公开(公告)号：US09064892B2

公开(公告)日：2015-06-23

申请号：US13221160

申请日：2011-08-30

申请人： Wen Chu Hsiao ,  Ju Wen Hsiao ,  Ying Min Chou ,  Hsiang Hsiang Ko ,  Ying-Lang Wang

发明人： Wen Chu Hsiao ,  Ju Wen Hsiao ,  Ying Min Chou ,  Hsiang Hsiang Ko ,  Ying-Lang Wang

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/165

CPC分类号： H01L29/66636 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/0262 ,  H01L21/30604 ,  H01L29/165 ,  H01L29/167 ,  H01L29/7834 ,  H01L29/7848

摘要： A semiconductor structure and method for forming the same provide a high mobility stressor material suitable for use as source/drain regions or other active devices. The structure is formed in a substrate opening and is doped with an impurity such as boron in upper portions but is void of the impurity in regions that contact the surfaces of the opening. The structure is therefore resistant to out-diffusion of the dopant impurity during high temperature operations and may be formed through selective deposition using reduced pressure chemical vapor deposition or reduced pressure epitaxial deposition.

摘要翻译： 半导体结构及其形成方法提供适合用作源极/漏极区域或其它有源器件的高迁移率应力源材料。 该结构形成在衬底开口中，并且在上部掺杂有诸如硼的杂质，但是在与开口的表面接触的区域中不含杂质。 因此，该结构在高温操作期间抵抗掺杂剂杂质的扩散，并且可以通过使用减压化学气相沉积或减压外延沉积的选择性沉积来形成。

公开(公告)号：US20130049101A1

公开(公告)日：2013-02-28

申请号：US13221160

申请日：2011-08-30

申请人： Wen Chu HSIAO ,  Ju Wen HSIAO ,  Ying Min CHOU ,  Hsiang Hsiang KO ,  Ying-Lang WANG

发明人： Wen Chu HSIAO ,  Ju Wen HSIAO ,  Ying Min CHOU ,  Hsiang Hsiang KO ,  Ying-Lang WANG

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66636 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/0262 ,  H01L21/30604 ,  H01L29/165 ,  H01L29/167 ,  H01L29/7834 ,  H01L29/7848

摘要： A semiconductor structure and method for forming the same provide a high mobility stressor material suitable for use as source/drain regions or other active devices. The structure is formed in a substrate opening and is doped with an impurity such as boron in upper portions but is void of the impurity in regions that contact the surfaces of the opening. The structure is therefore resistant to out-diffusion of the dopant impurity during high temperature operations and may be formed through selective deposition using reduced pressure chemical vapor deposition or reduced pressure epitaxial deposition.

摘要翻译： 半导体结构及其形成方法提供适合用作源极/漏极区域或其它有源器件的高迁移率应力源材料。 该结构形成在衬底开口中，并且在上部掺杂有诸如硼的杂质，但是在与开口的表面接触的区域中不含杂质。 因此，该结构在高温操作期间抵抗掺杂剂杂质的扩散，并且可以通过使用减压化学气相沉积或减压外延沉积的选择性沉积来形成。