公开(公告)号：US20120264057A1

公开(公告)日：2012-10-18

申请号：US13534961

申请日：2012-06-27

Applicant: Chien-Wei Wang ,  Ching-Yu Chang ,  Tsai-Sheng Gau ,  Burn Jen Lin

Inventor： Chien-Wei Wang ,  Ching-Yu Chang ,  Tsai-Sheng Gau ,  Burn Jen Lin

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/027

CPC classification number: G03F7/0045 ,  Y10S430/106 ,  Y10S430/114 ,  Y10S430/12 ,  Y10S430/128

Abstract: A resist material and methods using the resist material are disclosed herein. An exemplary method includes forming a resist layer over a substrate, wherein the resist layer includes a polymer, a photoacid generator, an electron acceptor, and a photodegradable base; performing an exposure process that exposes portions of the resist layer with radiation, wherein the photodegradable base is depleted in the exposed portions of the resist layer during the exposure process; and performing an developing process on the resist layer.

Abstract translation: 本文公开了抗蚀剂材料和使用抗蚀剂材料的方法。 一种示例性方法包括在衬底上形成抗蚀剂层，其中抗蚀剂层包括聚合物，光致酸产生剂，电子受体和可光降解的碱; 执行曝光处理，其用辐射曝光抗蚀剂层的一部分，其中光可降解碱在曝光过程中耗尽抗蚀剂层的曝光部分; 并对抗蚀剂层进行显影处理。