公开(公告)号：US20180075994A1

公开(公告)日：2018-03-15

申请号：US15698819

申请日：2017-09-08

申请人： Innovative Micro Technology

发明人： Christopher S. GUDEMAN

IPC分类号： H01H59/00 ,  H01H49/00

CPC分类号： H01H59/0009 ,  H01H49/00 ,  H01H2001/0052 ,  H01H2201/024 ,  H01H2229/016

摘要： Systems and methods for forming an electrostatic MEMS switch that is used to hot switch a source of current or voltage. At least one surface of the MEMS switch is treated with an ion milling machine to reduce surface roughness to less than about 10 nm rms.

公开(公告)号：US09911563B2

公开(公告)日：2018-03-06

申请号：US13955866

申请日：2013-07-31

申请人： ANALOG DEVICES GLOBAL

发明人： John G Macnamara ,  Padraig L. Fitzgerald ,  Raymond C Goggin ,  Bernard P Stenson

IPC分类号： H01H59/00 ,  B81C1/00 ,  B81B7/00 ,  H01H1/00

CPC分类号： H01H59/0009 ,  B81B7/007 ,  B81B2201/014 ,  B81B2207/092 ,  B81C1/00341 ,  H01H2001/0052 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49109 ,  H01L2924/181 ,  Y10T307/937 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： A MEMS switch device including: a substrate layer; an insulating layer formed over the substrate layer; and a MEMS switch module having a plurality of contacts formed on the surface of the insulating layer, wherein the insulating layer includes a number of conductive pathways formed within the insulating layer, the conductive pathways being configured to interconnect selected contacts of the MEMS switch module.

公开(公告)号：US20170271114A1

公开(公告)日：2017-09-21

申请号：US15073372

申请日：2016-03-17

申请人： NORTHROP GRUMMAN SYSTEMS CORPORATION

发明人： XING LAN ,  Chunbo Zhang

IPC分类号： H01H49/00 ,  H01H59/00 ,  H01H1/00

CPC分类号： H01H59/0009 ,  B81B2201/014 ,  B81B2201/016 ,  B81C1/00373 ,  H01H1/0036 ,  H01H2001/0052 ,  H01H2059/0072

摘要： A method for fabricating an MEMS switch including providing a substrate and printing at least one metal bias electrode, at least one metal connection pad and at least one metal contact pad on the substrate. The method then prints a sacrificial layer on the substrate and over the at least one bias electrode, and prints a flexible beam structure on the sacrificial layer. The sacrificial layer is then removed by dissolving the sacrificial layer in a wet solution to release the beam structure so that the beam structure is spaced some distance from the at least one bias electrode and the contact pad.

公开(公告)号：US20160293540A1

公开(公告)日：2016-10-06

申请号：US14920621

申请日：2015-10-22

申请人： STMicroelectronics (Rousset) SAS

发明人： Christian Rivero ,  Pascal Fornara ,  Sebastian Orellana

IPC分类号： H01L23/522 ,  H01H59/00 ,  H01L23/532

CPC分类号： H01H49/00 ,  H01H59/0009 ,  H01H2001/0052 ,  H01H2001/0057 ,  H01H2001/0078 ,  H01H2061/006 ,  H01L23/5222 ,  H01L23/5223 ,  H01L23/5226 ,  H01L23/525 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266

摘要： In order, for example, to improve the ohmic contact between two metal pieces located at a metallization level, these two metal pieces are equipped with two offset vias located at the metallization level and at least partially at the via level immediately above. Each offset via comprises, for example, a nonoxidizable or substantially nonoxidizable compound, such as a barrier layer of Ti/TiN.

摘要翻译： 为了例如，为了改善位于金属化水平的两个金属片之间的欧姆接触，这两个金属片配备有位于金属化水平处的至少部分地至少部分地在上面的通孔级的两个偏移通孔。 每个偏移通孔包括例如不可氧化或基本上不可氧化的化合物，例如Ti / TiN的阻挡层。

公开(公告)号：US08779886B2

公开(公告)日：2014-07-15

申请号：US12627476

申请日：2009-11-30

申请人： Marco Francesco Aimi ,  Shubhra Bansal ,  Christopher Fred Keimel ,  Kuna Venkat Satya Rama Kishore ,  Sairam Sundaram ,  Parag Thakre

发明人： Marco Francesco Aimi ,  Shubhra Bansal ,  Christopher Fred Keimel ,  Kuna Venkat Satya Rama Kishore ,  Sairam Sundaram ,  Parag Thakre

IPC分类号： H01H37/00 ,  H01H57/00 ,  H01H37/46 ,  H01H61/00 ,  H01H71/18

CPC分类号： H01H59/0009 ,  H01H1/0036 ,  H01H2001/0052 ,  H01H2001/0084

摘要： A device, such as a switch structure, is provided. The switch structure can include a contact and a conductive element each respectively disposed on a substrate. The conductive element can be composed substantially of metallic material, and can be configured to be deformable between a first position, in which the conductive element is separated from the contact by a separation distance, and a second position, in which the conductive element contacts the contact and stores mechanical energy. The conductive element can be further configured such that, subsequent to being deformed into the second position at a temperature between about room temperature and about half of a melting temperature of the metallic material for a cumulative time of at least 107 seconds, the separation distance in the absence of external forces varies by less than 20 percent over the cumulative time. Associated methods are also provided.

摘要翻译： 提供了诸如开关结构的装置。 开关结构可以包括分别设置在基板上的触点和导电元件。 导电元件可以大体上由金属材料构成，并且可以被配置为可在第一位置和第二位置之间变形，第一位置和导电元件接触的第二位置 联系和存储机械能。 导电元件可以进一步构造成使得，在金属材料的熔融温度约为室温至大约一半的温度下变形为第二位置，累积时间至少为107秒，间隔距离 没有外部力量在累积时间内变化不到20％。 还提供了相关的方法。

公开(公告)号：US20120279838A1

公开(公告)日：2012-11-08

申请号：US13160742

申请日：2011-06-15

申请人： You-Liang LAI ,  Ying-Zong JUANG ,  Hann-Huei TSAI ,  Sheng-Hsiang TSENG ,  Chin-Fong CHIU

发明人： You-Liang LAI ,  Ying-Zong JUANG ,  Hann-Huei TSAI ,  Sheng-Hsiang TSENG ,  Chin-Fong CHIU

IPC分类号： H01H59/00

CPC分类号： H01H1/0036 ,  H01H1/20 ,  H01H2001/0052 ,  H01H2001/0057 ,  H01H2001/0078 ,  H01H2061/006 ,  H01L27/0617

摘要： A CMOS-MEMS switch structure is disclosed. The CMOS-MEMS switch structure includes a first substrate, a second substrate, a first cantilever beam, and a second cantilever beam. The first and second substrates are positioned opposite each other. The first cantilever beam is provided on the first substrate, extends from the first substrate toward the second substrate, and bends downward. Likewise, the second cantilever beam is provided on the second substrate, extends from the second substrate toward the first substrate, and bends downward. The first and second substrates are movable toward each other to connect a first top surface of the first cantilever beam and a second top surface of the second cantilever beam, and away from each other so that the first top surface of the first cantilever beam and the second top surface of the second cantilever beam are disconnected, thereby closing or opening the CMOS-MEMS switch structure.

摘要翻译： 公开了一种CMOS-MEMS开关结构。 CMOS-MEMS开关结构包括第一基板，第二基板，第一悬臂梁和第二悬臂梁。 第一和第二基板彼此相对定位。 第一悬臂梁设置在第一基板上，从第一基板朝向第二基板延伸，并向下弯曲。 类似地，第二悬臂梁设置在第二基板上，从第二基板朝向第一基板延伸并向下弯曲。 第一和第二基板可彼此移动以将第一悬臂梁的第一顶表面和第二悬臂梁的第二顶表面彼此远离，以使第一悬臂梁的第一顶表面和 第二悬臂梁的第二顶表面被断开，从而关闭或打开CMOS-MEMS开关结构。

公开(公告)号：US20110281389A1

公开(公告)日：2011-11-17

申请号：US13189734

申请日：2011-07-25

申请人： Mayumi Mikami ,  Konami Izumi

发明人： Mayumi Mikami ,  Konami Izumi

IPC分类号： H01L21/00

CPC分类号： H01H59/0009 ,  B81B2201/018 ,  B81C1/00166 ,  H01H1/58 ,  H01H2001/0052 ,  H01H2001/0057 ,  Y10T29/49155

摘要： A structure which prevents thinning and disconnection of a wiring is provided, in a micromachine (MEMS structure body) formed with a surface micromachining technology. A wiring (upper auxiliary wiring) over a sacrificial layer is electrically connected to a different wiring (upper connection wiring) over the sacrificial layer, so that thinning, disconnection, and the like of the wiring formed over the sacrificial layer at a step portion generated due to the thickness of the sacrificial layer can be prevented. The wiring over the sacrificial layer is formed of the same conductive film as an upper driving electrode which is a movable electrode and is thus thin. However, the different wiring is formed over a structural layer, which is formed by a CVD method and has a rounded step, and has a thickness of 200 nm to 1 μm, whereby thinning, disconnection, and the like of the wiring can be further prevented.

摘要翻译： 在形成有表面微机械加工技术的微型机械（MEMS机构）中，提供了防止配线断线和断线的结构。 在牺牲层之上的布线（上辅助布线）在牺牲层上电连接到不同的布线（上连接布线），从而在生成的台阶部分上形成在牺牲层上的布线的变薄，断开等 由于可以防止牺牲层的厚度。 牺牲层上的布线由与作为可动电极的上驱动电极相同的导电膜形成，因此薄。 然而，不同的布线形成在通过CVD法形成并具有圆形台阶的结构层上，并且具有200nm至1μm的厚度，从而可以进一步布线的变薄，断开等 防止了

公开(公告)号：US20110220471A1

公开(公告)日：2011-09-15

申请号：US12932992

申请日：2011-03-11

申请人： Hubert Benzel ,  Christoph Schelling

发明人： Hubert Benzel ,  Christoph Schelling

IPC分类号： H01H59/00 ,  H01H11/00

CPC分类号： B81C1/00484 ,  B81B2201/014 ,  B81C2201/0143 ,  H01H1/0036 ,  H01H2001/0052 ,  Y10T29/49105

摘要： A micromechanical component, e.g., a switch, includes a substrate having at least one recess, at least two electrically conductive contact surfaces provided in the region of the recess, and an actuator. The contact surfaces are able to be brought into contact with one another for electrical conduction with the aid of the actuator.

摘要翻译： 微机械部件例如开关包括具有至少一个凹部，设置在凹部的区域中的至少两个导电接触表面和致动器的基板。 接触表面能够在致动器的帮助下彼此接触以进行导电。

公开(公告)号：US07786820B2

公开(公告)日：2010-08-31

申请号：US11374815

申请日：2006-03-14

申请人： Andrew Tye Hunt ,  Ioannis (John) Papapolymerou ,  Todd A. Polley ,  Guoan Wang

发明人： Andrew Tye Hunt ,  Ioannis (John) Papapolymerou ,  Todd A. Polley ,  Guoan Wang

IPC分类号： H01P5/04

CPC分类号： H01G7/06 ,  H01G5/18 ,  H01G5/40 ,  H01H59/0009 ,  H01H2001/0052

摘要： The invention is a tunable RF MEMS switch developed with a BST dielectric at the contact interface. BST has a very high dielectric constant (>300) making it very appealing for RF MEMS capacitive switches. The tunable dielectric constant of BST provides a possibility of making linearly tunable MEMS capacitive switches. The capacitive tunable RF MEMS switch with a BST dielectric is disclosed showing its characterization and properties up to 40 GHz.

摘要翻译： 本发明是在接触界面处用BST电介质开发的可调谐RF MEMS开关。 BST具有非常高的介电常数（> 300），使其对RF MEMS电容开关非常有吸引力。 BST的可调谐介电常数提供了线性可调MEMS电容开关的可能性。 公开了具有BST电介质的电容可调谐RF MEMS开关，其显示其高达40GHz的特性和特性。

公开(公告)号：US20080250785A1

公开(公告)日：2008-10-16

申请号：US11785119

申请日：2007-04-16

申请人： Gregory A. Carlson ,  Patrick E. Feierabend ,  John S. Foster ,  Daryl W. Grummit ,  Alok Paranjpye ,  Paul J. Rubel ,  Jeffery F. Summers ,  Douglas L. Thompson

发明人： Gregory A. Carlson ,  Patrick E. Feierabend ,  John S. Foster ,  Daryl W. Grummit ,  Alok Paranjpye ,  Paul J. Rubel ,  Jeffery F. Summers ,  Douglas L. Thompson

IPC分类号： F01B29/10

CPC分类号： H01H1/0036 ,  H01H1/023 ,  H01H1/04 ,  H01H2001/0052 ,  H01H2001/0078 ,  H01H2061/006 ,  H01H2061/008

摘要： A MEMS switch device is made using a gold alloy as the switch contact material. The increased mechanical hardness of the alloy compared to the pure gold prevents the contacts of the switch from welding together. A scrubbing action which occurs when the switch closes may allow the contact surfaces to come to rest where their surfaces are complementary, thus resulting in higher contact area and low contact resistance, despite the higher sheet resistance of the gold alloy material relative to the pure gold material.

摘要翻译： 使用金合金作为开关触点材料制造MEMS开关装置。 与纯金相比，合金的增加的机械硬度防止开关的接触焊接在一起。 当开关闭合时发生的擦洗动作可允许接触表面在其表面互补的情况下停止，因此导致更高的接触面积和低的接触电阻，尽管金合金材料相对于纯金的较高的薄层电阻 材料。