公开(公告)号：US07326628B2

公开(公告)日：2008-02-05

申请号：US11181405

申请日：2005-07-13

申请人： Nadia Ben Mohamed ,  Nguyet-Phuong Nguyen ,  Takeshi Akatsu ,  Alice Boussagol ,  Gabriela Suciu

发明人： Nadia Ben Mohamed ,  Nguyet-Phuong Nguyen ,  Takeshi Akatsu ,  Alice Boussagol ,  Gabriela Suciu

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  H01L21/26506

摘要： A method for producing a semiconductor structure by conducting controlled co-implanting of at least first and second different atomic species into a donor substrate to create an embrittlement zone which defines a thin layer of donor material to be transferred. Implantation energies are selected so that the first and second species are respectively distributed in the donor wafer according to a repartition profile that presents a spreading zone in which each species is mainly distributed at a maximum concentration peak. The implantation doses and energies of the first and second species are selected such that the second species is implanted deeper in the embrittlement zone than the first species spreading zone. The donor substrate is detached at the embrittlement zone to transfer the thin layer to the support substrate while minimizing blister formation in and surface roughness of the transferred layer. Preferably, the implantation dose of the first species is between about 40 to 60 percent of all implantation doses. This method is preferably utilized for forming or producing SeOI (Semiconductor On Insulator) structures.

摘要翻译： 一种用于通过将至少第一和第二不同原子物质的受控共同植入进入施主衬底以产生限定待转移的施主材料的薄层的脆化区来制造半导体结构的方法。 选择植入能量，使得第一和第二物质分别分布在施主晶片中，根据重新分布分布，其呈现扩散区，其中每个物质主要以最大浓度峰分布。 选择第一种和第二种的植入剂量和能量，使得第二种类在脆化区中比第一物种扩散区更深地植入。 在脆化区分离施主衬底以将薄层转移到支撑衬底，同时最小化转移层的起泡和表面粗糙度。 优选地，第一种类的植入剂量是所有植入剂量的约40至60％。 该方法优选用于形成或制造SeOI（半导体绝缘体）结构。

公开(公告)号：US20060060943A1

公开(公告)日：2006-03-23

申请号：US11181405

申请日：2005-07-13

申请人： Nadia Ben Mohamed ,  Nguyet-Phuong Nguyen ,  Takeshi Akatsu ,  Alice Boussagol ,  Gabriela Suciu

发明人： Nadia Ben Mohamed ,  Nguyet-Phuong Nguyen ,  Takeshi Akatsu ,  Alice Boussagol ,  Gabriela Suciu

IPC分类号： H01L29/32 ,  H01L21/425

CPC分类号： H01L21/76254 ,  H01L21/26506

摘要： The invention relates to a method for producing a semiconductor structure which comprises conducting controlled co-implanting of at least first and second different atomic species into a face of donor substrate to create an embrittlement zone which defines a thin layer of donor material to be transferred. This step is conducted by selecting implantation energies so that the coimplanting is made under conditions such that the first and second species are respectively distributed in the donor wafer according to a repartition profile that presents a spreading zone in which each species is mainly distributed and at a maximum concentration peak. Also, the implantation doses and implantation energies of the first and second species are selected such that the second species is implanted deeper in the embrittlement zone than the first species spreading zone, with the first species selected to provide essentially chemical implantation to thus form platelet defects in the donor substrate, and with the second species selected to provide physical implantation to thus act as a source of internal pressure in the donor wafer to impart stress upon the platelet defects. Next, the face of the donor substrate is placed into contact with a support substrate, and then the donor substrate is detached at the embrittlement zone to transfer the thin layer to the support substrate while minimizing blister formation in and surface roughness of the transferred layer. Preferably, the implantation dose of the first species is between about 40 to 60 percent and generally about 50% of all implantation doses. This method is preferably utilized for forming or producing SeOI (Semiconductor On Insulator) structures.

摘要翻译： 本发明涉及一种用于制造半导体结构的方法，该方法包括将至少第一和第二不同原子物质的受控共同植入至施主衬底的表面，以产生限定待转移的施主材料薄层的脆化区。 该步骤是通过选择植入能量进行的，以便在使得第一和第二物质分别分布在施主晶片中的根据重新分配分布的条件下进行共同植入，其呈现每个物种主要分布在其中的扩散区 最大浓度峰值。 此外，选择第一种和第二种的植入剂量和植入能量使得第二种类在脆化区比第一物种扩散区更深地植入，其中第一种被选择以提供基本上化学植入从而形成血小板缺陷 在供体底物中，并且选择第二种以提供物理植入，从而充当供体晶片中的内部压力源，以对血小板缺陷施加压力。 接下来，将供体基板的表面放置成与支撑基板接触，然后在脆化区域分离施主基板，以将薄层转移到支撑基板，同时最小化转印层的起泡和表面粗糙度。 优选地，第一种类的植入剂量在所有植入剂量的约40至60％和通常约50％之间。 该方法优选用于形成或制造SeOI（半导体绝缘体）结构。