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公开(公告)号:KR1020120133146A
公开(公告)日:2012-12-10
申请号:KR1020110051668
申请日:2011-05-30
Applicant: 삼성전자주식회사 , 위니벨시떼 드 렌 1
CPC classification number: G02F1/05 , G02F1/19 , G02F1/21 , G02F2001/213 , G02F2201/501 , G02F1/03 , G02F1/0305 , G02F1/0311
Abstract: PURPOSE: An optical image shutter and a manufacturing method thereof are provided to improve yield by forming a holophotal thin film layer by using a transparent substrate. CONSTITUTION: A refractive index of a holophotal thin film layer(14) is changed by electric field. A holophotal thin film layer is formed between a first electrode and a second electrode(12,15). A conductivity preventing layer(13) is arranged in at least one region between the first electrode and the holophotal thin film layer and between the second electrode and the holophotal thin film. The conductivity preventing layer prevents current from flowing into the conductivity preventing layer. [Reference numerals] (AA) Light path; (BB,EE) Incidence; (CC,FF) Transmission; (DD) Stack direction
Abstract translation: 目的:提供一种光学图像快门及其制造方法,以通过使用透明基板形成凹凸薄膜层来提高产量。 构成:通过电场改变凹凸薄膜层(14)的折射率。 在第一电极和第二电极(12,15)之间形成一个顶点薄膜层。 导电性防止层(13)被布置在第一电极和环形薄膜层之间以及第二电极和孔结薄膜之间的至少一个区域中。 导电性防止层防止电流流入导电性防止层。 (标号)(AA)光路; (BB,EE)发病率; (CC,FF)传输; (DD)堆栈方向
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公开(公告)号:KR101912718B1
公开(公告)日:2018-10-29
申请号:KR1020110051668
申请日:2011-05-30
Applicant: 삼성전자주식회사 , 위니벨시떼 드 렌 1
CPC classification number: G02F1/05 , G02F1/19 , G02F1/21 , G02F2001/213 , G02F2201/501
Abstract: 광이미지셔터및 그제조방법을제공한다. 본광 이미지셔터는, 전기장에따라굴절율이변하는전광박막층, 전광박막층을사이에두고이격배치된제1 및제2 전극및 제1 전극과전광박막층의사이및 제2 전극과상기전광박막층의사이중 적어도하나의영역에배치되어전광박막층으로의전류유입을방지하는통전방지층를포함한다.
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