Inorganic electroluminescent diode and method of fabricating the same
    1.
    发明授权
    Inorganic electroluminescent diode and method of fabricating the same 有权
    无机电致发光二极管及其制造方法

    公开(公告)号:US08017952B2

    公开(公告)日:2011-09-13

    申请号:US11534867

    申请日:2006-09-25

    IPC分类号: H01L27/15

    摘要: Disclosed are an inorganic electroluminescent diode and a method of fabricating the same. Specifically, this invention provides an inorganic electroluminescent diode, which includes a semiconductor nanocrystal layer formed of inorganic material, an electron transport layer or a hole transport layer formed on the semiconductor nanocrystal layer using amorphous inorganic material, and a hole transport layer or an electron transport layer formed beneath the semiconductor nanocrystal layer using inorganic material, and also provides a method of fabricating such an inorganic electroluminescent diode. According to the method of fabricating the inorganic electroluminescent diode of this invention, an inorganic electroluminescent diode can be fabricated while maintaining the properties of luminescent semiconductor material of the semiconductor crystal layer, and also an inorganic electroluminescent diode which is stably operated and has high luminescent efficiency can be provided.

    摘要翻译: 公开了一种无机电致发光二极管及其制造方法。 具体地说,本发明提供了一种无机电致发光二极管,其包括由无机材料形成的半导体纳米晶层,使用无定形无机材料形成在半导体纳米晶层上的电子传输层或空穴传输层,以及空穴传输层或电子传输 使用无机材料形成在半导体纳米晶层之下的层,并且还提供制造这种无机电致发光二极管的方法。 根据制造本发明的无机电致发光二极管的方法,可以制造无机电致发光二极管,同时保持半导体晶体层的发光半导体材料的性质,以及稳定操作且具有高发光效率的无机电致发光二极管 可以提供。