公开(公告)号：US08315024B2

公开(公告)日：2012-11-20

申请号：US12560475

申请日：2009-09-16

申请人： Christian Russ ,  Wolfgang Soldner ,  Gernot Langguth ,  David Alvarez ,  Krysztof Domanski

发明人： Christian Russ ,  Wolfgang Soldner ,  Gernot Langguth ,  David Alvarez ,  Krysztof Domanski

IPC分类号： H02H3/22

CPC分类号： H01L27/0281 ,  H01L27/0285

摘要： Implementations are presented herein that include an electrostatic discharge (ESD) protection circuit. The ESD protection circuit includes a first transistor and a second transistor. The first transistor has a first terminal that is coupled to a first supply line and a bulk that is coupled to a second supply line. The second transistor has a first terminal that is coupled to the second supply line, a bulk that is coupled to the first supply line and a second terminal that is coupled to a second terminal of the first transistor to define a protected node. The ESD protection circuit further includes a current limiting element that has a first terminal that is coupled to the protected node.

摘要翻译： 本文给出了包括静电放电（ESD）保护电路的实现。 ESD保护电路包括第一晶体管和第二晶体管。 第一晶体管具有耦合到第一电源线的第一端子和耦合到第二电源线的本体。 第二晶体管具有耦合到第二电源线的第一端子，耦合到第一电源线的体和耦合到第一晶体管的第二端子以限定受保护节点的第二端子。 ESD保护电路还包括具有耦合到受保护节点的第一端子的限流元件。