公开(公告)号：US07309640B2

公开(公告)日：2007-12-18

申请号：US11110359

申请日：2005-04-20

Applicant: Alexandre Martin ,  Davy Villanueva ,  Frédéric Salvetti

Inventor： Alexandre Martin ,  Davy Villanueva ,  Frédéric Salvetti

IPC: H01L21/76

CPC classification number: H01L21/764

Abstract: A method is provided for fabricating an integrated circuit. According to the method, hollow isolating trenches are produced within a substrate, and active components are produced in and on active areas of the substrate that are between the trenches. The trenches are produced in an initial phase carried out before production of the active components and a final phase carried out after production of the active components. In the initial phase, trenches are formed in the substrate, and the trenches are filled with a fill material. In the final phase, the active components are encapsulated, accesses are created through the encapsulation material to each filled trench, the fill material is removed through each access, and the opening of each trench is plugged through the corresponding access. Also provided is an integrated that includes hollow isolating trenches within a substrate.

Abstract translation: 提供了一种用于制造集成电路的方法。 根据该方法，在衬底内产生中空隔离沟槽，并且在沟槽之间的衬底的有源区域中和其上产生有源元件。 沟槽在生产活性组分之前进行的初始阶段产生，并且在生产活性组分后进行最后阶段。 在初始阶段，在衬底中形成沟槽，并且用填充材料填充沟槽。 在最后阶段，活性组分被封装，通过封装材料产生对每个填充的沟槽的访问，通过每个进入去除填充材料，并且每个沟槽的开口通过相应的访问被堵塞。 还提供了一种集成的，其包括衬底内的中空隔离沟槽。

公开(公告)号：US20050245043A1

公开(公告)日：2005-11-03

申请号：US11110359

申请日：2005-04-20

Applicant: Alexandre Martin ,  Davy Villanueva ,  Frederic Salvetti

Inventor： Alexandre Martin ,  Davy Villanueva ,  Frederic Salvetti

IPC: H01L21/76 ,  H01L21/764 ,  H01L21/8234 ,  H01L27/08 ,  H01L27/088

CPC classification number: H01L21/764

Abstract: A method is provided for fabricating an integrated circuit. According to the method, hollow isolating trenches are produced within a substrate, and active components are produced in and on active areas of the substrate that are between the trenches. The trenches are produced in an initial phase carried out before production of the active components and a final phase carried out after production of the active components. In the initial phase, trenches are formed in the substrate, and the trenches are filled with a fill material. In the final phase, the active components are encapsulated, accesses are created through the encapsulation material to each filled trench, the fill material is removed through each access, and the opening of each trench is plugged through the corresponding access. Also provided is an integrated that includes hollow isolating trenches within a substrate.

Abstract translation: 提供了一种用于制造集成电路的方法。 根据该方法，在衬底内产生中空隔离沟槽，并且在沟槽之间的衬底的有源区域中和其上产生有源元件。 沟槽在生产活性组分之前进行的初始阶段产生，并且在生产活性组分后进行最后阶段。 在初始阶段，在衬底中形成沟槽，并且用填充材料填充沟槽。 在最后阶段，活性组分被封装，通过封装材料产生对每个填充的沟槽的访问，通过每个进入去除填充材料，并且每个沟槽的开口通过相应的访问被堵塞。 还提供了一种集成的，其包括衬底内的中空隔离沟槽。