公开(公告)号：US20130000721A1

公开(公告)日：2013-01-03

申请号：US13634971

申请日：2010-03-31

申请人： Yoshiyuki Nasuno ,  Kazuhito Nishimura ,  Hiroki Tanimura ,  Kei Kajihara

发明人： Yoshiyuki Nasuno ,  Kazuhito Nishimura ,  Hiroki Tanimura ,  Kei Kajihara

IPC分类号： H01L31/0236 ,  H01L31/18

CPC分类号： H01L31/02366 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/03925 ,  Y02E10/541 ,  Y02P70/521

摘要： A photoelectric conversion device includes a substrate and a transparent, electrically conductive film covering at least a portion of a major surface of the substrate and having an irregular geometry on a surface thereof closer to a semiconductor layer. Furthermore, the photoelectric conversion device includes a first conduction type semiconductor layer covering at least a portion of the irregular geometry of the transparent, electrically conductive film, and a light absorption layer covering the first conduction type semiconductor layer. The irregular geometry has a bump having a maximum height equal to or larger than 50 nm and equal to or smaller than 1200 nm. The bump has a surface having a submicron recess having local peaks having a spacing equal to or larger than 2 nm and equal to or smaller than 25 nm.

摘要翻译： 光电转换装置包括基板和覆盖基板的主表面的至少一部分并且在其更靠近半导体层的表面上具有不规则几何形状的透明导电膜。 此外，光电转换装置包括覆盖透明导电膜的不规则几何形状的至少一部分的第一导电型半导体层和覆盖第一导电型半导体层的光吸收层。 不规则几何形状具有最大高度等于或大于50nm且等于或小于1200nm的凸块。 凸块具有具有亚微米凹部的表面，其具有等于或大于2nm且等于或小于25nm的间隔的局部峰。