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    Fabrication method for organic semiconductor transistor having organic polymeric gate insulating layer
    8.
    发明授权
    Fabrication method for organic semiconductor transistor having organic polymeric gate insulating layer 失效
    具有有机聚合物栅极绝缘层的有机半导体晶体管的制造方法

    公开(公告)号：US07071123B2

    公开(公告)日：2006-07-04

    申请号：US10487581

    申请日：2001-08-24

    申请人： Jae Hoon Shim ,  Sung Min Kim ,  Bong Ok Kim ,  No Gil Park ,  Mi Young Kwak ,  Young Kwan Kim

    发明人： Jae Hoon Shim ,  Sung Min Kim ,  Bong Ok Kim ,  No Gil Park ,  Mi Young Kwak ,  Young Kwan Kim

    IPC分类号： H01L21/31

    CPC分类号： H01L51/0516 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0545

    摘要： Provided is a method for fabricating an organic semiconductor transistor having an organic polymeric gate insulating layer. The method includes forming an organic gate insulating layer on a substrate by a vapor deposition method using organic monomer sources, and causing a polymerization reaction to occur in the organic gate insulating layer to complete an organic polymeric gate insulating layer. Since the vapor deposition method, which is a low-temperature dry-type technique, is employed, the organic polymeric gate insulating layer can be uniformly formed on a large-area substrate by a simplified in-situ process.

    摘要翻译： 提供一种制造具有有机聚合物栅极绝缘层的有机半导体晶体管的方法。 该方法包括通过使用有机单体源的气相沉积法在基板上形成有机栅极绝缘层，并且在有机栅极绝缘层中发生聚合反应以完成有机聚合物栅极绝缘层。 由于采用了作为低温干式技术的气相沉积法，有机聚合物栅极绝缘层可以通过简化的原位工艺在大面积基板上均匀地形成。