公开(公告)号：US4182964A

公开(公告)日：1980-01-08

申请号：US273363

申请日：1972-07-20

申请人： Shoei Kataoka ,  Hiroshi Tateno ,  Hiroyuki Fujisada ,  Hideo Yamada ,  Mitsuo Kawashima ,  Yasuo Komamiya

发明人： Shoei Kataoka ,  Hiroshi Tateno ,  Hiroyuki Fujisada ,  Hideo Yamada ,  Mitsuo Kawashima ,  Yasuo Komamiya

IPC分类号： H01L47/02 ,  H03B7/14 ,  H03F3/10

CPC分类号： H01L47/02

摘要： Occurrence of high field domain in the conventional Gunn diode is prevented by covering a solid body such as a semiconductor element partially or wholly by a dielectric member or by a control element such as a metallic layer coupled reactively with the solid body through a dielectric member, whereby a solid state element having a negative differential conductivity is obtained. Such a type of negative-resistance solid state element, together with its various modes of embodimental construction disclosed herein, affords a superior solid state element which is applicable to amplifiers, oscillators, logic memories, and the like of millimeter or submillimeter bands.

摘要翻译： 常规耿氏二极管中的高场域的发生通过电介质部件或部分或全部覆盖半导体元件等固体，或通过电介质部件与固体本身反应地连接的金属层等控制元件， 由此获得具有负差分电导率的固态元件。 这种类型的负电阻固体元件以及本文公开的各种实施形式的结构，提供了可应用于毫米波或亚毫米波段的放大器，振荡器，逻辑存储器等的优越的固态元件。

公开(公告)号：US4863880A

公开(公告)日：1989-09-05

申请号：US171779

申请日：1988-03-22

申请人： Hiroyuki Fujisada

发明人： Hiroyuki Fujisada

IPC分类号： C25D11/32 ,  H01L21/316

CPC分类号： H01L21/02241 ,  H01L21/02258 ,  H01L21/31679

摘要： A method of manufacturing an InSb device that uses an anodic oxide layer as a structural element, utilizing a voltage-controlled mechanism to control the thickness of the anodic oxide layer formation, and in which the anodization time under an anodization limiting voltage is not less than 10 seconds and not more than 20 minutes.

摘要翻译： 一种制造使用阳极氧化层作为结构元件的InSb器件的方法，利用电压控制机构来控制阳极氧化层形成的厚度，其中在阳极氧化极限电压下的阳极氧化时间不小于 10秒不超过20分钟。

公开(公告)号：US4204132A

公开(公告)日：1980-05-20

申请号：US822658

申请日：1977-08-08

申请人： Shoei Kataoka ,  Yoshinobu Sugiyama ,  Hiroyuki Fujisada

发明人： Shoei Kataoka ,  Yoshinobu Sugiyama ,  Hiroyuki Fujisada

IPC分类号： H01L43/06 ,  H03B7/00

CPC分类号： H01L43/065

摘要： A semiconductor capable of exhibiting an electron transfer effect in a high electric field is used as a Hall element. Application of a voltage large enough to give rise to an electron transfer effect to the current input electrodes of the Hall element brings about a decrease in the concentration of electrons contributing to the Hall effect occurring within the semiconductor, an increase in the Hall coefficient and a notable enhancement in the sensitivity of the Hall element.

摘要翻译： 能够在高电场中显示电子转移效应的半导体被用作霍尔元件。 施加足够大的电压以产生对霍尔元件的电流输入电极的电子转移效应导致对半导体内发生的霍尔效应有影响的电子的浓度降低，霍尔系数的增加和 显着提高了霍尔元件的灵敏度。