公开(公告)号：US4873205A

公开(公告)日：1989-10-10

申请号：US240421

申请日：1988-09-01

申请人： Dale L. Critchlow ,  John K. DeBrosse ,  Rick L. Mohler ,  Wendell P. Noble, Jr. ,  Paul C. Parries

发明人： Dale L. Critchlow ,  John K. DeBrosse ,  Rick L. Mohler ,  Wendell P. Noble, Jr. ,  Paul C. Parries

IPC分类号： H01L21/74 ,  H01L21/8242

CPC分类号： H01L27/10861 ,  H01L21/743 ,  Y10S148/025 ,  Y10S148/026

摘要： A method for forming a silicide bridge bewteen a diffusion region and an adjacent poly-filled trench separated by a thin dielectric. Silicon is selectively grown over exposed silicon regions under conditions that provide controlled lateral growth over the thin dielectric without also permitting lateral growth over other insulator regions. A refractory metal layer is then deposited and sintered under conditions that limit lateral silicide growth, forming the bridge. This process avoids the random fails produced by previous processes while enhancing the compatibility of bridge formation with shallow junctions, without introducing extra masking steps or other process complexities.

摘要翻译： 用于形成硅化物桥的方法是由薄电介质隔开的扩散区和相邻的多晶填充沟槽。 硅在暴露的硅区域选择性地生长，条件是在薄介电层上提供受控的横向生长，而不允许在其它绝缘体区域上的横向生长。 然后在限制侧向硅化物生长的条件下沉积和烧结难熔金属层，形成桥。 该过程避免了以前的过程产生的随机失败，同时增强了与浅结的桥形成的兼容性，而不引入额外的掩蔽步骤或其他过程复杂性。