公开(公告)号：US20070176210A1

公开(公告)日：2007-08-02

申请号：US11702011

申请日：2007-02-02

申请人： Brian Murphy ,  Maik Haberlen ,  Jorg Lindner ,  Bernd Stritzker

发明人： Brian Murphy ,  Maik Haberlen ,  Jorg Lindner ,  Bernd Stritzker

IPC分类号： H01L27/10

CPC分类号： H01L21/02694 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02551 ,  H01L21/02658 ,  H01L21/26506

摘要： Semiconductor layer structure and a method for producing a structure are provided, including a substrate made of semiconductor material, on which a layer made of a second semiconductor material is situated, furthermore a region (3) enriched with impurity atoms, which region is situated either in layer (2) or at a specific depth below the interface between layer (2) and substrate (1), additionally a layer (4) within the region (3) enriched with impurity atoms, which layer comprises cavities produced by ion implantation, furthermore at least one epitaxial layer (6) applied to layer (2) and also a defect region (5) comprising dislocations and stacking faults within the layer (4) comprising cavities, the at least one epitaxial layer (6) being largely crack-free, and a residual strain of the at least one epitaxial layer (6) being less than or equal to 1 GPa.

摘要翻译： 提供半导体层结构和制造结构的方法，包括由半导体材料制成的基板，在其上设置由第二半导体材料制成的层，此外还包括富含杂质原子的区域（3），该区域位于 在层（2）中或在层（2）和衬底（1）之间的界面下方的特定深度处，另外在区域（3）内富含杂质原子的层（4），该层包括通过离子注入产生的空穴， 此外，施加到层（2）的至少一个外延层（6）还包括在包括空腔的层（4）内的位错和层叠缺陷的缺陷区域（5），所述至少一个外延层（6） 所述至少一个外延层（6）的残余应变小于或等于1GPa。