公开(公告)号：US20060138604A1

公开(公告)日：2006-06-29

申请号：US11020270

申请日：2004-12-27

Applicant: Christopher Kirby ,  Robert Horner ,  Harlan Cramer ,  Robert Howell ,  Robert Tranchini ,  Gregory DeSalvo ,  Gilbert Dix ,  Jeremiah Horner

Inventor： Christopher Kirby ,  Robert Horner ,  Harlan Cramer ,  Robert Howell ,  Robert Tranchini ,  Gregory DeSalvo ,  Gilbert Dix ,  Jeremiah Horner

IPC: H01L23/58

CPC classification number: B81C99/0035 ,  B81B2201/016 ,  H01H1/0036 ,  H01H2001/0052

Abstract: An improved dielectric suitable for use in electronic and micro-electromechanical (MEMS) components. The dielectric includes silicon nitride having a percentage of Si:H bonds greater than a percentage of N:H bonds, in order to reduce the level of charge trapping of the silicon nitride.

Abstract translation: 适用于电子和微机电（MEMS）部件的改进电介质。 电介质包括具有大于N：H键的百分比的Si:H键的百分比的氮化硅，以便降低氮化硅的电荷捕获的水平。