公开(公告)号：US06961553B2

公开(公告)日：2005-11-01

申请号：US10412462

申请日：2003-04-11

申请人： Lei Zhao ,  Anthony Pavio

发明人： Lei Zhao ,  Anthony Pavio

IPC分类号： H03F3/14 ,  H03F3/60 ,  H03G3/10 ,  H04B20060101 ,  H04B1/04 ,  H04B1/10 ,  H04B1/38 ,  H04M1/00 ,  H04M9/00

CPC分类号： H04B1/0483 ,  H03F3/607

摘要： A bidirectional amplifier circuit includes first and second input ports, first and second output ports, a power amplifier, and first, second, third, and fourth filter circuits. The power amplifier includes at least first and second input terminals and first and second output terminals. The first filter circuit is coupled between the first input port and the power amplifier first input terminal. The second filter circuit is coupled between the second input port and the power amplifier second input terminal. The third filter circuit is coupled between the first output port and the power amplifier first output terminal. The fourth filter circuit is coupled between the second output port and the power amplifier second output terminal. Carrier waves of differing frequencies may be injected into the amplifier circuit first and second input ports, and transmitted from the first and second output ports. The configuration provides broadband operation with flat gain and high efficiency at the frequencies of each of the carrier waves.

摘要翻译： 双向放大器电路包括第一和第二输入端口，第一和第二输出端口，功率放大器以及第一，第二，第三和第四滤波器电路。 功率放大器至少包括第一和第二输入端以及第一和第二输出端。 第一滤波器电路耦合在第一输入端口和功率放大器第一输入端子之间。 第二滤波器电路耦合在第二输入端口和功率放大器第二输入端子之间。 第三滤波电路耦合在第一输出端口和功率放大器第一输出端子之间。 第四滤波器电路耦合在第二输出端口和功率放大器第二输出端子之间。 可以将不同频率的载波注入放大器电路的第一和第二输入端口，并从第一和第二输出端口发送。 该配置在每个载波的频率处提供具有平坦增益和高效率的宽带操作。

公开(公告)号：US20060027385A1

公开(公告)日：2006-02-09

申请号：US11237056

申请日：2005-09-28

申请人： John Estes ,  Rodolfo Lucero ,  Anthony Pavio

发明人： John Estes ,  Rodolfo Lucero ,  Anthony Pavio

IPC分类号： H01J15/00 ,  H05K3/30

CPC分类号： H03H9/0557 ,  H01P1/203 ,  H03H9/02913 ,  H05K1/0218 ,  H05K1/0237 ,  H05K1/0243 ,  H05K1/16 ,  H05K1/181 ,  H05K1/185 ,  H05K2201/09618 ,  H05K2201/09972 ,  H05K2201/10371 ,  Y10T29/4913 ,  Y10T29/49137 ,  Y10T29/49146 ,  Y10T29/49165 ,  Y10T29/53174 ,  Y10T29/53178

摘要： An exemplary system and method for providing differential adjustment of the height of a multilayer substrate in localized areas for improved Q-factor performance of RF devices is disclosed as comprising inter alia: a multilayer substrate (200); an RF component (210) embedded in the substrate (200); a surface mounted component (220); and an RF shield (260) disposed next to the surface mounted component (220), wherein the height of the shield (260) does not extend substantially beyond the height of the surface mounted component (220). Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize Q, RF performance and/or material characteristics. Exemplary embodiments of the present invention representatively provide for high-performance, high-quality RF devices that may be readily incorporated with existing technologies for the improvement of frequency response, device package form factors, weights and/or other manufacturing, device or material performance metrics.

摘要翻译： 公开了一种用于在局部区域中对多层基板的高度进行差分调整以提高RF器件的Q因子性能的示例性系统和方法，其特别包括：多层衬底（200）; 嵌入在所述基板（200）中的RF部件（210）; 表面安装部件（220）; 以及靠近所述表面安装部件（220）设置的RF屏蔽件（260），其中所述屏蔽件（260）的高度基本上不超过所述表面安装部件（220）的高度。 公开的特征和规范可以被不同地控制，配置，适配或以其他方式任意地修改，以进一步改善或者优化Q，RF性能和/或材料特性。 本发明的示例性实施例代表性地提供了可以容易地与用于改进频率响应，设备包装形状因子，重量和/或其他制造，设备或材料性能度量的现有技术结合的高性能，高质量的RF设备 。