公开(公告)号：US4592130A

公开(公告)日：1986-06-03

申请号：US671802

申请日：1984-11-15

Applicant: Greg Nash

Inventor： Greg Nash

IPC: G11C17/04 ,  H01L27/105 ,  H01L29/10 ,  H01L21/265 ,  H01L29/78

CPC classification number: G11C17/04 ,  H01L27/1057 ,  H01L29/1062 ,  Y10S148/053

Abstract: The specification describes a high capacity nonvolatile CCD read only memory system that includes a plurality of memory cells. Selected ones of the memory cells include a double-diffused region having a first and second implant or diffusion under a clocked electrode whereby the first implant or diffusion provides a fixed charge required for ROM operation and the charge and polarity of said second implant or diffusion provides a neutralizing effect on the surface potential under the clocked electrode and above the double implanted or double diffused region.

Abstract translation: 本说明书描述了包括多个存储单元的高容量非易失性CCD只读存储器系统。 所选择的存储单元包括在时钟电极下具有第一和第二注入或扩散的双扩散区域，由此第一注入或扩散提供ROM操作所需的固定电荷，并且所述第二注入或扩散的电荷和极性提供 对时钟电极下方的表面电位和双注入或双扩散区域以上的中和作用。

公开(公告)号：US4903097A

公开(公告)日：1990-02-20

申请号：US831881

申请日：1986-02-24

Applicant: Greg Nash

Inventor： Greg Nash

IPC: G11C17/04 ,  H01L27/105 ,  H01L29/10

CPC classification number: H01L27/1057 ,  G11C17/04 ,  H01L29/1062

Abstract: The specification describes a high capacity nonvolatile CCD read only memory system that includes a plurality of memory cells. Selected ones of the memory cells include a double-diffused region having a first and second implant or diffusion under a clocked electrode whereby the first implant or diffusion provides a fixed charge required for ROM operation and the charge and polarity of said second implant or diffusion provides a neutralizing effect on the surface potential under the clocked electrode and above the double implanted or double diffused region.

Abstract translation: 本说明书描述了包括多个存储单元的高容量非易失性CCD只读存储器系统。 所选择的存储单元包括在时钟电极下具有第一和第二注入或扩散的双扩散区域，由此第一注入或扩散提供ROM操作所需的固定电荷，并且所述第二注入或扩散的电荷和极性提供 对时钟电极下方的表面电位和双注入或双扩散区域以上的中和作用。