公开(公告)号：US20130224937A1

公开(公告)日：2013-08-29

申请号：US13883655

申请日：2011-11-04

申请人： Hiroki Tanimura ,  Yoshiyuki Nasuno ,  Kuriyo Shimada

发明人： Hiroki Tanimura ,  Yoshiyuki Nasuno ,  Kuriyo Shimada

IPC分类号： H01L21/02

CPC分类号： H01L21/0262 ,  C23C16/24 ,  C23C16/515 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696 ,  H01L31/076 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： Semiconductor layer forming gas is introduced into a reaction chamber, and the gas generates a plasma discharge, so that a semiconductor layer is formed. In addition to the gas, impurity gas is introduced into the chamber, and first conductivity type layer forming gas including the semiconductor layer forming gas and the impurity gas generates a plasma discharge, so that a first conductivity type layer of a first conductivity type is formed so as to cover the semiconductor layer. In the step of forming the first conductivity type layer, a composition set value of gas supplied to the chamber is shifted from a composition of the semiconductor layer forming gas to a composition of the first conductivity type layer forming gas in a state where a pressure in the chamber is not reduced to ultimate vacuum even after a plasma discharge processing for forming the semiconductor layer is terminated.

摘要翻译： 半导体层形成气体被引入到反应室中，并且气体产生等离子体放电，从而形成半导体层。 除了气体之外，杂质气体被引入到腔室中，并且包括半导体层形成气体和杂质气体的第一导电型层形成气体产生等离子体放电，从而形成第一导电类型的第一导电型层 以覆盖半导体层。 在形成第一导电类型层的步骤中，将供给到室的气体的组成设定值从半导体层形成气体的组成转变为第一导电型层形成气体的组成， 即使在用于形成半导体层的等离子体放电处理终止之后，室也不会减小到极限真空。

公开(公告)号：US20130000721A1

公开(公告)日：2013-01-03

申请号：US13634971

申请日：2010-03-31

申请人： Yoshiyuki Nasuno ,  Kazuhito Nishimura ,  Hiroki Tanimura ,  Kei Kajihara

发明人： Yoshiyuki Nasuno ,  Kazuhito Nishimura ,  Hiroki Tanimura ,  Kei Kajihara

IPC分类号： H01L31/0236 ,  H01L31/18

CPC分类号： H01L31/02366 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/03925 ,  Y02E10/541 ,  Y02P70/521

摘要： A photoelectric conversion device includes a substrate and a transparent, electrically conductive film covering at least a portion of a major surface of the substrate and having an irregular geometry on a surface thereof closer to a semiconductor layer. Furthermore, the photoelectric conversion device includes a first conduction type semiconductor layer covering at least a portion of the irregular geometry of the transparent, electrically conductive film, and a light absorption layer covering the first conduction type semiconductor layer. The irregular geometry has a bump having a maximum height equal to or larger than 50 nm and equal to or smaller than 1200 nm. The bump has a surface having a submicron recess having local peaks having a spacing equal to or larger than 2 nm and equal to or smaller than 25 nm.

摘要翻译： 光电转换装置包括基板和覆盖基板的主表面的至少一部分并且在其更靠近半导体层的表面上具有不规则几何形状的透明导电膜。 此外，光电转换装置包括覆盖透明导电膜的不规则几何形状的至少一部分的第一导电型半导体层和覆盖第一导电型半导体层的光吸收层。 不规则几何形状具有最大高度等于或大于50nm且等于或小于1200nm的凸块。 凸块具有具有亚微米凹部的表面，其具有等于或大于2nm且等于或小于25nm的间隔的局部峰。