-
公开(公告)号：US08006315B2
公开(公告)日：2011-08-23
申请号：US12087103
申请日：2006-12-20
CPC分类号： G01Q60/12
摘要： The present invention relates to an indirect-gap semiconductor substrate, the gap being greater than that of silicon and preferably greater than 1.5 eV, to its use for imaging a specimen by photon-emission scanning tunnel microscopy, and to a photon-emission scanning tunnel imaging method using such an indirect-gap semiconductor substrate. Advantageously, the indirect-gap semiconductor substrate is made of silicon carbide. The present invention also relates to devices for implementing the imaging method according to the invention.
摘要翻译： 本发明涉及一种间接间隙半导体衬底，其间隙大于硅的间隙，优选大于1.5eV，用于通过光子发射扫描隧道显微镜对样品进行成像，以及光子发射扫描隧道 使用这种间接间隙半导体衬底的成像方法。 有利地，间接间隙半导体衬底由碳化硅制成。 本发明还涉及用于实现根据本发明的成像方法的装置。
-
公开(公告)号：US20090300805A1
公开(公告)日：2009-12-03
申请号：US12087103
申请日：2006-12-20
CPC分类号： G01Q60/12
摘要： The present invention relates to an indirect-gap semiconductor substrate, the gap being greater than that of silicon and preferably greater than 1.5 eV, to its use for imaging a specimen by photon-emission scanning tunnel microscopy, and to a photon-emission scanning tunnel imaging method using such an indirect-gap semiconductor substrate. Advantageously, the indirect-gap semiconductor substrate is made of silicon carbide. The present invention also relates to devices for implementing the imaging method according to the invention.
摘要翻译： 本发明涉及一种间接间隙半导体衬底，其间隙大于硅的间隙，优选大于1.5eV，用于通过光子发射扫描隧道显微镜对样品进行成像，以及光子发射扫描隧道 使用这种间接间隙半导体衬底的成像方法。 有利地，间接间隙半导体衬底由碳化硅制成。 本发明还涉及用于实现根据本发明的成像方法的装置。
-
搜索结果
2 条记录 (耗时 0.007 秒)