公开(公告)号：US20060077221A1

公开(公告)日：2006-04-13

申请号：US11281090

申请日：2005-11-17

申请人： Karthik Vaideeswaran ,  Andrew McNees ,  John Krawczyk ,  James Mrvos ,  Cory Hammond ,  Mark Doerre ,  Jason Vanderpool ,  Girish Patil ,  Christopher Money ,  Gary Williams ,  Richard Warner

发明人： Karthik Vaideeswaran ,  Andrew McNees ,  John Krawczyk ,  James Mrvos ,  Cory Hammond ,  Mark Doerre ,  Jason Vanderpool ,  Girish Patil ,  Christopher Money ,  Gary Williams ,  Richard Warner

IPC分类号： B41J2/015

CPC分类号： B41J2/1632 ,  B41J2/14145 ,  B41J2/1603 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1645 ,  B41J2/1646

摘要： A method for improving fluidic flow for a microfluidic device having a through hole or slot therein. The method includes the steps of forming one or more openings through at least part of a thickness of a substrate from a first surface to an opposite second surface using a reactive ion etching process whereby an etch stop layer is applied to side wall surfaces in the one or more openings during alternating etching and passivating steps as the openings are etched through at least a portion of the substrate. Substantially all of the etch stop layer coating is removed from the side wall surfaces by treating the side wall surfaces using a method selected from chemical treatment and mechanical treatment, whereby a surface energy of the treated side wall surfaces is increased relative to a surface energy of the side wall surfaces containing the etch stop layer coating.

摘要翻译： 一种用于改善其中具有通孔或槽的微流体装置的流体流动的方法。 该方法包括以下步骤：使用反应离子蚀刻工艺从基板的第一表面至相对的第二表面形成穿过衬底的至少一部分厚度的一个或多个开口，由此将蚀刻停止层施加到一个侧壁表面 或者在交替蚀刻和钝化步骤期间，当开口被蚀刻通过衬底的至少一部分时，可以有更多的开口。 通过使用选自化学处理和机械处理的方法处理侧壁表面，从侧壁表面去除基本上所有的蚀刻停止层涂层，由此所处理的侧壁表面的表面能相对于 所述侧壁表面包含所述蚀刻停止层涂层。

公开(公告)号：US20050093912A1

公开(公告)日：2005-05-05

申请号：US10701225

申请日：2003-11-04

申请人： Karthik Vaideeswaran ,  Andrew McNees ,  John Krawczyk ,  James Mrvos ,  Cory Hammond ,  Mark Doerre ,  Jason Vanderpool ,  Girish Patil ,  Christopher Money ,  Gary Williams ,  Richard Warner

发明人： Karthik Vaideeswaran ,  Andrew McNees ,  John Krawczyk ,  James Mrvos ,  Cory Hammond ,  Mark Doerre ,  Jason Vanderpool ,  Girish Patil ,  Christopher Money ,  Gary Williams ,  Richard Warner

IPC分类号： B41J2/14 ,  B41J2/16 ,  B41J2/015

CPC分类号： B41J2/1632 ,  B41J2/14145 ,  B41J2/1603 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1645 ,  B41J2/1646

摘要： A method for improving fluidic flow for a microfluidic device having a through hole or slot therein. The method includes the steps of forming one or more openings through at least part of a thickness of a substrate from a first surface to an opposite second surface using a reactive ion etching process whereby an etch stop layer is applied to side wall surfaces in the one or more openings during alternating etching and passivating steps as the openings are etched through at least a portion of the substrate. Substantially all of the etch stop layer coating is removed from the side wall surfaces by treating the side wall surfaces using a method selected from chemical treatment and mechanical treatment, whereby a surface energy of the treated side wall surfaces is increased relative to a surface energy of the side wall surfaces containing the etch stop layer coating.

摘要翻译： 一种用于改善其中具有通孔或槽的微流体装置的流体流动的方法。 该方法包括以下步骤：使用反应离子蚀刻工艺从基板的第一表面至相对的第二表面形成穿过衬底的至少一部分厚度的一个或多个开口，由此将蚀刻停止层施加到一个侧壁表面 或者在交替蚀刻和钝化步骤期间，当开口被蚀刻通过衬底的至少一部分时，可以有更多的开口。 通过使用选自化学处理和机械处理的方法处理侧壁表面，从侧壁表面去除基本上所有的蚀刻停止层涂层，由此所处理的侧壁表面的表面能相对于 所述侧壁表面包含所述蚀刻停止层涂层。