551 ,  C23C16/45572

Abstract: 원료가스인 Hf계가스를제1 처리가스노즐로부터웨이퍼 W측으로토출하는데 있어서, 당해제1 처리가스노즐의좌우양측에, 냉매통류로가각각둘러쳐진정류부재를각각배치한다. 그리고, 원료가스의액화온도보다도높고, 또한원료가스의열분해온도보다도낮은온도의냉매를냉매통류로에통류시킨다. 그리고, 정류부재를통해, 제1 처리가스노즐을냉각한다.

Abstract translation: 在从第一处理气体喷嘴排出源气体的过程中，在第一处理气体喷嘴的两侧布置有包括以其它方式设置的冷却剂流路的整流构件。 然后，在高于源气体的液化温度且低于源气体的热分解温度的温度下的冷却剂流过冷却剂流动通道，通过该冷却剂流动通道，第一处理气体喷嘴通过整流部件被冷却。

公开(公告)号：KR1020140118829A

公开(公告)日：2014-10-08

申请号：KR1020140034555

申请日：2014-03-25

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 와무라유 ,  구와모토도모노리

IPC: H01L21/67 ,  C23C16/44 ,  C23C16/455

CPC classification number: C23C16/4401 ,  C23C16/45551 ,  C23C16/45572 ,  H01L21/67011

Abstract: In discharging Hf based gas, which is raw material gas, to a wafer W from a first processing gas nozzle, each rectification member surrounded by a refrigerant through-flow pathway is respectively arranged in both sides of the first processing gas nozzle. The refrigerant of which the temperature is higher than that of liquefaction of the raw material gas and lower than that of pyrolysis of the raw material gas is flowed through the refrigerant through-flow pathway. The first processing gas nozzle is cooled through the rectification member.

Abstract translation: 在从第一处理气体喷嘴向晶片W排出作为原料气体的Hf基气体的同时，在第一处理气体喷嘴的两侧分别设置有由制冷剂贯流路径包围的各精馏部件。 其温度高于原料气体液化并低于原料气体热分解的制冷剂流过制冷剂通流通路。 第一处理气体喷嘴通过整流部件被冷却。