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1.发明申请METHOD FOR PRODUCING A MONOCRYSTALLINE SI WAFER HAVING AN APPROXIMATELY POLYGONAL CROSS-SECTION AND CORRESPONDING MONOCRYSTALLINE SI WAFER 有权用于生产具有近似多边形横截面和相关单晶硅波长的单晶硅波长的方法公开(公告)号：US20090068407A1
公开(公告)日：2009-03-12
申请号：US11910683
申请日：2006-04-04
IPC分类号： B32B3/30 , H01L21/304
CPC分类号： C30B13/30 , C30B13/20 , C30B29/06 , Y10T428/24479
摘要： A method of making a single-crystalline Si wafer with an approximately polygonal cross section and having a material property that is the same as a zone-pulled Si crystal, and the single-crystalline Si wafer. The method includes pulling at least one bottle neck of a crystal vertically downwards from a rotating hanging melt drop. The rotational speed of the crystal is reduced to between 0 and less than 1 rpm. In a crystal-growth phase, a Si single crystal ingot is pulled vertically downwards with an approximately polygonal cross section. An inductor is used to generate a temperature profile at a growth phase boundary of the crystal that corresponds to the shape of a cross section of the pulled Si single crystal ingot. The growth is ended at a desired pulling length and the Si single crystal ingot is cut into wafers having an approximately polygonal cross section.
摘要翻译： 制造具有大致多边形横截面且具有与区域拉伸的Si晶体相同的材料性质的单晶Si晶片和单晶Si晶片的方法。 该方法包括从旋转的悬挂熔滴垂直向下拉动晶体的至少一个瓶颈。 晶体的旋转速度降低到0至小于1rpm。 在晶体生长阶段，Si单晶锭以大致多边形横截面垂直向下拉。 使用电感器在与拉出的Si单晶锭的截面形状相对应的晶体的生长相界面处产生温度分布。 生长以期望的拉伸长度结束，并且将Si单晶锭切割成具有大致多边形横截面的晶片。
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2.发明授权Method for producing a monocrystalline Si wafer having an approximately polygonal cross-section and corresponding monocrystalline Si wafer 有权用于制造具有近似多边形横截面的单晶硅晶片和相应的单晶Si晶片的方法公开(公告)号：US08337615B2
公开(公告)日：2012-12-25
申请号：US11910683
申请日：2006-04-04
CPC分类号： C30B13/30 , C30B13/20 , C30B29/06 , Y10T428/24479
摘要： A method of making a single-crystalline Si wafer with an approximately polygonal cross section and having a material property that is the same as a zone-pulled Si crystal, and the single-crystalline Si wafer. The method includes pulling at least one bottle neck of a crystal vertically downwards from a rotating hanging melt drop. The rotational speed of the crystal is reduced to between 0 and less than 1 rpm. In a crystal-growth phase, a Si single crystal ingot is pulled vertically downwards with an approximately polygonal cross section. An inductor is used to generate a temperature profile at a growth phase boundary of the crystal that corresponds to the shape of a cross section of the pulled Si single crystal ingot. The growth is ended at a desired pulling length and the Si single crystal ingot is cut into wafers having an approximately polygonal cross section.
摘要翻译： 制造具有近似多边形横截面且具有与区域拉伸的Si晶体相同的材料性质的单晶Si晶片和单晶Si晶片的方法。 该方法包括从旋转的悬挂熔滴垂直向下拉动晶体的至少一个瓶颈。 晶体的旋转速度降低到0至小于1rpm。 在晶体生长阶段，Si单晶锭以大致多边形横截面垂直向下拉。 使用电感器在与拉出的Si单晶锭的截面形状相对应的晶体的生长相界面处产生温度分布。 生长以期望的拉伸长度结束，并且将Si单晶锭切割成具有大致多边形横截面的晶片。
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3.发明申请Device For Producing A Single Crystal Composed Of Silicon By Remelting Granules 审中-公开通过重熔颗粒制造由硅组成的单晶的装置公开(公告)号：US20110095018A1
公开(公告)日：2011-04-28
申请号：US12910906
申请日：2010-10-25
IPC分类号： H05B6/10
摘要： A device for producing a silicon single crystal by remelting granules has a rotating plate of silicon having a central opening and having a silicon tubular extension which encloses the opening and extends below the plate; a first induction heating coil above the plate for melting granules; and a second induction heating coil below the plate for crystallizing the molten granules, wherein the second induction heating coil has, on its side lying opposite the silicon plate, a lower layer composed of a magnetically permeable material and an upper layer in which there is at least one cooling channel for conducting a coolant.
摘要翻译： 通过重熔颗粒制造硅单晶的装置具有一个具有中心开口的硅旋转板，并具有一个包围该开口并延伸到板下方的硅管延伸部; 板上方的第一感应加热线圈用于熔化颗粒; 以及在所述板下面的用于使所述熔融颗粒结晶的第二感应加热线圈，其中所述第二感应加热线圈在与所述硅板相对的一侧上具有由导磁材料和上层组成的下层， 至少一个用于传导冷却剂的冷却通道。
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