公开(公告)号：US20060197602A1

公开(公告)日：2006-09-07

申请号：US11263116

申请日：2005-10-31

Applicant: Craig Rotay ,  John Pritiskutch ,  Richard Hildenbrandt

Inventor： Craig Rotay ,  John Pritiskutch ,  Richard Hildenbrandt

IPC: H03F1/52

CPC classification number: G01R31/2623 ,  G01R31/311 ,  H03F1/52 ,  H03F3/21 ,  H03F2200/447

Abstract: A semiconductor indicator for quantitatively diagnosing voltage conditions in high power transistor devices is provided. The semiconductor indicator includes a first transistor and a second transistor, where an electrically active periphery of the second transistor is less than an electrically active periphery of the first transistor. The transistors are thermally coupled to one another and may be in close proximity. The second transistor detects the voltage of a node on the first transistor and may be monitored by infrared imaging. The breakdown voltage characteristic of the second transistor may not substantially change as the temperature in the first transistor increases. An optional control circuit monitors and detects the output voltage of the first transistor.

Abstract translation: 提供了用于定量诊断大功率晶体管器件中的电压条件的半导体指示器。 半导体指示器包括第一晶体管和第二晶体管，其中第二晶体管的电活性周边小于第一晶体管的电活性周边。 晶体管彼此热耦合并且可以紧密接近。 第二晶体管检测第一晶体管上的节点的电压，并且可以通过红外成像来监测。 当第一晶体管的温度升高时，第二晶体管的击穿电压特性基本上不会改变。 可选的控制电路监视和检测第一晶体管的输出电压。

公开(公告)号：US20060255455A1

公开(公告)日：2006-11-16

申请号：US11263115

申请日：2005-10-31

Applicant: Craig Rotay

Inventor： Craig Rotay

IPC: H01L23/34

CPC classification number: H01L23/49562 ,  H01L2924/0002 ,  H01L2924/3011 ,  H05K3/3426 ,  H05K2201/10166 ,  H05K2201/10818 ,  H05K2201/1084 ,  Y02P70/613 ,  H01L2924/00

Abstract: A high power density transistor structure includes a transistor package capable of housing a high power density transistor. The transistor package has a package insulator and a plurality of transistor leads. Each of the transistor leads has a far end, a near end and a lead periphery. The high power density transistor structure also includes a solder lock located on at least one of the transistor leads. At least a portion of the solder lock is attachable to a printed circuit board (PCB). At least a portion of the lead periphery of each transistor lead is attachable to at least one of: the PCB and the package insulator.

Abstract translation: 高功率密度晶​​体管结构包括能够容纳高功率密度晶​​体管的晶体管封装。 晶体管封装具有封装绝缘体和多个晶体管引线。 每个晶体管引线具有远端，近端和引线周边。 高功率密度晶​​体管结构还包括位于至少一个晶体管引线上的焊接锁。 焊接锁的至少一部分可附接到印刷电路板（PCB）。 每个晶体管引线的引线周边的至少一部分可附接到PCB和封装绝缘体中的至少一个。