公开(公告)号：KR100306353B1

公开(公告)日：2001-09-13

申请号：KR1019997002922

申请日：1997-10-03

Applicant: 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드

Inventor： 다이난스티븐 ,  쉰들잭 ,  베이다존

IPC: C01B31/36

CPC classification number: C04B35/565 ,  C04B35/573 ,  C04B35/6263 ,  C04B35/63424 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/422 ,  C04B2235/425 ,  C04B2235/5409 ,  C04B2235/5427 ,  C04B2235/5436 ,  C04B2235/5472 ,  C04B2235/6027 ,  C04B2235/608 ,  C04B2235/61 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6581 ,  C04B2235/77 ,  C04B2235/96

Abstract: 본발명은, i) 입자크기가 10㎛미만인탄화규소미립자분획 40w/o 이상과 ii) 입자크기가 30㎛이상이고유리탄소가 0.10w/o 미만인탄화규소조립자분획 40w/o 이상을포함하고전체실리카함량이 0.5w/o 이상이며전체탄화규소함량이 96w/o 이상인원료분말배취를제공하는단계(a), 원료배취를미가공체(green body)로형성시키는단계(b) 및미가공체를재결정화하여, 밀도가 2.0 내지 2.8g/cc인재결정화된탄화규소를수득하는단계(c)를포함하는, 소결된무균열탄화규소체의제조방법에관한것이다.

公开(公告)号：KR1020000048896A

公开(公告)日：2000-07-25

申请号：KR1019997002922

申请日：1997-10-03

Applicant: 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드

Inventor： 다이난스티븐 ,  쉰들잭 ,  베이다존

IPC: C01B31/36

CPC classification number: C04B35/565 ,  C04B35/573 ,  C04B35/6263 ,  C04B35/63424 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/422 ,  C04B2235/425 ,  C04B2235/5409 ,  C04B2235/5427 ,  C04B2235/5436 ,  C04B2235/5472 ,  C04B2235/6027 ,  C04B2235/608 ,  C04B2235/61 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6581 ,  C04B2235/77 ,  C04B2235/96 ,  C01B32/956

Abstract: PURPOSE: A method for producing a crack-free sintered silicon carbide body is provided to prevent the problem of cracking during recrystallization in bimodal silicon carbide blends. CONSTITUTION: A method comprises the steps of: a) providing a raw powder batch comprising: i) at least 40 w/o fine grain fraction having a particle size of less than 10 microns, the fine grain fraction comprising silicon carbide; ii) at least 40 w/o coarse grain fraction having a particle size of at least 30 microns, the coarse grain fraction comprising silicon carbide and less than 0.10 w/o free carbon, the raw batch having a total silica content of at least 0.5 w/o, the raw batch having a total silicon carbide content of at least 96 w/o; b) forming the raw batch into a green body; and c) recrystallizing the green body to obtain a recrystallized silicon carbide body having a density of between 2.0 g/cc and 2.8 g/cc.

Abstract translation: 目的：提供一种生产无裂纹烧结碳化硅体的方法，以防止双峰碳化硅共混物在再结晶过程中产生裂纹的问题。 构成：一种方法包括以下步骤：a）提供原料粉末批料，其包括：i）至少40w / o粒度小于10微米的细晶粒部分，所述细晶粒部分包含碳化硅; ii）至少40w / o粒度为至少30微米的粗晶粒部分，粗晶粒部分包含碳化硅和小于0.10w / o游离碳，原料批次的总二氧化硅含量为至少0.5 原始批料的总碳化硅含量至少为96w / o; b）将原料成型为生坯; c）使生坯再结晶，得到密度为2.0g / cc〜2.8g / cc的再结晶碳化硅体。