公开(公告)号：US20240363813A1

公开(公告)日：2024-10-31

申请号：US18766710

申请日：2024-07-09

申请人： BOE Technology Group Co., Ltd.

发明人： Xuefei SUN ,  Tingting ZHOU ,  Qian JIA ,  Yingtao WANG ,  Haokun LI ,  Xinxing WANG ,  Jaegeon YOU

IPC分类号： H01L33/58 ,  H01L25/16 ,  H01L33/06

CPC分类号： H01L33/58 ,  H01L25/167 ,  H01L33/06

摘要： Provided in the present disclosure are a light-emitting substrate and a display apparatus. The light-emitting substrate includes: a driving backplane; a plurality of light-emitting chips, arranged on the driving backplane in an array, where the light-emitting chip includes a buffer layer, an N-type semiconductor layer, a multi-quantum well layer, and a P-type semiconductor layer sequentially arranged on the driving backplane in a stacked manner; and a grating structure, on a side of the plurality of light-emitting chips facing away from the driving backplane, where the grating structure has a plurality of regions, and the regions are configured to transmit light of different wavelength bands.

公开(公告)号：US20240363807A1

公开(公告)日：2024-10-31

申请号：US18764641

申请日：2024-07-05

申请人： NICHIA CORPORATION

发明人： Kosuke SATO ,  Keiji EMURA

IPC分类号： H01L33/38 ,  H01L33/06

CPC分类号： H01L33/387 ,  H01L33/06 ,  H01L33/38

摘要： A light emitting element includes: a semiconductor structure; first and second electrodes formed above the semiconductor structure. In a plan view: the first electrode consists of a first pad electrode configured to be bonded with a first conductive wire and electrically connected to a first external electrode or a first external terminal, a first extending portion extending from the first pad electrode, and two second extending portions extending from the first pad electrode, the second electrode consists of a second pad electrode configured to be bonded with a second conductive wire and electrically connected to a second external electrode or a second external terminal, and two third extending portions extending from the second pad electrode.

公开(公告)号：US20240363585A1

公开(公告)日：2024-10-31

申请号：US18768802

申请日：2024-07-10

申请人： VueReal Inc.

发明人： Gholamreza Chaji

IPC分类号： H01L23/00 ,  H01L21/66 ,  H01L21/683 ,  H01L25/075 ,  H01L33/00 ,  H01L33/06 ,  H01L33/08 ,  H01L33/12 ,  H01L33/62 ,  H05K13/04

CPC分类号： H01L24/97 ,  H01L21/6835 ,  H01L22/20 ,  H01L24/80 ,  H01L24/95 ,  H01L33/0093 ,  H01L33/08 ,  H01L33/12 ,  H01L33/62 ,  H05K13/046 ,  H01L22/14 ,  H01L25/0753 ,  H01L33/0095 ,  H01L33/06 ,  H01L2221/68309 ,  H01L2221/68322 ,  H01L2221/68354 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/80006 ,  H01L2224/80132 ,  H01L2224/95001

摘要： This invention relates to integrating pixelated micro-devices into a system substrate. Defined are methods of transferring a plurality of micro-devices into a receiver substrate where a plurality of micro-devices is arranged in one or more cartridges that are aligned and bonded to a template. Further, defining the transfer process, the micro-devices may be selected, identified as defective and a transfer adjustment made based on defective micro-devices.

公开(公告)号：US12132145B2

公开(公告)日：2024-10-29

申请号：US17358814

申请日：2021-06-25

申请人： NICHIA CORPORATION

发明人： Tomoya Yamashita

IPC分类号： H01L33/04 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

CPC分类号： H01L33/04 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

摘要： A method of manufacturing a nitride semiconductor light-emitting element includes: growing an n-side superlattice layer that includes InGaN layers and GaN layers; and, after the step of growing the n-side superlattice layer, growing a light-emitting layer. The step of growing the n-side superlattice layer comprises repeating a cycle n times (n is a number of repetition), the cycle including growing one InGaN layer and growing one GaN layer. In the step of growing the n-side superlattice layer, the step of growing one GaN layer in each cycle from a first cycle to an mth cycle is performed using carrier gas that contains N2 gas and does not contain H2 gas. The step of growing one GaN layer in each cycle from a (m+1)th cycle to an nth cycle is performed using gas containing H2 gas as the carrier gas.

公开(公告)号：US12119372B2

公开(公告)日：2024-10-15

申请号：US18166985

申请日：2023-02-09

申请人： Samsung Display Co., LTD.

发明人： Dae Hyun Kim ,  Jong Hyuk Kang ,  Joo Yeol Lee ,  Hyun Deok Im ,  Hyun Min Cho

IPC分类号： H01L33/38 ,  H01L25/075 ,  H01L25/16 ,  H01L27/12 ,  H01L27/15 ,  H01L29/786 ,  H01L33/20 ,  H01L33/44 ,  H01L33/60 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01L33/62

CPC分类号： H01L27/156 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/78633 ,  H01L33/20 ,  H01L33/385 ,  H01L33/387 ,  H01L33/44 ,  H01L33/60 ,  H01L33/06 ,  H01L33/32 ,  H01L33/405 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0058 ,  H01L2933/0066

摘要： A light emitting device, includes: a substrate; a light emitting element on the substrate, the light emitting element having a first end portion and a second end portion arranged in a longitudinal direction; one or more partition walls disposed on the substrate, the one or more partition walls being spaced apart from the light emitting element; a first reflection electrode adjacent the first end portion of the light emitting element; a second reflection electrode adjacent the second end portion of the light emitting element; a first contact electrode connected to the first reflection electrode and the first end portion of the light emitting element; an insulating layer on the first contact electrode, the insulating layer having an opening exposing the second end portion of the light emitting element and the second reflection electrode to the outside; and a second contact electrode on the insulating layer.

公开(公告)号：US12116518B2

公开(公告)日：2024-10-15

申请号：US18384521

申请日：2023-10-27

申请人： TECTUS CORPORATION

发明人： Lianhua Qu ,  Hunaid Nulwala

IPC分类号： C09K11/88 ,  C09K11/00 ,  C09K11/02 ,  C09K11/62 ,  C09K11/64 ,  H01L33/00 ,  H01L33/06 ,  H01L33/24 ,  H01L33/50

CPC分类号： C09K11/883 ,  C09K11/00 ,  C09K11/025 ,  C09K11/623 ,  C09K11/642 ,  H01L33/00 ,  H01L33/06 ,  H01L33/24 ,  H01L33/502

摘要： Quantum dots that are cadmium-free and/or stoichiometrically tuned are disclosed, as are methods of making them. Inclusion of the quantum dots and others in a stabilizing polymer matrix is also disclosed. The polymers are chosen for their strong binding affinity to the outer layers of the quantum dots such that the bond dissociation energy between the polymer material and the quantum dot is greater than the energy required to reach the melt temperature of the cross-linked polymer.

公开(公告)号：US12113148B2

公开(公告)日：2024-10-08

申请号：US18358534

申请日：2023-07-25

申请人： National University Corporation Tokai National Higher Education and Research System ,  OSAKA UNIVERSITY ,  NICHIA CORPORATION

发明人： Tsukasa Torimoto ,  Tatsuya Kameyama ,  Yuki Mori ,  Hiroki Yamauchi ,  Susumu Kuwabata ,  Taro Uematsu ,  Daisuke Oyamatsu

IPC分类号： H01L33/00 ,  B82Y15/00 ,  B82Y40/00 ,  H01L33/06

CPC分类号： H01L33/06 ,  B82Y15/00 ,  B82Y40/00 ,  H01L33/0095 ,  H01L2933/0033

摘要： Provided is a method for manufacturing a semiconductor nanoparticle, the method includes performing a heat treatment of a first mixture containing a silver (Ag) salt, an alkali metal salt, a salt containing at least one of indium (In) and gallium (Ga), a sulfur source, and an organic solvent. A ratio of the number of atoms of an alkali metal to the total number of atoms of Ag and the alkali metal in the first mixture is greater than 0 and less than 1.

公开(公告)号：US12095001B2

公开(公告)日：2024-09-17

申请号：US17228225

申请日：2021-04-12

申请人： SEOUL VIOSYS CO., LTD.

发明人： Yong Hyun Baek ,  Ji Hun Kang ,  Chae Hon Kim ,  Ji Hoon Park

IPC分类号： H01L33/06 ,  H01L27/15 ,  H01L33/24 ,  H01L33/32 ,  H01L33/58 ,  H01L33/62

CPC分类号： H01L33/06 ,  H01L27/156 ,  H01L33/24 ,  H01L33/32 ,  H01L33/58 ,  H01L33/62

摘要： A light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The active layer has a single structure of a multi-quantum well in which a plurality of barrier layers and a plurality of well layers are stacked, and the active layer emits white light.

公开(公告)号：US20240297271A1

公开(公告)日：2024-09-05

申请号：US18383125

申请日：2023-10-24

申请人： HUAIAN AUCKSUN OPTOELECTRONICS TECHNOLOGY CO., LTD

发明人： Tao Zhu ,  Changwei Song ,  Ling Lu

IPC分类号： H01L33/32 ,  H01L33/00 ,  H01L33/02 ,  H01L33/06

CPC分类号： H01L33/325 ,  H01L33/007 ,  H01L33/025 ,  H01L33/06

摘要： A light emitting diode epitaxial structure and a light emitting diode are provided. The light emitting diode epitaxial structure includes a substrate, and an N-type semiconductor layer, an intermediate layer, a multi-quantum well layer and a P-type semiconductor layer which are sequentially arranged on the substrate, wherein the intermediate layer is doped with a n-type impurity, and a doping concentration of the n-type impurity is ≤4×1018 atoms/cm3. In a specific implementation of the present disclosure, the n-type impurity is Si, and the intermediate layer is a GaN layer doped with Si.

公开(公告)号：US20240297270A1

公开(公告)日：2024-09-05

申请号：US18280974

申请日：2022-03-16

申请人： Lumileds LLC

发明人： Robert Armitage

IPC分类号： H01L33/32 ,  H01L33/06

CPC分类号： H01L33/325 ,  H01L33/06

摘要： Described are light emitting diode (LED) devices including a quantum well on a superlattice structure. The LED device has a dominant wavelength greater than 520 nm. The dominant wavelength changes less than 7 nm when the current density increases from 10 A/cm2 to 100 A/cm2 and a junction temperature of the device changes less than 20° C.