公开(公告)号：US11881536B2

公开(公告)日：2024-01-23

申请号：US16959654

申请日：2019-02-15

申请人： NewSouth Innovations Pty Limited

发明人： Xiaojing Hao ,  Robert John Patterson ,  Shiyou Chen ,  Martin Andrew Green

IPC分类号： H01L31/18 ,  H01L31/0749 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/032

CPC分类号： H01L31/18 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/0304 ,  H01L31/0322 ,  H01L31/0324 ,  H01L31/03046 ,  H01L31/0749 ,  Y02E10/541

摘要： Disclosed is an adamantine semiconductor. The semiconductor comprises a first element being from one of the following groups: VIII, VII, VI, V, IV, III, II, Ī or 0. The semiconductor also comprises at least two other elements, the at least two other elements being from group I, II, III, IV, V, VI and/or VII. The first element being from group VIII, VII, VI, V, IV, III, II, Ī or 0 includes an element not formally being from group VIII, VII, VI, V, IV, III, II, Ī or 0 but is known to assume the same oxidation state as the elements that do lie in these groups. The at least two other elements from group I, II, III, IV, V, VI and/or VII includes elements not formally being from group I, II, III, IV, V, VI and/or VII but are known to assume the same oxidation state as the elements that do lie in these groups.

公开(公告)号：US11735446B2

公开(公告)日：2023-08-22

申请号：US16364077

申请日：2019-03-25

申请人： TSMC Solar Ltd.

发明人： Wei-Lun Lu ,  Jyh-Lih Wu ,  Wen-Tsai Yen

IPC分类号： H01L21/67 ,  C23C14/50 ,  C23C14/58 ,  C23C14/24 ,  H01L31/032

CPC分类号： H01L21/67248 ,  C23C14/243 ,  C23C14/50 ,  C23C14/5866 ,  H01L21/67109 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/50

摘要： A substrate carrier, includes: a unitary body fabricated from a single block of graphite, wherein the body comprises a back plate, and a pair of spaced apart, substantially parallel, side rails, wherein each of the side rails comprises: an inwardly facing surface extending outwardly of the back plate; a longitudinally extending selenium vapor bore formed therein, a top end of the selenium vapor bore being open and configured for coupling to a selenium supply container for receiving selenium vapor by gravity, a bottom end of the selenium vapor bore being closed; an inwardly directed selenium vapor channel; a plurality of selenium vapor outlets disposed between the selenium vapor bore and the inwardly directed selenium vapor channel so as provide a plurality of conduits between the selenium vapor bore and the selenium vapor channel; and, a longitudinally extending engagement slot formed in the inwardly facing surface of each side rail adjacent the back plate to engage and hold a substrate in proximity to the back plate.

公开(公告)号：US20190123232A1

公开(公告)日：2019-04-25

申请号：US16126658

申请日：2018-09-10

申请人： International Business Machines Corporation

发明人： Sunit S. Mahajan ,  Teodor K. Todorov

IPC分类号： H01L31/18 ,  C23C16/52 ,  C23C16/46 ,  C23C16/455 ,  C23C14/24 ,  H01L31/032 ,  C23C14/06

CPC分类号： H01L31/18 ,  C23C14/0629 ,  C23C14/24 ,  C23C16/455 ,  C23C16/46 ,  C23C16/52 ,  H01L31/0322 ,  H01L31/0324 ,  H01L31/0326 ,  Y02E10/541 ,  Y02P70/521

摘要： Techniques for precisely controlling the composition of volatile components (such as sulfur (S), selenium (Se), and tin (Sn)) of chalcogenide semiconductors in real-time—during production of the material are provided. In one aspect, a method for forming a chalcogenide semiconductor material includes providing a S source(s) and a Se source(s); heating the S source(s) to form a S-containing vapor; heating the Se source(s) to form a Se-containing vapor; passing a carrier gas first through the S-containing vapor and then through the Se-containing vapor, wherein the S-containing vapor and the Se-containing vapor are transported via the carrier gas to a sample; and contacting the S-containing vapor and the Se-containing vapor with the sample under conditions sufficient to form the chalcogenide semiconductor material. A multi-chamber processing apparatus is also provided.

公开(公告)号：US20180248057A1

公开(公告)日：2018-08-30

申请号：US15964924

申请日：2018-04-27

申请人： Nanoco Technologies Ltd.

发明人： Christopher Newman ,  Ombretta Masala ,  Paul Kirkham ,  Cary Allen ,  Stephen Whitelegg

IPC分类号： H01L31/032 ,  H01L31/075 ,  C01B19/00 ,  C01G15/00 ,  H01L31/0203 ,  H01L31/0392 ,  B82Y40/00 ,  B82Y30/00

CPC分类号： H01L31/0322 ,  B82Y30/00 ,  B82Y40/00 ,  C01B19/002 ,  C01G15/006 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2006/40 ,  H01L31/0203 ,  H01L31/03923 ,  H01L31/075 ,  Y02E10/541

摘要： A method for the preparation of copper indium gallium diselenide/disulfide (CIGS) nanoparticles utilizes a copper-rich stoichiometry. The copper-rich CIGS nanoparticles are capped with organo-chalcogen ligands, rendering the nanoparticles processable in organic solvents. The nanoparticles may be deposited on a substrate and thermally processed in a chalcogen-rich atmosphere to facilitate conversion of the excess copper to copper selenide or copper sulfide that may act as a sintering flux to promote liquid phase sintering and thus the growth of large grains. The nanoparticles so produced may be used to fabricate CIGS-based photovoltaic devices.

公开(公告)号：US20180245209A1

公开(公告)日：2018-08-30

申请号：US15904647

申请日：2018-02-26

申请人： SIVA POWER, INC.

发明人： Markus Eberhard Beck ,  Ulrich Alexander Bonne ,  Robert G. Wendt

IPC分类号： C23C14/26 ,  H01L51/56 ,  H01L31/046 ,  H01L31/18 ,  H01L31/032 ,  H01L51/00 ,  C23C14/24 ,  F28D15/00 ,  F25D17/02 ,  F25B39/00 ,  C23C16/52 ,  C23C16/448 ,  C23C16/28 ,  C23C16/02 ,  C23C14/54 ,  F25B39/02 ,  H01L21/02

CPC分类号： C23C14/26 ,  C23C14/24 ,  C23C14/243 ,  C23C14/542 ,  C23C16/0209 ,  C23C16/28 ,  C23C16/448 ,  C23C16/4485 ,  C23C16/52 ,  F25B39/00 ,  F25B39/02 ,  F25D17/02 ,  F28D15/00 ,  H01L21/02568 ,  H01L21/02631 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/046 ,  H01L31/18 ,  H01L51/001 ,  H01L51/56 ,  Y02E10/541

摘要： In various embodiments, evaporation sources for deposition systems are heated and/or cooled via a fluid-based thermal management system.

公开(公告)号：US09966486B2

公开(公告)日：2018-05-08

申请号：US14123462

申请日：2012-05-30

申请人： Kyung Eun Park

发明人： Kyung Eun Park

IPC分类号： H01L31/0352 ,  H01L31/032 ,  H01L31/068 ,  H01L31/0749 ,  H01L31/075 ,  H01L31/061 ,  H01L31/0468 ,  H01L31/18

CPC分类号： H01L31/035281 ,  H01L31/0322 ,  H01L31/0468 ,  H01L31/061 ,  H01L31/068 ,  H01L31/0749 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/1884 ,  Y02E10/541 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： Disclosed are a solar cell apparatus and a method of fabricating the same. The solar cell apparatus includes a substrate, a first electrode layer on the substrate, a plurality of light absorbing columns on the first electrode layer, and a second electrode layer on the light absorbing columns.

公开(公告)号：US09960314B2

公开(公告)日：2018-05-01

申请号：US14480327

申请日：2014-09-08

申请人： Nanoco Technologies Ltd.

发明人： Zugang Liu ,  Cary Allen

IPC分类号： H01L31/18 ,  H01L31/0272 ,  C09D11/52 ,  H01L31/032 ,  C09D11/322

CPC分类号： H01L31/1864 ,  C09D11/322 ,  C09D11/52 ,  H01L31/0272 ,  H01L31/0322 ,  Y02E10/541

摘要： Compositions for solution-based deposition of CIGS films are described. The compositions include ternary, quaternary or quinary chalcogenide nanoparticles (i.e., CIGS nanoparticles) and one or more inorganic salts dissolved or dispersed in a solvent to form an ink. The ink can be deposited on a substrate by conventional coating techniques and then annealed to form a crystalline layer. Further processing can be employed to fabricate a PV device. The inorganic salts are included to (i) tune the stoichiometry of the CIGS precursor ink to a desirable ratio, thus tuning the semiconductor band gap, to (ii) dope the CIGS layer with additives, such as Sb and/or Na, to promote grain growth, and/or to (iii) modify and improve the coating properties of the CIGS precursor ink.

公开(公告)号：US09960298B2

公开(公告)日：2018-05-01

申请号：US14541861

申请日：2014-11-14

申请人： Nanoco Technologies Ltd.

发明人： Christopher Newman ,  Ombretta Masala ,  Paul Kirkham ,  Cary Allen ,  Stephen Whitelegg

IPC分类号： H01L31/032 ,  H01L31/075 ,  C01B19/00 ,  C01G15/00 ,  H01L31/0203 ,  H01L31/0392 ,  B82Y30/00 ,  B82Y40/00

CPC分类号： H01L31/0322 ,  B82Y30/00 ,  B82Y40/00 ,  C01B19/002 ,  C01G15/006 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2006/40 ,  H01L31/0203 ,  H01L31/03923 ,  H01L31/075 ,  Y02E10/541

摘要： A method for the preparation of copper indium gallium diselenide/disulfide (CIGS) nanoparticles utilizes a copper-rich stoichiometry. The copper-rich CIGS nanoparticles are capped with organo-chalcogen ligands, rendering the nanoparticles processable in organic solvents. The nanoparticles may be deposited on a substrate and thermally processed in a chalcogen-rich atmosphere to facilitate conversion of the excess copper to copper selenide or copper sulfide that may act as a sintering flux to promote liquid phase sintering and thus the growth of large grains. The nanoparticles so produced may be used to fabricate CIGS-based photovoltaic devices.

公开(公告)号：US09941423B2

公开(公告)日：2018-04-10

申请号：US14803843

申请日：2015-07-20

申请人： Korea Institute of Science and Technology

发明人： Jeung-hyun Jeong ,  Won Mok Kim ,  Jong-Keuk Park

IPC分类号： H01L21/00 ,  H01L31/0463 ,  H01L31/0224 ,  H01L31/0749

CPC分类号： H01L31/022425 ,  H01L31/0463 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

摘要： A method for manufacturing a thin film solar cell includes: depositing a transparent first rear electrode on a first surface of a transparent substrate; depositing a second rear electrode having a high-conductive metal on the first rear electrode; performing a first laser scribing process to separate a double layer of the first and second rear electrodes; depositing a light absorption layer having selenium (Se) or sulfur (S) on the second rear electrode; performing a second laser scribing process by inputting a laser to a second surface of the transparent substrate to separate the light absorption layer; depositing a transparent electrode on the light absorption layer; and performing a third laser scribing process by inputting a laser to the second surface to separate the transparent electrode. Accordingly, patterning may be performed in a substrate-incident laser manner to improve price, productivity and precision of the patterning process.

公开(公告)号：US09893228B2

公开(公告)日：2018-02-13

申请号：US15126995

申请日：2015-03-25

申请人： KANEKA CORPORATION

发明人： Masashi Hino ,  Mitsuru Ichikawa ,  Tomomi Meguro

IPC分类号： H01L31/18 ,  H01L31/0392

CPC分类号： H01L31/18 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/03928 ,  H01L31/0749 ,  H01L31/1892 ,  H01L31/1896 ,  Y02E10/541 ,  Y02P70/521

摘要： A solar cell includes a metal layer and a chalcopyrite compound semiconductor layer in this order on a polyimide film. A manufacturing method according to the present invention includes the following steps in the order: cast applying a polyimide precursor solution onto a support base containing an alkali metal; imidizing the polyimide precursor by heating to form a stacked body including a polyimide film on the support base; forming a metal layer on the polyimide film of the stacked body; and forming a chalcopyrite compound semiconductor layer on the metal layer.