公开(公告)号：US07846848B2

公开(公告)日：2010-12-07

申请号：US11532195

申请日：2006-09-15

Applicant: Richard Lewington ,  Corey Collard ,  Scott Anderson ,  Khiem Nguyen

Inventor： Richard Lewington ,  Corey Collard ,  Scott Anderson ,  Khiem Nguyen

IPC: H01L21/302

CPC classification number: G03F1/30 ,  H01L21/31116 ,  H01L21/67742

Abstract: The embodiments of the invention relate to a method and apparatus for measuring the etch depth in a semiconductor photomask processing system. In one embodiment, a method for etching a substrate includes etching a transparent substrate in an etch chamber coupled to a vacuum transfer chamber of a processing system, transferring the transparent substrate to a measurement cell coupled to the processing system, and measuring at least one of etch depth or critical dimension using a measurement tool in the measurement cell.

Abstract translation: 本发明的实施例涉及一种用于测量半导体光掩模处理系统中的蚀刻深度的方法和装置。 在一个实施例中，用于蚀刻衬底的方法包括在与处理系统的真空传送室耦合的蚀刻室中蚀刻透明衬底，将透明衬底转移到耦合到处理系统的测量单元，以及测量至少一个 蚀刻深度或临界尺寸，使用测量单元中的测量工具。

公开(公告)号：US20060154388A1

公开(公告)日：2006-07-13

申请号：US11031400

申请日：2005-01-08

Applicant: Richard Lewington ,  Corey Collard ,  Scott Anderson ,  Khiem Nguyen

Inventor： Richard Lewington ,  Corey Collard ,  Scott Anderson ,  Khiem Nguyen

IPC: H01L21/66 ,  C23C14/00

CPC classification number: G03F1/30 ,  H01L21/31116 ,  H01L21/67742

Abstract: The embodiments of the invention relate to a method and apparatus for measuring the etch depth between etching for an alternate phase shift photomask in a semiconductor photomask processing system. The apparatus for measuring the etch depth of a substrate in an etch processing system comprises a measurement cell coupled to a mainframe of the etch processing system, and an etch depth measurement tool coupled to the bottom of the measurement cell, wherein an opening at the bottom of the measurement cell allows light beams to pass between the etch depth measurement tool and the substrate. The embodiments of the invention also relate to the method of preparing an alternate phase shift mask by partially etching the quartz substrate to an initial etch depth, followed by measuring the etch depth with an integrated measurement tool. The substrate is then etched and measured repeatedly until the targeted etch depth has been reached.

Abstract translation: 本发明的实施例涉及一种用于测量半导体光掩模处理系统中的替代相移光掩模的蚀刻之间的蚀刻深度的方法和装置。 用于在蚀刻处理系统中测量衬底的蚀刻深度的装置包括耦合到蚀刻处理系统的主机的测量单元和耦合到测量单元的底部的蚀刻深度测量工具，其中底部的开口 的测量单元允许光束在蚀刻深度测量工具和衬底之间通过。 本发明的实施例还涉及通过将石英衬底部分蚀刻到初始蚀刻深度，然后用集成测量工具测量蚀刻深度来制备交替相移掩模的方法。 然后重复蚀刻和测量衬底，直到达到目标蚀刻深度。

公开(公告)号：US20070012660A1

公开(公告)日：2007-01-18

申请号：US11532195

申请日：2006-09-15

Applicant: Richard Lewington ,  Corey Collard ,  Scott Anderson ,  Khiem Nguyen

Inventor： Richard Lewington ,  Corey Collard ,  Scott Anderson ,  Khiem Nguyen

IPC: G01L21/30 ,  H01L21/306

CPC classification number: G03F1/30 ,  H01L21/31116 ,  H01L21/67742

Abstract: The embodiments of the invention relate to a method and apparatus for measuring the etch depth in a semiconductor photomask processing system. In one embodiment, a method for etching a substrate includes etching a transparent substrate in an etch chamber coupled to a vacuum transfer chamber of a processing system, transferring the transparent substrate to a measurement cell coupled to the processing system, and measuring at least one of etch depth or critical dimension using a measurement tool in the measurement cell.

Abstract translation: 本发明的实施例涉及一种用于测量半导体光掩模处理系统中的蚀刻深度的方法和装置。 在一个实施例中，用于蚀刻衬底的方法包括在与处理系统的真空传送室耦合的蚀刻室中蚀刻透明衬底，将透明衬底转移到耦合到处理系统的测量单元，以及测量至少一个 蚀刻深度或临界尺寸，使用测量单元中的测量工具。