公开(公告)号：US12100936B2

公开(公告)日：2024-09-24

申请号：US17767293

申请日：2020-10-08

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： Toshiyuki Takizawa

IPC分类号： H01L33/00 ,  H01L21/02 ,  H01L33/18 ,  H01S5/327

CPC分类号： H01S5/327 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02516 ,  H01L21/02521 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/002 ,  H01L33/005 ,  H01L33/18 ,  H01L21/02488 ,  H01L21/02502

摘要： A nitride semiconductor structure includes a Group III nitride semiconductor portion and a Group II-IV nitride semiconductor portion. The Group III nitride semiconductor portion is single crystalline. The Group III nitride semiconductor portion has a predetermined crystallographic plane. The Group II-IV nitride semiconductor portion is provided on the predetermined crystallographic plane of the Group III nitride semiconductor portion. The Group II-IV nitride semiconductor portion is single crystalline. The Group II-IV nitride semiconductor portion contains a Group II element and a Group IV element. The Group II-IV nitride semiconductor portion forms a heterojunction with the Group III nitride semiconductor portion. The predetermined crystallographic plane is a crystallographic plane other than a (0001) plane.

公开(公告)号：US12065601B2

公开(公告)日：2024-08-20

申请号：US17431356

申请日：2020-02-18

申请人： TECHNISCHE UNIVERSITEIT EINDHOVEN

发明人： Silvana Botti ,  Friedhelm Bechstedt ,  Jozef Everardus Maria Haverkort ,  Erik Petrus Antonius Maria Bakkers ,  Elham Fadaly ,  Alain Dijkstra

IPC分类号： C09K11/66 ,  B82Y20/00 ,  C01B33/06 ,  H01L31/028 ,  H01L31/036 ,  H01L33/18 ,  H01L33/34 ,  H01S5/34

CPC分类号： C09K11/666 ,  C01B33/06 ,  B82Y20/00 ,  C01P2002/76 ,  C01P2004/03 ,  H01L31/028 ,  H01L31/036 ,  H01L33/18 ,  H01L33/34 ,  H01S5/3427

摘要： The invention relates to a light-emitting component comprising a light-emitting section consisting of a Hex-Si1−xGex compound material, said Hex-Si1−xGex compound material having a direct band gap for emitting light.
The invention also pertains to a light-absorbing component comprising a light-absorbing section consisting of a Hex-S1−xGex compound material, said Hex-Si1−xGex compound material having a direct band gap for absorbing light.

公开(公告)号：US11947249B2

公开(公告)日：2024-04-02

申请号：US17481564

申请日：2021-09-22

申请人： Seiko Epson Corporation

发明人： Takafumi Noda ,  Hideki Hahiro ,  Tetsuji Fujita ,  Atsushi Ito ,  Koichiro Akasaka ,  Yasutaka Imai ,  Michifumi Nagawa

IPC分类号： G03B21/20 ,  H01L33/00 ,  H01L33/10 ,  H01L33/18 ,  H01L33/24

CPC分类号： G03B21/2033 ,  H01L33/0025 ,  H01L33/10 ,  H01L33/18 ,  H01L33/24 ,  H01L33/0075

摘要： A light emitting apparatus according to the present disclosure includes a first layer made of a semiconductor monocrystal, a second layer provided at the first layer and having a crystal orientation not continuous with the crystal orientation of the first layer, and a columnar crystal structure including a light emitting layer and extending from the second layer.

公开(公告)号：US20240079387A1

公开(公告)日：2024-03-07

申请号：US18273739

申请日：2022-06-02

申请人： LG ELECTRONICS INC.

发明人： Myungwhun CHANG ,  Yanghyun KIM ,  Seungho RYOO ,  Jonghwa WON ,  Donghyun KIM ,  Jonggon SHIN ,  Kimun PAIK

IPC分类号： H01L25/075 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L33/62

CPC分类号： H01L25/0753 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L33/62

摘要： The present disclosure is applicable to a display device-related technical field and relates to, for example, a display device using a micro light-emitting diode (LED). The present disclosure as such comprises: a wiring board on which a plurality of unit pixel regions are defined; a wiring electrode arranged on the wiring board, the wiring electrode comprising a first wiring electrode and a second wiring electrode; and a light-emitting element that forms a sub-pixel by being installed to be electrically connected to the first wiring electrode and the second wiring electrode in each of the unit pixel regions, wherein the light-emitting element may be configured to comprise: a first light-emitting element located in a first pixel region and installed in a first arrangement; and a second light-emitting element located in a second pixel region neighboring the first pixel region and installed in a second arrangement that is symmetrical to the first arrangement.

公开(公告)号：US20240072207A1

公开(公告)日：2024-02-29

申请号：US18500025

申请日：2023-11-01

申请人： Silanna UV Technologies Pte Ltd

发明人： Petar Atanackovic

IPC分类号： H01L33/26 ,  H01L21/20 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/18 ,  H01L33/50

CPC分类号： H01L33/26 ,  H01L21/2011 ,  H01L33/0012 ,  H01L33/005 ,  H01L33/06 ,  H01L33/12 ,  H01L33/18 ,  H01L33/504 ,  H01L33/002

摘要： In some embodiments, an optoelectronic semiconductor light emitting device includes a single crystal LiF substrate and an optical emission region including an epitaxial oxide layer disposed on the substrate. The optical emission region can be configured to emit light having a wavelength in a range from 150 nm to 425 nm. In some embodiments, a semiconductor structure includes a single crystal LiF substrate and an epitaxial oxide layer disposed on the substrate, where the epitaxial layer includes MgxAl2(1−x)O3−2x or MgxGa2(1−x)O3−2x where 0≤x≤1, or a polar form of Ga2O3 with a hexagonal crystal symmetry.

公开(公告)号：US20240055560A1

公开(公告)日：2024-02-15

申请号：US18480334

申请日：2023-10-03

申请人： Silanna UV Technologies Pte Ltd

发明人： Petar Atanackovic

IPC分类号： H01L33/26 ,  H01L33/00 ,  H01L33/16 ,  H01L33/62 ,  H01L27/15 ,  H01L33/06 ,  H01L33/18 ,  H01L21/02 ,  H01L23/66 ,  H01L29/24 ,  H01L29/51 ,  H01L29/786 ,  H01L29/15 ,  H01S5/34 ,  H01L29/20 ,  H01L29/66 ,  H01L29/267

CPC分类号： H01L33/26 ,  H01L33/002 ,  H01L33/16 ,  H01L33/62 ,  H01L27/15 ,  H01L33/007 ,  H01L33/06 ,  H01L33/18 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/0228 ,  H01L23/66 ,  H01L29/24 ,  H01L29/517 ,  H01L29/7869 ,  H01L29/151 ,  H01S5/34 ,  H01L21/02458 ,  H01L21/02507 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/267 ,  H01L2223/6627 ,  H01L29/7786

摘要： The present disclosure provides techniques for epitaxial oxide materials, structures and devices. In some embodiments, an integrated circuit includes a field effect transistor (FET) and a waveguide coupled to the FET, wherein the waveguide comprises a signal conductor. The FET can include: a substrate comprising a first oxide material; an epitaxial semiconductor layer on the substrate, the epitaxial semiconductor layer comprising a second oxide material with a first bandgap; a gate layer on the epitaxial semiconductor layer, the gate layer comprising a third oxide material with a second bandgap, wherein the second bandgap is wider than the first bandgap; and electrical contacts. The electrical contacts can include: a source electrical contact coupled to the epitaxial semiconductor layer; a drain electrical contact coupled to the epitaxial semiconductor layer; and a first gate electrical contact coupled to the gate layer.

公开(公告)号：US20230369536A1

公开(公告)日：2023-11-16

申请号：US18101570

申请日：2023-01-25

申请人： The Royal Institution for the Advancement of Learning/McGill University

发明人： Zetian MI ,  Songrui ZHAO ,  Renjie WANG

IPC分类号： H01L33/06 ,  H01L33/08 ,  H01L33/32 ,  H01L33/00 ,  H01S5/10 ,  H01S5/323 ,  H01L33/18

CPC分类号： H01L33/06 ,  H01L33/08 ,  H01L33/32 ,  H01L33/007 ,  H01S5/1042 ,  H01S5/32341 ,  H01L33/18 ,  H01S5/021

摘要： GaN-based nanowire heterostructures have been intensively studied for applications in light emitting diodes (LEDs), lasers, solar cells and solar fuel devices. Surface charge properties play a dominant role on the device performance and have been addressed within the prior art by use of a relatively thick large bandgap AlGaN shell covering the surfaces of axial InGaN nanowire LED heterostructures has been explored and shown substantial promise in reducing surface recombination leading to improved carrier injection efficiency and output power. However, these lead to increased complexity in device design, growth and fabrication processes thereby reducing yield/performance and increasing costs for devices. Accordingly, there are taught self-organising InGaN/AlGaN core-shell quaternary nanowire heterostructures wherein the In-rich core and Al-rich shell spontaneously form during the growth process.

公开(公告)号：US11810996B2

公开(公告)日：2023-11-07

申请号：US17666346

申请日：2022-02-07

申请人： The Regents of the University of Michigan

发明人： Zetian Mi ,  Yong-Ho Ra ,  Renjie Wang

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L33/00 ,  H01L33/24 ,  H01L27/15 ,  H01L33/18 ,  H01L33/08 ,  H01L33/62 ,  H01L33/38 ,  H01L33/20

CPC分类号： H01L33/06 ,  H01L27/15 ,  H01L27/156 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L33/007 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2933/0016

摘要： InGaN/GaN quantum layer nanowire light emitting diodes are fabricated into a single cluster capable of exhibiting a wide spectral output range. The nanowires having InGaN/GaN quantum layers formed of quantum dots are tuned to different output wavelengths using different nanowire diameters, for example, to achieve a full spectral output range covering the entire visible spectrum for display applications. The entire cluster is formed using a monolithically integrated fabrication technique that employs a single-step selective area epitaxy growth.

公开(公告)号：US11804570B2

公开(公告)日：2023-10-31

申请号：US16044337

申请日：2018-07-24

申请人： THE REGENTS OF THE UNIVERSITY OF MICHIGAN

发明人： Zetian Mi ,  Yong-Ho Ra ,  Roksana Rashid ,  Xianhe Liu

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L33/00 ,  G02B6/122 ,  H01L33/18 ,  H01S5/343 ,  H01S5/34 ,  H01S5/11

CPC分类号： H01L33/06 ,  G02B6/1225 ,  H01L33/007 ,  H01L33/18 ,  H01L33/32 ,  H01S5/11 ,  H01S5/341 ,  H01S5/3412 ,  H01S5/34333

摘要： A nanowire can include a first semiconductor portion, a second portion including a quantum structure disposed on the first portion, and a second semiconductor portion disposed on the second portion opposite the first portion. The quantum structure can include one or more quantum core structures and a quantum core shell disposed about the one or more quantum core structures. The one or more quantum core structures can include one or more quantum disks, quantum arch-shaped forms, quantum wells, quantum dots within quantum wells or combinations thereof.

公开(公告)号：US20230238483A1

公开(公告)日：2023-07-27

申请号：US17896756

申请日：2022-08-26

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： Hideto SUGAWARA ,  Hiroaki OOTSUKA ,  Naoki MURAKAMI ,  Takanobu KAMAKURA

IPC分类号： H01L33/18 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/167 ,  H01L33/00 ,  H01L33/06 ,  H01L33/30 ,  H01L33/52 ,  H01L33/62

CPC分类号： H01L33/18 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/167 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/30 ,  H01L33/52 ,  H01L33/62

摘要： A semiconductor light-emitting device includes a GaAs (gallium arsenide) substrate of a cubic crystal, a light-emitting layer and a multi-semiconductor layer. The light-emitting layer being provided on the GaAs substrate. The light-emitting layer includes InGaAs (indium gallium arsenide) represented by a compositional formula InxGa1-xAs (0