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公开(公告)号:US08006315B2
公开(公告)日:2011-08-23
申请号:US12087103
申请日:2006-12-20
CPC分类号: G01Q60/12
摘要: The present invention relates to an indirect-gap semiconductor substrate, the gap being greater than that of silicon and preferably greater than 1.5 eV, to its use for imaging a specimen by photon-emission scanning tunnel microscopy, and to a photon-emission scanning tunnel imaging method using such an indirect-gap semiconductor substrate. Advantageously, the indirect-gap semiconductor substrate is made of silicon carbide. The present invention also relates to devices for implementing the imaging method according to the invention.
摘要翻译: 本发明涉及一种间接间隙半导体衬底,其间隙大于硅的间隙,优选大于1.5eV,用于通过光子发射扫描隧道显微镜对样品进行成像,以及光子发射扫描隧道 使用这种间接间隙半导体衬底的成像方法。 有利地,间接间隙半导体衬底由碳化硅制成。 本发明还涉及用于实现根据本发明的成像方法的装置。
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公开(公告)号:US20090300805A1
公开(公告)日:2009-12-03
申请号:US12087103
申请日:2006-12-20
CPC分类号: G01Q60/12
摘要: The present invention relates to an indirect-gap semiconductor substrate, the gap being greater than that of silicon and preferably greater than 1.5 eV, to its use for imaging a specimen by photon-emission scanning tunnel microscopy, and to a photon-emission scanning tunnel imaging method using such an indirect-gap semiconductor substrate. Advantageously, the indirect-gap semiconductor substrate is made of silicon carbide. The present invention also relates to devices for implementing the imaging method according to the invention.
摘要翻译: 本发明涉及一种间接间隙半导体衬底,其间隙大于硅的间隙,优选大于1.5eV,用于通过光子发射扫描隧道显微镜对样品进行成像,以及光子发射扫描隧道 使用这种间接间隙半导体衬底的成像方法。 有利地,间接间隙半导体衬底由碳化硅制成。 本发明还涉及用于实现根据本发明的成像方法的装置。
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